Admittance Measurements at Epitaxial and Nonepitaxial Silicide Schottky Contacts

1987 ◽  
Vol 91 ◽  
Author(s):  
J. Werner ◽  
R. T. Tung ◽  
A. F. J. Levi ◽  
M. Anzlowar
Keyword(s):  
Contact Resistance ◽  
Series Resistance ◽  
Schottky Contact ◽  
Low Frequency ◽  
Interface States ◽  
Extensive Study ◽  
Schottky Contacts ◽  
Imaginary Component ◽  
Minority Carriers

ABSTRACTWe report results of an extensive study examining the usefulness of low frequency capacitance measurements for the characterization of interface states at intimate Schottky contacts. Our measurements on epitaxial as well as on nonepitaxial silicides reveal that the imaginary component of the low frequency ac-admittance is usually inductive. This inductance is caused by minority carriers that are injected by the Schottky contact and modulate the conductivity of the series resistance of the bulk silicon. The frequently reported excess capacitances (instead of inductances) that were ascribed to interface states are only reproducible when we use imperfect back-contacts to the bulk Si that add a contact resistance to the equivalent dc-circuit of the Schottky diode. Excess low frequency capacitances at intimate Schottky contacts are therefore not related to interface states but rather to the contact resistance of the back-contact.

Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States

2017 ◽  
Vol 897 ◽  
pp. 139-142 ◽  
Author(s):  
Alexander Savtchouk ◽  
Marshall Wilson ◽  
Jacek Lagowski
Keyword(s):  
Thermal Emission ◽  
Interface State ◽  
Interface States ◽  
Time Resolved ◽  
Uv Illumination ◽  
Dielectric Interfaces ◽  
Charging Current ◽  
The Cost ◽  
Minority Carriers

In this work we present novel photo-assisted characterization of dielectric interfaces in SiC using a modified non-contact corona-Kelvin technique. This technique eliminates the cost and time associated with fabrication of electrical test structures. UV illumination in deep depletion is used to generate minority carriers that empty deep interface states too slow to be emptied by thermal emission. After illumination, the interface state charging current is measured with time resolved voltage decay. This enables novel non-contact corona-Kelvin characterization of hole emission and electron capture processes involving slow interface states. This novel application complements standard corona-Kelvin measurement of dielectric, interface and semiconductor parameters.

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

2003 ◽  
Vol 784 ◽  
Author(s):  
P. Victor ◽  
S. Saha ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Deep Level ◽  
Low Frequency ◽  
Interface States ◽  
Excimer Laser Ablation ◽  
Inversion Region ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type ◽  
Minority Carriers

ABSTRACTBaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

Effect of RF Power on the Characteristic Parameters of W/n-GaAs Schottky Contacts Fabricated by RF Sputtering

1995 ◽  
Vol 378 ◽  
Author(s):  
A. Singh ◽  
G. Aroca ◽  
L. Velásquez
Keyword(s):  
Surface Defects ◽  
Defect Density ◽  
Forward Bias ◽  
Schottky Contact ◽  
Rf Sputtering ◽  
Low Frequency ◽  
Schottky Contacts ◽  
Rf Power ◽  
Order Of Magnitude ◽  
Density Surface

AbstractW/n-GaAs/In Schottky contacts of area 1.75 mm2 were fabricated by deposition of W on (100) n-GaAs by rf Sputtering using rf power values in the range 200–400 Watt. The I-V and high frequency C-V measurements at 300 K, in the 200 Watt W/n-GaAs Schottky contact indicated that W formed a good rectifying contact to n-GaAs, with a rectification ratio (r) of 270, ideality factor (n) of 1.39, reverse saturation current (Io) of 1.2×10−6 A and the C-V barrier height (φbo) of 1.6 V. However, n and Io increased, whereas r and φbo decreased for the W/n-GaAs Schottky contacts prepared using higher rf power. For the 300 Watt W/n-GaAs contact, the values of 70, 1.70, 6.3}10−6 A, and 1.2V for r, n, Io and φbo, respectively, were estimated. The low frequency forward bias capacitance (or surface defect density) was an order of magnitude higher in the 300 Watt contact than in the 200 Watt contact. This fact suggested that the degradation in the quality of W/n-GaAs Schottky contacts fabricated by using high rf power was caused by high density surface defects created during sputter deposition of W on n-GaAs.

Electrical characterization of two analogous Schottky contacts produced from N-substituted 1,8-naphthalimide

2018 ◽  
Vol 20 (48) ◽  
pp. 30502-30513 ◽  
Author(s):  
Emine Karagöz ◽  
Songül Fiat Varol ◽  
Serkan Sayın ◽  
Ziya Merdan
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Interface States ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs).

scholarly journals Ferromagnetic Schottky Contact for GaN Based Spin Devices

2021 ◽  
Vol 12 ◽  
pp. 55-60
Author(s):  
Tarkeshwar C. Patil
Keyword(s):  
Barrier Height ◽  
Spin Injection ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Zero Bias ◽  
Spin Devices

In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices

Electroluminescence from 4H-SiC Schottky Diodes

2000 ◽  
Vol 640 ◽  
Author(s):  
F. H. C. Carlsson ◽  
Q. ul-Wahab ◽  
J. P. Bergman ◽  
E. Janzén
Keyword(s):  
Room Temperature ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Schottky Contact ◽  
Spectral Composition ◽  
Defect Characterization ◽  
Nitrogen Doped ◽  
Band Edge Luminescence ◽  
Minority Carriers

ABSTRACTWe have observed electroluminescence from 4H-SiC Ni-Schottky diodes on 1015cm−3 nitrogen doped n-type epilayers. A high barrier Schottky contact will form an inversion layer close to it. This creates minority carriers that can be injected into the epi and recombine to emit light. The spectral composition and its temperature dependence have been investigated from liquid He temperatures to room temperature. Band edge luminescence, Al related luminescence and DI bound exciton have been observed. To study the electroluminescence from Schottky diodes provides an easy and additional technique for defect characterization of epitaxial layers.

Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 444-447 ◽  
Author(s):  
Vinoth Kumar Sundaramoorthy ◽  
Yu Lun Song ◽  
Renato Amaral Minamisawa
Keyword(s):  
Contact Resistance ◽  
Doping Concentration ◽  
Metal Layer ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Specific Contact

The analysis of Ti/Ni metal-layer as Ohmic and Schottky contacts to 4H n-SiC (with a doping concentration of ~1E18 cm-3) is reported. Both Ti (10nm/Ni (100nm) contact and Ti (20nm)/Ni (100nm) contact were found to have Ohmic behavior with comparable specific contact resistance (~4.3 to 5.3×10-4 Ωcm2) after annealing at 1100 °C. Ti (10nm)/Ni (100nm) contact annealed at 500 °C and 600 °C was also demonstrated as Schottky contact to 4H n-SiC layers.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Sign in / Sign up

Export Citation Format

Share Document