scholarly journals Performance Improvement of a Nonvolatile UV TD Sensor Using SAHAOS with a High Temperature Annealed, Partially Nano-Crystallized Trapping Layer

Sensors ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 1570
Author(s):  
Wen-Ching Hsieh
Keyword(s):  
High Temperature ◽  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Performance Improvement ◽  
Silicon Oxide ◽  
Sensor Technology ◽  
Promising Candidate ◽  
Induced Charge Density ◽  
Induced Charge ◽  
Fading Rate

This study shows that a silicon–aluminum oxide–hafnium aluminum oxide-silicon oxide–silicon capacitor device with a high temperature pre-metal-anneal-treated and partially-nanocrystallized hafnium aluminum oxide, (hereafter PNC-SAHAOS) can successfully increase the performance of a nonvolatile ultraviolet radiation total dose (hereafter UV TD) sensor. The experimental results show that the UV-induced threshold voltage VT shift of PNC-SAHAOS was 10 V after UV TD 100 mW·s/cm2 irradiation. The UV-induced charge density of PNC-SAHAOS is almost eight times that of amorphous silicon–aluminum oxide–silicon nitride–silicon dioxide–silicon SANOS. Moreover, the charge fading rate of ten-years retention on PNC-SAHAOS, even at 85 °C, is below 10%. At 85 °C, the charge fading rate of ten-years retention on amorphous SANOS is almost twice that on PNC-SAHAOS. These results strongly suggest that PNC-SAHAOS could be the most promising candidate for next-generation nonvolatile UV TD sensor technology.

scholarly journals Improve the Performance of SONOS Type UV TD Sensors Using IOHAOS with Enhanced UV Transparency ITO Gate

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 408
Author(s):  
Wen-Ching Hsieh ◽  
Fun-Cheng Jong ◽  
Wei-Ting Tseng
Keyword(s):  
Aluminum Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Silicon Oxide ◽  
Poly Silicon ◽  
Ito Film ◽  
Post Annealing ◽  
Response Performance ◽  
Fading Rate ◽  
Silicon Device

This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon oxide–silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose (hereafter UV TD) sensor. Post annealing process is used to optimize UV optical transmission and electrical resistivity characterization in ITO film. Via nano-columns (NCols) crystalline transformation of ITO film, UV transparency of ITO film can be enhanced. UV radiation causes the threshold voltage VT of the E-IOHAOS device to increase, and the increase of the VT of E-IOHAOS device is also related to the UV TD. The experimental results show that under UV TD irradiation of 100 mW·s/cm2, ultraviolet light can change the threshold voltage VT of E-IOHAOS to 12.5 V. Moreover, the VT fading rate of ten-years retention on E-IOHAOS is below 10%. The VT change of E-IOHAOS is almost 1.25 times that of poly silicon–aluminum oxide–hafnium aluminum oxide–silicon oxide–silicon with poly silicon gate device (hereafter SAHAOS). The sensing response performance of an E-IOHAOS UV TD sensor is greatly improved by annealed ITO gate.

Thermogravimetric Measurements in an Electroynamic Balance

1986 ◽  
Vol 87 ◽  
Author(s):  
R. E. Spjut ◽  
J. F. Elliott ◽  
P. Bolsaitis
Keyword(s):  
High Temperature ◽  
Thermogravimetric Analysis ◽  
Laser Beam ◽  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Time Resolution ◽  
Pulse Heating ◽  
Relative Temperature ◽  
Plasma Torches ◽  
Kinetics Of

AbstractAn Electrodynamic Thermogravimetric Analysis (EDTGA) Instrument has been developed for the study of kinetics of gas-solid reactions and phase transformations of levitated particles at high temperature. The levitated particles may be heated with a focused laser beam and their temperature and weight monitored during the process. The particles that can be studied are, approximately, 10 to 150 microns in diameter and it is aimed to produce temperature pulses comparable to those encountered in plasma torches and reactors. The instrumentation implemented in the system permits the measurement and or control of relative temperature, weight change, and energy flux to the particle with a time resolution of less than one millisecond. Selected results obtained from pulse heating aluminum oxide and silicon dioxide are presented.

