ChemInform Abstract: MICROSTRUCTURE AND KINETICS OF CRYSTALLIZATION OF MAGNESIUM OXIDE-ALUMINUM OXIDE-SILICON DIOXIDE GLASS-CERAMICS

1978 ◽  
Vol 9 (33) ◽  
Author(s):  
W. A. ZDANIEWSKI
Keyword(s):  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Magnesium Oxide ◽  
Glass Ceramics ◽  
Kinetics Of Crystallization ◽  
Kinetics Of

Concurrent kinetics of crystallization and toughening in multicomponent biomedical SiO2-Li2O-P2O5-ZrO2 glass-ceramics

2021 ◽  
Vol 554 ◽  
pp. 120607
Author(s):  
Julia Lubauer ◽  
Renan Belli ◽  
Anselm Petschelt ◽  
Maria Rita Cicconi ◽  
Katrin Hurle ◽  
...  
Keyword(s):  
Glass Ceramics ◽  
Kinetics Of Crystallization ◽  
Kinetics Of

Temperature dependence of the bulk modulus of solids in the magnesium oxide-aluminum oxide (AlO1.5)silicon dioxide system

1985 ◽  
Vol 89 (12) ◽  
pp. 2682-2687 ◽  
Author(s):  
Reed A. Howald ◽  
Richard D. Jones ◽  
Ahmed B. Rezvani ◽  
Bimalendu N. Roy ◽  
Matthew J. Scanlon ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Bulk Modulus ◽  
Temperature Dependence ◽  
Magnesium Oxide

Thermogravimetric Measurements in an Electroynamic Balance

1986 ◽  
Vol 87 ◽  
Author(s):  
R. E. Spjut ◽  
J. F. Elliott ◽  
P. Bolsaitis
Keyword(s):  
High Temperature ◽  
Thermogravimetric Analysis ◽  
Laser Beam ◽  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Time Resolution ◽  
Pulse Heating ◽  
Relative Temperature ◽  
Plasma Torches ◽  
Kinetics Of

AbstractAn Electrodynamic Thermogravimetric Analysis (EDTGA) Instrument has been developed for the study of kinetics of gas-solid reactions and phase transformations of levitated particles at high temperature. The levitated particles may be heated with a focused laser beam and their temperature and weight monitored during the process. The particles that can be studied are, approximately, 10 to 150 microns in diameter and it is aimed to produce temperature pulses comparable to those encountered in plasma torches and reactors. The instrumentation implemented in the system permits the measurement and or control of relative temperature, weight change, and energy flux to the particle with a time resolution of less than one millisecond. Selected results obtained from pulse heating aluminum oxide and silicon dioxide are presented.

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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