Effect of N-Substituents on Redox, Optical, and Electronic Properties of Naphthalene Bisimides Used for Field-Effect Transistors Fabrication

2010 ◽  
Vol 114 (5) ◽  
pp. 1803-1809 ◽  
Author(s):  
Pawel Gawrys ◽  
David Djurado ◽  
Ján Rimarčík ◽  
Aleksandra Kornet ◽  
Damien Boudinet ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optical And Electronic Properties

Optoelectronic Properties of Pseudomorphic SixGel1−x,/Ge Heterostructures on (001) Ge

1987 ◽  
Vol 91 ◽  
Author(s):  
R. People
Keyword(s):  
Electronic Properties ◽  
Valence Band ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optical Transition ◽  
Optoelectronic Properties ◽  
Transition Energies ◽  
Optical And Electronic Properties ◽  
Potential Applications ◽  
Band Alignments

ABSTRACTThe optical and electronic properties of pseudomorphic SixGel1−x/Ge heterostructures are reviewed in brief. Potential applications of conduction and valence band alignments for modulation doped field effect transistors are outlined. Optical transition energies are calculated for ultra-thin, alternating four monolayer, Si/Ge heterostructures on (001) Ge.

Themed issue on “Organic field-effect transistors: interfacial phenomena and electronic properties”

2015 ◽  
Vol 17 (40) ◽  
pp. 26509-26511 ◽  
Author(s):  
K. Krishnamoorthy ◽  
Antonio F. Facchetti ◽  
Wenping Hu ◽  
Zhenan Bao
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interfacial Phenomena ◽  
Organic Field Effect Transistors

This themed issue presents a collection of articles on organic field-effect transistors: interfacial phenomena and electronic properties.

Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

2008 ◽  
Vol 92 (23) ◽  
pp. 233120 ◽  
Author(s):  
Jongsun Maeng ◽  
Gunho Jo ◽  
Soon-Shin Kwon ◽  
Sunghoon Song ◽  
Jaeduck Seo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sweep Rate ◽  
Gate Bias ◽  
Zno Nanowire

Electronic Properties and Field-Effect Transistors of Oligomers End-Capped with Benzofuran Moieties

ChemPlusChem ◽  
2013 ◽  
Vol 78 (5) ◽  
pp. 459-466 ◽  
Author(s):  
Charlotte Mallet ◽  
Yahia Didane ◽  
Takeshi Watanabe ◽  
Noriyuki Yoshimoto ◽  
Magali Allain ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors

Electronic Properties and Field-Effect Transistors of Thiophene-Based Donor-Acceptor Conjugated Copolymers

2005 ◽  
Vol 26 (23) ◽  
pp. 1835-1840 ◽  
Author(s):  
Richard D. Champion ◽  
Kai-Fang Cheng ◽  
Chia-Ling Pai ◽  
Wen-Chang Chen ◽  
Samson A. Jenekhe
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Donor Acceptor ◽  
Conjugated Copolymers

Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization

2015 ◽  
Vol 26 (9) ◽  
pp. 095202 ◽  
Author(s):  
Cheng Han ◽  
Du Xiang ◽  
Minrui Zheng ◽  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Functionalization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire

Self-Assembled Pyrene Stacks and Peptide Monolayers Tune the Electronic Properties of Functionalized Electrolyte-Gated Graphene Field-Effect Transistors

2021 ◽  
Vol 13 (7) ◽  
pp. 9134-9142
Author(s):  
Kishan Thodkar ◽  
Pierre-Andre Cazade ◽  
Frank Bergmann ◽  
Eloisa Lopez-Calle ◽  
Damien Thompson ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Self Assembled

Pyroelectric Effect Mediated Infrared Photoresponse in Bi2Te3/Pb(Mg1/3Nb2/3)O3-PbTiO3 Optothermal Ferroelectric Field-Effect Transistors

Nanoscale ◽  
2021 ◽  
Author(s):  
R. Zheng ◽  
Ming-Yuan Yan ◽  
C. Li ◽  
S.Q. Yin ◽  
W.D. Chen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Field Stimulation ◽  
Thermal Modulation ◽  
Pyroelectric Effect ◽  
Materials Properties ◽  
New Type

The responses of materials properties to multi-field stimulation are often exploited to construct new type multi-functional devices. Here, we demonstrate electric-optical-thermal modulation of the electronic properties of optothermal ferroelectric field-effect...

Control of Electronic Properties of Organic Semiconductor

2011 ◽  
Vol 287-290 ◽  
pp. 725-728
Author(s):  
Ke Jie Tan ◽  
Ke Ke Zhang ◽  
Shu Qin Liang ◽  
Wai Hoong Kan ◽  
Subodh G Mhaisalkar ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electronic Properties ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
High Efficient

The electronic properties of organic field effect transistors limit the efficiency of integrated circuits build on basis of printed organic semiconductors. In order to control the mobility of high efficient semiconductors, like rubrene, tetracene, tetracyanoquinodimethane (TCNQ), copper phthalocyanine and many others, single-crystal field-effect transistors have been prepared on surfaces of single crystals and characteristics have been measured. The highest mobility has been measured on rubrene single crystals. The mobility of as-grown crystals measured by air-gap field effect transistor is in the range of 10 cm2/Vs but falls below 1 cm2/Vs during reduction. It was observed that the measured mobility depends on the dielectric used for field effect transistors.

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