Thermogravimetric Measurements in an Electroynamic Balance

1986 ◽  
Vol 87 ◽  
Author(s):  
R. E. Spjut ◽  
J. F. Elliott ◽  
P. Bolsaitis
Keyword(s):  
High Temperature ◽  
Thermogravimetric Analysis ◽  
Laser Beam ◽  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Time Resolution ◽  
Pulse Heating ◽  
Relative Temperature ◽  
Plasma Torches ◽  
Kinetics Of

AbstractAn Electrodynamic Thermogravimetric Analysis (EDTGA) Instrument has been developed for the study of kinetics of gas-solid reactions and phase transformations of levitated particles at high temperature. The levitated particles may be heated with a focused laser beam and their temperature and weight monitored during the process. The particles that can be studied are, approximately, 10 to 150 microns in diameter and it is aimed to produce temperature pulses comparable to those encountered in plasma torches and reactors. The instrumentation implemented in the system permits the measurement and or control of relative temperature, weight change, and energy flux to the particle with a time resolution of less than one millisecond. Selected results obtained from pulse heating aluminum oxide and silicon dioxide are presented.

scholarly journals Performance Improvement of a Nonvolatile UV TD Sensor Using SAHAOS with a High Temperature Annealed, Partially Nano-Crystallized Trapping Layer

Sensors ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 1570
Author(s):  
Wen-Ching Hsieh
Keyword(s):  
High Temperature ◽  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Performance Improvement ◽  
Silicon Oxide ◽  
Sensor Technology ◽  
Promising Candidate ◽  
Induced Charge Density ◽  
Induced Charge ◽  
Fading Rate

This study shows that a silicon–aluminum oxide–hafnium aluminum oxide-silicon oxide–silicon capacitor device with a high temperature pre-metal-anneal-treated and partially-nanocrystallized hafnium aluminum oxide, (hereafter PNC-SAHAOS) can successfully increase the performance of a nonvolatile ultraviolet radiation total dose (hereafter UV TD) sensor. The experimental results show that the UV-induced threshold voltage VT shift of PNC-SAHAOS was 10 V after UV TD 100 mW·s/cm2 irradiation. The UV-induced charge density of PNC-SAHAOS is almost eight times that of amorphous silicon–aluminum oxide–silicon nitride–silicon dioxide–silicon SANOS. Moreover, the charge fading rate of ten-years retention on PNC-SAHAOS, even at 85 °C, is below 10%. At 85 °C, the charge fading rate of ten-years retention on amorphous SANOS is almost twice that on PNC-SAHAOS. These results strongly suggest that PNC-SAHAOS could be the most promising candidate for next-generation nonvolatile UV TD sensor technology.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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