Very high purity InP layer grown by liquid‐phase epitaxy using erbium gettering

1993 ◽  
Vol 73 (1) ◽  
pp. 468-470 ◽  
Author(s):  
Meng‐Chyi Wu ◽  
Cheng‐Ming Chiu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Very High

High Purity GaAs Crystals Grown by Liquid Phase Epitaxy

1971 ◽  
Vol 10 (6) ◽  
pp. 820C-820C
Author(s):  
Hidejiro Miki ◽  
Mutsuyuki Otsubo
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity

High-purity In0.53Ga0.47As layer grown by liquid phase epitaxy

1988 ◽  
Vol 89 (4) ◽  
pp. 391-394 ◽  
Author(s):  
K. Ohtsuka ◽  
T. Ohishi ◽  
Y. Abe ◽  
H. Sugimoto ◽  
T. Matsui ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity

scholarly journals Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

1993 ◽  
Vol 46 (2) ◽  
pp. 317 ◽  
Author(s):  
KSA Butcher ◽  
D Alexiev ◽  
TL Tansley
Keyword(s):  
Electron Beam ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Minority Carrier ◽  
Induced Current ◽  
Carrier Diffusion ◽  
Nuclear Science ◽  
Electron Beam Induced Current ◽  
P Type

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

High purity InP and InGaAsP grown by liquid phase epitaxy

1982 ◽  
Vol 56 (2) ◽  
pp. 475-484 ◽  
Author(s):  
L.W. Cook ◽  
M.M. Tashima ◽  
N. Tabatabaie ◽  
T.S. Low ◽  
G.E. Stillman
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity

Identification and Sources of Impurities in InGaAs Grown by Liquid Phase Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
D. G. Knight ◽  
C. J. Miner ◽  
A. Majeed
Keyword(s):  
High Temperature ◽  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Photoluminescence Spectra ◽  
Donor And Acceptor ◽  
Sulfur Containing ◽  
Sulfur Containing Compounds ◽  
Low Temperature Photoluminescence

ABSTRACTHigh purity In.53 Ga.47 As and InP with carrier concentrations [ND–NA] < 5×1015 cm−3 has been grown by the LPE technique on both n-type and semi-insulating substrates to detect and identify trace donor and acceptor impurities. Acceptor impurities have been detected in low temperature photoluminescence spectra where LPE melt baking and growth programs indicate a melt origin for two of these species, one of which is zinc. Data from semiconductor profiles provides evidence for sulfur and tin donor impurities, which comes from the rinse melt used to etch back substrates doped with the respective contaminants. Silicon and sulfur contaminants have been detected by SIMS measurements; and may arise not only from the indium and III-V materials, but also the graphite boat used to grow the epilayers. Volatile sulfur-containing compounds have been detected during high temperature bake-out of high purity graphite boats.

High Purity GaAs Crystals Grown by Liquid Phase Epitaxy

1971 ◽  
Vol 10 (4) ◽  
pp. 509-509 ◽  
Author(s):  
Hidejiro Miki ◽  
Mutsuyuki Otsubo
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity

High‐purity ZnSe grown by liquid phase epitaxy

1981 ◽  
Vol 38 (7) ◽  
pp. 540-542 ◽  
Author(s):  
C. Werkhoven ◽  
B. J. Fitzpatrick ◽  
S. P. Herko ◽  
R. N. Bhargava ◽  
P. J. Dean
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity
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