Electrical characterization of two analogous Schottky contacts produced from N-substituted 1,8-naphthalimide
2018 ◽
Vol 20
(48)
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pp. 30502-30513
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Keyword(s):
The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs).
2016 ◽
Vol 3
(5)
◽
pp. 1255-1261
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2015 ◽
Vol 140
◽
pp. 18-22
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2013 ◽
Vol 13
(6)
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pp. 1137-1142
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1989 ◽
pp. 235-256
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2016 ◽
Vol 45
(8)
◽
pp. 4177-4182
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Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature
2014 ◽
Vol 28
◽
pp. 127-134
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