Heteroepitaxy of Si and Ge on CaF2/Si (111)

1985 ◽  
Vol 54 ◽  
Author(s):  
R. W. Fathauer ◽  
L. J. Schowalter ◽  
N. Lewis ◽  
E. L. Hall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Qualitative Model ◽  
Island Growth ◽  
Island Formation ◽  
Growth Studies ◽  
Si Epitaxy

ABSTRACTSi and Ge layers have been grown on CaF /Si (111) by molecular beam epitaxy (MBE). The use of thin room-tempe rature predeposits [1] with Ge epitaxy has been found to improve the growth. Studies of the initial stages of Ge epitaxy indicate that island growth occurs, and evidence also indicates island formation occurs in the Si case as well. A qualitative model is presented which explains many of the features observed in these systems and suggests reasons for the superior growth of Ge compared to Si. Finally, use of a Ge Si, /Si superlattice is shown to improve Si epitaxy.

GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 Monolayer

1987 ◽  
Vol 94 ◽  
Author(s):  
R. D. Bringans ◽  
M. A. Olmstead ◽  
R. I. G. Uhrberg ◽  
R. Z. Bachrach
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Core Level ◽  
Single Domain ◽  
Island Formation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Si Epitaxy

ABSTRACTCore level spectroscopy measurements have been made on Si substrates with coverages of around one monolayer of As, Ga and GaAs. The interfaces were formed on on-axis Si(100) and Si(111) substrates using molecular beam epitaxy. Results are also presented for an arsenic monolayer on a single-domain Si(100) surface prepared by cutting the crystal off-axis by 4 degrees. The strong bonding between As monolayers and the surface of the substrate causes the GaAs to begin to form islands at average coverages of less than one monolayer. The surface between the islands is found to be terminated by a single atomic layer of As. Use of a Ga predeposition technique shows evidence of reducing the tendancy towards island formation.

Growth studies of (Al,Ga,In)As on InP by molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 755-758 ◽  
Author(s):  
J.-P. Reithmaier ◽  
S. Hausser ◽  
H.P. Meier ◽  
W. Walter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Studies

Growth studies of GaP on Si by gas-source molecular beam epitaxy

1996 ◽  
Vol 164 (1-4) ◽  
pp. 256-262 ◽  
Author(s):  
W.G. Bi ◽  
X.B. Mei ◽  
C.W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Growth Studies

Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy

2004 ◽  
Vol 22 (3) ◽  
pp. 1450 ◽  
Author(s):  
Xiaojun Yu ◽  
Paulina S. Kuo ◽  
Kai Ma ◽  
Ofer Levi ◽  
Martin M. Fejer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase ◽  
Phase Growth ◽  
Growth Studies

Systematic growth studies of narrow constrictions formed by molecular beam epitaxy on prepatterned substrates

2000 ◽  
Vol 74 (1-3) ◽  
pp. 25-31 ◽  
Author(s):  
M. Lipinski ◽  
H. Schuler ◽  
P. Veit ◽  
R. Clos ◽  
K. Eberl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Studies

Ge Nanocrystals Grown on Si(111) by Molecular Beam Epitaxy with and without CaF2 Buffer Layers

1994 ◽  
Vol 358 ◽  
Author(s):  
Peter W. Deelman ◽  
Thomas Thundat ◽  
Leo J. Schowalter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Ex Situ ◽  
Rheed Pattern ◽  
Island Growth ◽  
Clustering Behavior ◽  
Ge Nanocrystals

ABSTRACTThe Stranski-Krastanov growth mode of Ge thin films on Si and the clustering behavior of Ge on calcium fluoride have been exploited to grow self-assembled nanocrystals by molecular beam epitaxy. The growth of the samples was monitored in situ with RHEED, and they were analyzed ex situ with AFM and RBS. For each system (Ge/Si and Ge/CaF2/Si), the dependence of Ge islanding on substrate temperature and on substrate misorientation was studied. When grown on Si(111) at temperatures between 500°C and 700°C, Ge clusters nucleated at step edges on vicinal wafers and nucleated homogeneously on on-axis wafers. Above 600°C, no transition to a spotty RHEED pattern, which would be expected for island growth, was observed for the vicinal samples. Ge grown at 500°C on on-axis Si(111) formed islands with a relatively narrow size distribution, typically 160nm in diameter and 10nm to 20nm in height. When grown on a CaF2 buffer layer, Ge islands nucleated homogeneously at a substrate temperature of 750°C, resulting in randomly distributed, oblate crystallites approximately 100nm to 200nm in diameter. At 650°C and 700°C, although we still observed many randomly distributed, small crystallites, most islands nucleated at step bunches and had a length scale of over 500nm.

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