Characterization of plasma etching induced interface states at Ti∕p-SiGe Schottky contacts

2008 ◽  
Vol 26 (4) ◽  
pp. 705-709 ◽  
Author(s):  
M. Mamor ◽  
A. Sellai
Keyword(s):  
Plasma Etching ◽  
Interface States ◽  
Schottky Contacts

Admittance Measurements at Epitaxial and Nonepitaxial Silicide Schottky Contacts

1987 ◽  
Vol 91 ◽  
Author(s):  
J. Werner ◽  
R. T. Tung ◽  
A. F. J. Levi ◽  
M. Anzlowar
Keyword(s):  
Contact Resistance ◽  
Series Resistance ◽  
Schottky Contact ◽  
Low Frequency ◽  
Interface States ◽  
Extensive Study ◽  
Schottky Contacts ◽  
Imaginary Component ◽  
Minority Carriers

ABSTRACTWe report results of an extensive study examining the usefulness of low frequency capacitance measurements for the characterization of interface states at intimate Schottky contacts. Our measurements on epitaxial as well as on nonepitaxial silicides reveal that the imaginary component of the low frequency ac-admittance is usually inductive. This inductance is caused by minority carriers that are injected by the Schottky contact and modulate the conductivity of the series resistance of the bulk silicon. The frequently reported excess capacitances (instead of inductances) that were ascribed to interface states are only reproducible when we use imperfect back-contacts to the bulk Si that add a contact resistance to the equivalent dc-circuit of the Schottky diode. Excess low frequency capacitances at intimate Schottky contacts are therefore not related to interface states but rather to the contact resistance of the back-contact.

Electrical characterization of two analogous Schottky contacts produced from N-substituted 1,8-naphthalimide

2018 ◽  
Vol 20 (48) ◽  
pp. 30502-30513 ◽  
Author(s):  
Emine Karagöz ◽  
Songül Fiat Varol ◽  
Serkan Sayın ◽  
Ziya Merdan
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Interface States ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs).

scholarly journals Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

2020 ◽  
pp. 1-6
Author(s):  
Matthias L. Vermeer ◽  
Raymond J. E. Hueting ◽  
Luca Pirro ◽  
Jan Hoentschel ◽  
Jurriaan Schmitz
Keyword(s):  
Interface States ◽  
Subthreshold Current

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma

Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts

2006 ◽  
Vol 89 (24) ◽  
pp. 242117 ◽  
Author(s):  
H. B. Yao ◽  
D. Z. Chi ◽  
R. Li ◽  
S. J. Lee ◽  
D.-L. Kwong
Keyword(s):  
Inversion Layer ◽  
Electrical Characterization ◽  
Schottky Contacts
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