Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent

2005 ◽  
Vol 98 (7) ◽  
pp. 073708 ◽  
Author(s):  
Yusuke Satoh ◽  
Noritaka Usami ◽  
Wugen Pan ◽  
Kozo Fujiwara ◽  
Kazuo Nakajima ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 112-115 ◽  
Author(s):  
Jürgen Erlekampf ◽  
Daniel Kaminzky ◽  
Katharina Rosshirt ◽  
Birgit Kallinger ◽  
Mathias Rommel ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Growth Parameters ◽  
Formation Enthalpy ◽  
Minority Carrier Lifetime ◽  
Process Conditions ◽  
Recombination Mechanism ◽  
High Carrier

The development of bipolar 4H-SiC devices for high blocking voltages requires the growth of high carrier lifetime epitaxial layers with low Z1/2 concentrations. This paper shows a comprehensive investigation of the influence of epitaxial growth parameters (C/Si ratio and growth temperature) on Z1/2 concentration and minority carrier lifetime. On the basis of a discovered exponential correlation of Z1/2 with the C/Si ratio and growth temperature, a competitive low Z1/2 concentration of 1.9∙1012 cm-3 could be achieved by lowering the growth temperature and switching to higher C/Si ratio. Thermodynamic considerations by an Arrhenius approach reveal a dependency of the formation enthalpy of Z1/2 on the thermal process and process conditions of the epitaxial growth. Furthermore, the correlation between Z1/2 and the effective minority carrier lifetime confirms the occurrence of a necessary second recombination mechanism beside the common recombination at deep levels by Shockley-Read-Hall for low Z1/2 concentration.

On the Auger Recombination Process in P-Type Lpe HgCdTe

1986 ◽  
Vol 90 ◽  
Author(s):  
J. S. Chen ◽  
J. Bajaj ◽  
W. E. Tennant ◽  
D. S. Lo ◽  
M. Brown ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Auger Recombination ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recombination Process ◽  
Layer Model ◽  
Lifetime Measurements ◽  
Double Layer Model ◽  
P Type

ABSTRACTMinority carrier lifetime measurements at 77K were carried out in ptype liquid phase epitaxial (LPE) Hg 1-xCdx Te/CdTe (x = 0.22) using the photoconductive decay technique. Lifetimes of 20 to 7000 ns were obtained in samples with hole concentrations, p, in the range 1014 to 1016 cm-3. The hole concentrations were determineg by analyzing the Hall data using a double-layer model. It was found that the minority carrier lifetime is inversely proportional to p01.86. This result demonstrates that the Auger mechanism may be the dominant recombination process in p-type LPE Hg0.78 Cd0.22Te/CdTe. The temperature dependence of minority carrier lifetime was also measured between 10 and 200K for several samples.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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