Liquid-Phase Epitaxy of Hg1−xCdxTe from Hg Solution: A Route to Infrared Detector Structures

1986 ◽  
Vol 90 ◽  
Author(s):  
Tse Tung ◽  
M. H. Kalisher ◽  
A. P. Stevens ◽  
P. E. Herning
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Infrared Detector ◽  
Minority Carrier Lifetime ◽  
Current Status ◽  
Critical Material ◽  
Device Structures ◽  
Impurity Doping ◽  
Laser Detector ◽  
Frequency Laser

ABSTRACTOver the past few years, liquid-phase epitaxy (LPE) has become an established growth technique for the synthesis of HgCdTe. This paper reviews one of the most successful LPE technologies developed for HgCdTe, specifically, “infinite-melt” vertical LPE (VLPE) from Hg-rich solutions.Despite the very high Hg vapor pressure (> 10 atm) and the extremely low solubility of Cd in the Hg solution (< 10−3 mol%), this approach was believed to offer the best long-term prospect for growth of HgCdTe suitable for various device structures. Since the initial demonstration of LPE growth of HgCdTe layers from Hg solution in experiments conducted at SBRC in 1978, the VLPE technology has advanced to the point where epitaxial HgCdTe can now be grown for photoconductive (PC) and photovoltaic (PV) as well as monolithic metal-insulator-semiconductor (MIS) and high-frequency laser-detector devices with state-of-the-art performance in the entire 2–12 μm spectral region.A historical perspective and the current status of VLPE technology are reported. Particular emphasis is placed on the important role of the ther-modynamic parameters (phase diagram) and on control of stoichiometry (defect chemistry) and impurity doping (distribution coefficient) for growth of HgCdTe layers from Hg solution. Critical material characteristics, such as transport properties, minority-carrier lifetime, morphology and crystal structure, are also discussed. Finally, a comparison with the LPE technol-ogy using Te solutions, which has been the mainstay of the remainder of the IR community, is presented.

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

2004 ◽  
Vol 48 (12) ◽  
pp. 2251-2254 ◽  
Author(s):  
Jun-ichi Nishizawa ◽  
Akihiko Murai ◽  
Hiroki Makabe ◽  
Osamu Ito ◽  
Tomoyuki Kimura ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Tunnel Junction ◽  
Liquid Phase Epitaxy ◽  
V Band ◽  
Impurity Doping

Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent

2005 ◽  
Vol 98 (7) ◽  
pp. 073708 ◽  
Author(s):  
Yusuke Satoh ◽  
Noritaka Usami ◽  
Wugen Pan ◽  
Kozo Fujiwara ◽  
Kazuo Nakajima ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy

2006 ◽  
Vol 35 (6) ◽  
pp. 1192-1196 ◽  
Author(s):  
Changzhen Wang ◽  
Steve Tobin ◽  
Themis Parodos ◽  
David J. Smith
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Device Structures

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

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