Assessing the Condition and Estimating the Remaining Lives of Pressure Components in a Methanol Plant Reformer: Part 1 — NDE

2016 ◽  
Author(s):  
Brian E. Shannon ◽  
Carl E. Jaske ◽  
Gustavo Miranda
Keyword(s):  
High Temperature ◽  
Creep Damage ◽  
Sensor Technology ◽  
Special Focus ◽  
Laser Measurements ◽  
Typical Data ◽  
Multiple Sensor ◽  
High Temperature Components ◽  
Inspection Techniques ◽  
Non Destructive

Statoil Tjelbergodden operates a 2,400 ton/day methanol plant in Norway. In order to assess the condition and reliability of high temperature components within the reformer, a series of advanced non-destructive examination (NDE) technologies were applied to radiant catalyst tubes, outlet pigtails, and outlet collection headers. The inspection techniques were selected and developed to provide data that could easily be used in the engineering assessment of the high-temperature components. Special focus was given to detecting and quantifying high-temperature creep damage. This paper describes the NDE techniques that were employed and provides examples of typical data obtained by using the techniques. Catalyst tubes were inspected using the H SCAN® (Figure 1) multiple sensor technology. This technique utilizes two types of ultrasonic sensors, eddy current sensors, laser measurements, and elevation location sensors in scanning each catalyst tube. The H SCAN® P-CAT™ (Figure 2) technique is applied to outlet pigtails, while the H SCAN® H-CAT™ (Figure 3) technique is applied to outlet headers.

scholarly journals Thermal Expansion and Electro-Elastic Features of Ba2TiSi2O8 High Temperature Piezoelectric Crystal

Crystals ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 11 ◽  
Author(s):  
Chao Jiang ◽  
Feifei Chen ◽  
Fapeng Yu ◽  
Shiwei Tian ◽  
Xiufeng Cheng ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Elastic Properties ◽  
Piezoelectric Coefficient ◽  
Linear Thermal Expansion ◽  
Temperature Stability ◽  
Promising Candidate ◽  
Temperature Range ◽  
Sensor Applications ◽  
High Temperature Sensor

A high-quality Ba2TiSi2O8 (BTS) single crystal was grown using the Czochralski (Cz) pulling method. The thermal expansion and electro-elastic properties of BTS crystal were studied for high temperature sensor applications. The relative dielectric permittivities ε 11 T / ε 0 and ε 33 T / ε 0 were determined to be 16.3 and 11.8, while the piezoelectric coefficients d15, d31, d33 were found to be 17.8, 2.9, and 4.0 pC/N, respectively. Temperature dependence of electro-elastic properties were investigated, where the variation of elastic compliance s 55 E (= s 44 E ) was found to be <6% over temperature range of 20–700 °C. Taking advantage of the anisotropic thermal expansion, linear thermal expansion comparable to insulating alumina ceramic was achieved over temperature range up to 650 °C. The optimum crystal cut with large effective piezoelectric coefficient (>8.5 pC/N) and linear thermal expansion coefficient (8.03 ppm/°C) achieved for BTS crystal along the (47°, φ) direction (φ is arbitrary in 0–360°), together with its good temperature stability up to 650 °C, make BTS crystal a promising candidate for high temperature piezoelectric sensors.

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

scholarly journals Pressure-induced charge density wave phase in Ag2−δTe

2018 ◽  
Vol 98 (20) ◽  
Author(s):  
Yongsheng Zhao ◽  
Wenge Yang ◽  
Harold S. Schnyders ◽  
Anke Husmann ◽  
Ganghua Zhang ◽  
...  
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Density Wave ◽  
Wave Phase ◽  
Induced Charge Density ◽  
Charge Density Wave Phase ◽  
Induced Charge
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