Low‐temperature photoluminescence of sulfur‐ and magnesium‐doped InGaP epilayers grown by liquid‐phase epitaxy

1996 ◽  
Vol 79 (4) ◽  
pp. 2060-2064 ◽  
Author(s):  
Gwo‐Cherng Jiang
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Low Temperature Photoluminescence

Identification and Sources of Impurities in InGaAs Grown by Liquid Phase Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
D. G. Knight ◽  
C. J. Miner ◽  
A. Majeed
Keyword(s):  
High Temperature ◽  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Photoluminescence Spectra ◽  
Donor And Acceptor ◽  
Sulfur Containing ◽  
Sulfur Containing Compounds ◽  
Low Temperature Photoluminescence

ABSTRACTHigh purity In.53 Ga.47 As and InP with carrier concentrations [ND–NA] < 5×1015 cm−3 has been grown by the LPE technique on both n-type and semi-insulating substrates to detect and identify trace donor and acceptor impurities. Acceptor impurities have been detected in low temperature photoluminescence spectra where LPE melt baking and growth programs indicate a melt origin for two of these species, one of which is zinc. Data from semiconductor profiles provides evidence for sulfur and tin donor impurities, which comes from the rinse melt used to etch back substrates doped with the respective contaminants. Silicon and sulfur contaminants have been detected by SIMS measurements; and may arise not only from the indium and III-V materials, but also the graphite boat used to grow the epilayers. Volatile sulfur-containing compounds have been detected during high temperature bake-out of high purity graphite boats.

Low temperature photoluminescence ofn‐type GaInAsP layers grown on InP by liquid phase epitaxy

1983 ◽  
Vol 54 (9) ◽  
pp. 5363-5368 ◽  
Author(s):  
B. Beaumont ◽  
G. Nataf ◽  
J. C. Guillaume ◽  
C. Vèrié
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Low Temperature Photoluminescence

PHOTOLUMINESCENCE STUDIES OF GaInArSb HIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1645-1649
Author(s):  
J. DÍAZ-REYES ◽  
E. CORONA-ORGANICHE ◽  
J. L. HERRERA-PÉREZ ◽  
O. ZARATE-CORONA ◽  
J. MENDOZA-ALVAREZ
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Electron Concentration ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
Pl Spectra ◽  
Photoluminescence Studies ◽  
Neutral Acceptor ◽  
Dominant Peak ◽  
Low Temperature Photoluminescence

Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 – 2 × 1020 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2, disappears.

Low-temperature liquid-phase epitaxy of YBa2Cu3Oyfilms by the molten KOH method

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ13 ◽  
Author(s):  
Shuhei Funaki ◽  
Yasuji Yamada ◽  
Ryota Okunishi ◽  
Yugo Miyachi
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Liquid

Low threshold quantum well AlGaAs-heterolasers fabricated by low temperature liquid phase epitaxy

1991 ◽  
Author(s):  
V. M. Andreev ◽  
A. B. Kazantsev ◽  
V. R. Larlonov ◽  
V. D. Rumyantsev ◽  
V. P. Khvostikov
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Low Threshold ◽  
Temperature Liquid

Low-temperature growth of midwavelength infrared liquid phase epitaxy HgCdTe on sapphire

1991 ◽  
Author(s):  
S. Johnston ◽  
E. R. Blazejewski ◽  
J. Bajaj ◽  
J. S. Chen ◽  
L. Bubulac ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Low temperature liquid phase epitaxy with Sn-based solvent

2007 ◽  
Vol 4 (4) ◽  
pp. 1397-1400 ◽  
Author(s):  
F. Abdo ◽  
A. Fave ◽  
M. Lemiti ◽  
A. Pisch ◽  
C. Bernard
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Liquid
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