Optoelectronic Properties of Pseudomorphic SixGel1−x,/Ge Heterostructures on (001) Ge

1987 ◽  
Vol 91 ◽  
Author(s):  
R. People
Keyword(s):  
Electronic Properties ◽  
Valence Band ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optical Transition ◽  
Optoelectronic Properties ◽  
Transition Energies ◽  
Optical And Electronic Properties ◽  
Potential Applications ◽  
Band Alignments

ABSTRACTThe optical and electronic properties of pseudomorphic SixGel1−x/Ge heterostructures are reviewed in brief. Potential applications of conduction and valence band alignments for modulation doped field effect transistors are outlined. Optical transition energies are calculated for ultra-thin, alternating four monolayer, Si/Ge heterostructures on (001) Ge.

Effect of N-Substituents on Redox, Optical, and Electronic Properties of Naphthalene Bisimides Used for Field-Effect Transistors Fabrication

2010 ◽  
Vol 114 (5) ◽  
pp. 1803-1809 ◽  
Author(s):  
Pawel Gawrys ◽  
David Djurado ◽  
Ján Rimarčík ◽  
Aleksandra Kornet ◽  
Damien Boudinet ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optical And Electronic Properties

The optical and electronic properties of semiconducting diamond

1993 ◽  
Vol 342 (1664) ◽  
pp. 233-244 ◽  
Keyword(s):  
Absorption Spectrum ◽  
Electronic Properties ◽  
Valence Band ◽  
Chemical Vapour ◽  
Impurity Band ◽  
Thermally Activated ◽  
Boron Doped ◽  
Optical And Electronic Properties ◽  
Temperature Dependences ◽  
Semiconducting Diamond

In this paper I review the evidence that shows that the optical and electronic properties of semiconducting diamond can be understood in terms of boron acceptors partially compensated by deep donors. In natural semiconducting diamond, in which the total impurity concentration is less than 1 ppm, there is a lot of fine structure in the acceptor absorption spectrum that is not fully understood, and the electrical conductivity is primarily associated with the thermally activated excitation of holes from the acceptor ground state to the valence band. Some of the problems regarding the analysis of Hall effect data in this material are discussed, including the temperature dependences of the scattering mechanisms, of the contribution from the split-off valence band and of the population of excited states. There are no adequate theoretical descriptions of any of these processes, and this leads to some uncertainties in the values of the parameters derived from the temperature dependence of the Hall coefficient. For boron-doped synthetic diamond, and thin film diamond grown by chemical vapour deposition (CVD), the defect concentrations are generally much higher, and much more inhomogeneous, than in natural semiconducting diamond. This results in a substantial broadening of the acceptor absorption spectrum and the electronic properties are greatly modified by increasing contributions from impurity band conduction as the acceptor concentrations are increased, leading to very low mobility values. For both poly crystalline and single crystal homoepitaxial CVD diamond, measurements of the electrical properties can be completely invalidated by the presence of a surface layer of non-diamond carbon.

Polypyrrole derivatives for optoelectronic applications: a DFT study on the influence of side groups

2019 ◽  
Vol 21 (32) ◽  
pp. 17729-17739 ◽  
Author(s):  
Alex Pifer Coleone ◽  
Leonardo Gois Lascane ◽  
Augusto Batagin-Neto
Keyword(s):  
Dft Calculations ◽  
Electronic Properties ◽  
Optoelectronic Properties ◽  
Dft Study ◽  
Optical And Electronic Properties ◽  
Optoelectronic Applications

DFT calculations were used to evaluate the effect of side groups on the structural, optical and electronic properties of 3-substituted PPy derivatives. Simple relationships between the optoelectronic properties and Hammet parameters are proposed.

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

Themed issue on “Organic field-effect transistors: interfacial phenomena and electronic properties”

2015 ◽  
Vol 17 (40) ◽  
pp. 26509-26511 ◽  
Author(s):  
K. Krishnamoorthy ◽  
Antonio F. Facchetti ◽  
Wenping Hu ◽  
Zhenan Bao
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interfacial Phenomena ◽  
Organic Field Effect Transistors

This themed issue presents a collection of articles on organic field-effect transistors: interfacial phenomena and electronic properties.

Stabilization of ZnS nanoparticles by polymeric matrices: syntheses, optical properties and recent applications

RSC Advances ◽  
2016 ◽  
Vol 6 (69) ◽  
pp. 64400-64420 ◽  
Author(s):  
Ashish Tiwari ◽  
S. J. Dhoble
Keyword(s):  
Optical Properties ◽  
Electronic Properties ◽  
Hybrid Materials ◽  
Optical Studies ◽  
Zns Nanoparticles ◽  
Polymeric Matrices ◽  
Optical And Electronic Properties ◽  
Potential Applications ◽  
Promising Area

ZnS nanocomposites is a promising area of research for designing novel functional hybrid materials due to their unique optical and electronic properties. This review emphasizes on the synthesis, optical studies and potential applications.

Low-power tunnel field effect transistors using mixed As and Sb based heterostructures

2013 ◽  
Vol 2 (6) ◽  
pp. 637-678 ◽  
Author(s):  
Yan Zhu ◽  
Mantu K. Hudait
Keyword(s):  
Low Power ◽  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Band Alignment ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Material System ◽  
Wide Range ◽  
Band Alignments

AbstractReducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal oxide semiconductor field effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage without degrading ON/OFF ratio in current integrated circuits. Tunnel field-effect transistors (TFETs) benefit from steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs. TFETs based on group III-V compound semiconductor materials further improve the ON-state current and reduce SS due to the low band gap energies and smaller carrier tunneling mass. The mixed arsenide/antimonide (As/Sb) InxGa1-xAs/GaAsySb1-y heterostructures allow a wide range of band gap energies and various staggered band alignments depending on the alloy compositions in the source and channel materials. Band alignments at source/channel heterointerface can be well modulated by carefully controlling the compositions of the mixed As/Sb material system. In particular, this review introduces and summarizes the progress in the development and optimization of low-power TFETs using mixed As/Sb based heterostructures including basic working principles, design considerations, material growth, interface engineering, material characterization, device fabrication, device performance investigation, band alignment determination, and high temperature reliability. A review of TFETs using mixed As/Sb based heterostructures shows superior structural properties and distinguished device performance, both of which indicate the mixed As/Sb staggered gap TFET as a promising option for high-performance, low-standby power, and energy-efficient logic circuit application.

Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

2008 ◽  
Vol 92 (23) ◽  
pp. 233120 ◽  
Author(s):  
Jongsun Maeng ◽  
Gunho Jo ◽  
Soon-Shin Kwon ◽  
Sunghoon Song ◽  
Jaeduck Seo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sweep Rate ◽  
Gate Bias ◽  
Zno Nanowire

Recent progress on organic donor–acceptor complexes as active elements in organic field-effect transistors

2018 ◽  
Vol 6 (14) ◽  
pp. 3485-3498 ◽  
Author(s):  
Jing Zhang ◽  
Jianqun Jin ◽  
Haixiao Xu ◽  
Qichun Zhang ◽  
Wei Huang
Keyword(s):  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Active Elements ◽  
Potential Applications ◽  
Donor Acceptor

The recent progress on the methods to prepare donor (D)–acceptor (A) co-crystals and their potential applications in OFETs has been reviewed.

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