Control of GaAs Domain Formation Via Monolayer and Multilayer Steps on Misoriented Si(100)

1987 ◽  
Vol 91 ◽  
Author(s):  
P.R. Pukite ◽  
P.I. Cohen
Keyword(s):  
Electron Diffraction ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Energy ◽  
Nucleation And Growth ◽  
Single Domain ◽  
Domain Formation ◽  
High Energy Electron ◽  
Strong Function ◽  
Step Transition

ABSTRACTReflection high energy electron diffraction (RHEED) measurements indicate that the adsorption of As on misoriented Si(100) surfaces drives a multilayer step transition. We find that the formation of multilayer steps is a strong function of substrate temperature and As pressure. Monolayer steps are metastable at low substrate temperature or As pressure. The subsequent nucleation and growth of GaAs by molecular beam epitaxy (MBE) is controlled by the initial Si step distribution. Single domain GaAs grown on the monolayer stepped substrate has Ga terminated steps. Conversely, single domain GaAs grown on the multilayer stepped substrate has As terminated steps.

Growth Rate Reduction of GaN Due to Ga Surface Accumulation

1996 ◽  
Vol 1 ◽  
Author(s):  
D.E. Crawford ◽  
R. Held ◽  
A. M. Johnston ◽  
A. M. Dabiran ◽  
Philip I. Cohen
Keyword(s):  
Growth Rate ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Formation Rate ◽  
High Energy ◽  
High Energy Electron ◽  
Rate Reduction ◽  
Excess Surface ◽  
The Relationship

GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

Sign in / Sign up

Export Citation Format

Share Document