Identification and Sources of Impurities in InGaAs Grown by Liquid Phase Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
D. G. Knight ◽  
C. J. Miner ◽  
A. Majeed
Keyword(s):  
High Temperature ◽  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Photoluminescence Spectra ◽  
Donor And Acceptor ◽  
Sulfur Containing ◽  
Sulfur Containing Compounds ◽  
Low Temperature Photoluminescence

ABSTRACTHigh purity In.53 Ga.47 As and InP with carrier concentrations [ND–NA] < 5×1015 cm−3 has been grown by the LPE technique on both n-type and semi-insulating substrates to detect and identify trace donor and acceptor impurities. Acceptor impurities have been detected in low temperature photoluminescence spectra where LPE melt baking and growth programs indicate a melt origin for two of these species, one of which is zinc. Data from semiconductor profiles provides evidence for sulfur and tin donor impurities, which comes from the rinse melt used to etch back substrates doped with the respective contaminants. Silicon and sulfur contaminants have been detected by SIMS measurements; and may arise not only from the indium and III-V materials, but also the graphite boat used to grow the epilayers. Volatile sulfur-containing compounds have been detected during high temperature bake-out of high purity graphite boats.

Low temperature photoluminescence ofn‐type GaInAsP layers grown on InP by liquid phase epitaxy

1983 ◽  
Vol 54 (9) ◽  
pp. 5363-5368 ◽  
Author(s):  
B. Beaumont ◽  
G. Nataf ◽  
J. C. Guillaume ◽  
C. Vèrié
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Low Temperature Photoluminescence

PHOTOLUMINESCENCE STUDIES OF GaInArSb HIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1645-1649
Author(s):  
J. DÍAZ-REYES ◽  
E. CORONA-ORGANICHE ◽  
J. L. HERRERA-PÉREZ ◽  
O. ZARATE-CORONA ◽  
J. MENDOZA-ALVAREZ
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Electron Concentration ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
Pl Spectra ◽  
Photoluminescence Studies ◽  
Neutral Acceptor ◽  
Dominant Peak ◽  
Low Temperature Photoluminescence

Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 – 2 × 1020 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2, disappears.

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

2008 ◽  
Vol 600-603 ◽  
pp. 389-392
Author(s):  
N.Y. Garces ◽  
E.R. Glaser ◽  
W.E. Carlos ◽  
Mark A. Fanton
Keyword(s):  
Electron Paramagnetic Resonance ◽  
High Temperature ◽  
Low Temperature ◽  
High Purity ◽  
Paramagnetic Resonance ◽  
Native Defects ◽  
Carrier Lifetimes ◽  
High Temperature Anneal ◽  
Electron Paramagnetic ◽  
Low Temperature Photoluminescence

We have recently explored the nature and stability of native defects in high-purity semi-insulating 4H-SiC bulk substrates grown by PVT and HTCVD methods after post-growth anneal treatments up to 2400oC using electron paramagnetic resonance (EPR) and low-temperature photoluminescence (PL) experiments. In the present study we have extended these investigations to SI 4H-SiC subjected to the same post-growth high-temperature anneal treatments, where significantly enhanced carrier lifetimes have been reported for such conditions, but cooled at different rates ranging from ~2-25oC/min. Previously, the intensities of the native defects decreased monotonically with anneals from 1200–1800oC; however, it was recently observed that several of these defects reappear after annealing at 2100oC and above. Our results illustrate the effects of the post-growth anneal treatments and cool-down rates on the concentrations of native defects.

Very high purity InP layer grown by liquid‐phase epitaxy using erbium gettering

1993 ◽  
Vol 73 (1) ◽  
pp. 468-470 ◽  
Author(s):  
Meng‐Chyi Wu ◽  
Cheng‐Ming Chiu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Very High

Low-temperature liquid-phase epitaxy of YBa2Cu3Oyfilms by the molten KOH method

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ13 ◽  
Author(s):  
Shuhei Funaki ◽  
Yasuji Yamada ◽  
Ryota Okunishi ◽  
Yugo Miyachi
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Liquid

High Purity GaAs Crystals Grown by Liquid Phase Epitaxy

1971 ◽  
Vol 10 (6) ◽  
pp. 820C-820C
Author(s):  
Hidejiro Miki ◽  
Mutsuyuki Otsubo
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity
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