Thin Film Polycrystalline Si by Cs Solution Growth Technique

1994 ◽  
Vol 358 ◽  
Author(s):  
Richard L. Wallace ◽  
Wayne A. Anderson ◽  
K. M. Jones
Keyword(s):  
Substrate Surface ◽  
Hole Mobility ◽  
Minority Carrier Lifetime ◽  
Deposition Process ◽  
Xrd Analysis ◽  
Growth Technique ◽  
Polysilicon Films ◽  
Solution Layer ◽  
P Type ◽  
Deposited Films

ABSTRACTA deposition process has been developed which allows the growth of large grain (20+ μm) polysilicon films on SiO2 substrates at a growth temperature of 650° C. A thin layer of liquid Si-metal solution is formed on the substrate surface as the growth medium. This layer is kept saturated by Si flux from a DC magnetron sputter gun. XRD analysis of the deposited films show a strong (111) preferred orientation, with increasing integrated peak intensities with increasing depositon temperature and solution layer thickness. Films deposited using an In-Si solution are p-type, with carrier concentrations in the mid 1016 cm−3 range. Conductivities of ∼.2 (Ω cm)−1 were measured, with activation energies for both carrier generation and conductivity of about 135meV. The hole mobility was found to be ∼ 30 cm2 V−1s−1. A wetting layer is used which may have a detrimental effect on the minority carrier lifetime.

Application of Magnetic Ferrite Electrodeposition and Copper Chemical Mechanical Planarization for On-Chip Analog Circuitry

2005 ◽  
Vol 869 ◽  
Author(s):  
Cody Washburn ◽  
Daniel Brown ◽  
Jay Cabacungan ◽  
Jayanti Venkataraman ◽  
Santosh K. Kurinec
Keyword(s):  
Analog Circuit ◽  
Substrate Surface ◽  
Chemical Mechanical Planarization ◽  
Deposition Process ◽  
Magnesium Nitrate ◽  
Silicon Substrates ◽  
Ferrite Material ◽  
Zn Ferrite ◽  
On Chip ◽  
P Type

AbstractInductors are important components of analog circuit designs, from matching circuitry to passive filters. In this study, the application of electrophoretically deposited nano-ferrite material has been investigated as a technique to increase the inductance of integrated copper planar inductors fabricated using copper plating and chemical mechanical planarization. Sintered Mn-Zn ferrite particles are suspended in a medium of isopropyl alcohol with magnesium nitrate and lanthanum nitrate salts. The transportation of the particles to the substrate surface is assisted by applied electric field and particles adhere to the substrate surface by a glycerol based surfactant. Electrophorectic deposition process forms a self aligned polymeric thin film on the surface of a p-type silicon substrate selectively with respect to copper. This ferrite deposition method yields high selectivity to the inductor coils and patterned silicon substrates compatible with standard silicon technology.

scholarly journals Bandgap Tuning of High Mobility Magnetron Sputtered Copper (I) Oxide Thin Films for Perovskite Solar Cell Applications

2021 ◽  
Vol 5 (1) ◽  
pp. 51-54
Author(s):  
Mohammad Istiaque Hossain ◽  
Brahim Aïssa ◽  
Ali Bentouaf ◽  
Said A. Mansour
Keyword(s):  
Thin Films ◽  
Perovskite Solar Cells ◽  
Hole Mobility ◽  
Hole Transport ◽  
Transport Layer ◽  
Morphological Properties ◽  
Charge Carrier Density ◽  
Cu2o Thin Films ◽  
P Type ◽  
Deposited Films

We report on the successful growth optimization of an inorganic p-type copper oxide (Cu2O) thin films for various energy applications. First, Cu2O thin films of a typical thickness of 100 nm are deposited on fluorine-doped tin oxide (FTO) coated glass substrates by DC-reactive magnetron sputtering, followed by their in-depth characterization with different techniques, including scanning electron and atomic force microscopies, UV-Vis, X-ray diffraction and photoelectron spectroscopies, to probe their structural, optical, and morphological properties. Surface topology analysis revealed homogeneous, compact, and uniform sputtered deposited films. The as deposited films layers have shown a preferential crystal orientation of (111) and a stoichiometry of CuO, at the surface, which is believed to be mainly due to the oxidization effect of the non-capsulated surface, while a short-duration argon etching (~ 5 s) has revealed the growth of Cu2O films stoichiometry. Finally, during the reactive plasma deposition, films were grown under nitrogen gas flow to improve their hole-mobility, followed by a systematic annealing at various temperatures ranging from 100 to 250 °C to improve their crystalline structure. Hall effect measurement confirmed that the Cu2O thin film are p-type, with extremely high electronic properties, including an electrical conductivity of 2.6 × 102 S/cm, a hole mobility of about 30 cm2/Vs and a charge carrier density around 5 × 1019 cm-3, making them a serious candidate for a hole transport layer in perovskite solar cells.

Characteristics of a phosphorus-doped p-type ZnO film by MBE

2005 ◽  
Vol 892 ◽  
Author(s):  
Faxian Xiu ◽  
Zheng Yang ◽  
Mandalapu J. Leelaprasanna ◽  
Jianlin Liu
Keyword(s):  
Hole Concentration ◽  
Substrate Surface ◽  
Hole Mobility ◽  
Effusion Cell ◽  
X Ray Diffraction ◽  
Pl Spectra ◽  
Hall Effect Measurements ◽  
Acceptor Energy Level ◽  
P Type ◽  
Phosphorus Doped

AbstractA solid-source GaP effusion cell was used to provide phosphorus dopants to achieve p-type ZnO with molecular-beam epitaxy (MBE). Room temperature (RT) Hall-effect measurements reveal that phosphorus-doped ZnO has a strong p-type conduction with a hole concentration of 6.5×1018 cm-3 and a hole mobility of 9.0 cm2/V s. X-ray diffraction measurements show a preferential growth orientation along <11-20> by θ-2θ scan and a tilt of ZnO (11-20) plane relative to the substrate surface by rocking curve and reciprocal space map. Photoluminescence (PL) spectra at 8.5 K show a dominant acceptor-bound exciton emission at 3.319 eV. The acceptor energy level of the phosphorus dopant is calculated to be 0.18 eV above the valence band from PL spectra, which is consistent with the temperature dependence of PL measurements.

scholarly journals Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Abderrahime Sekkat ◽  
Viet Huong Nguyen ◽  
César Arturo Masse de La Huerta ◽  
Laetitia Rapenne ◽  
Daniel Bellet ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Hole Mobility ◽  
Atomic Layer ◽  
Shallow Acceptor ◽  
Layer Deposition ◽  
Type Semiconductor ◽  
Cost Efficient ◽  
P Type ◽  
Deposited Films

AbstractCu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu2O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu2O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

scholarly journals Aqueous Sol-Gel Synthesis of Different Iron Ferrites: From 3D to 2D

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1554
Author(s):  
Justinas Januskevicius ◽  
Zivile Stankeviciute ◽  
Dalis Baltrunas ◽  
Kęstutis Mažeika ◽  
Aldona Beganskiene ◽  
...  
Keyword(s):  
Magnetic Measurements ◽  
Substrate Surface ◽  
Sol Gel ◽  
Synthesis Method ◽  
Xrd Analysis ◽  
Dip Coating ◽  
Yttrium Iron ◽  
Iron Garnet ◽  
Dip Coating Technique ◽  
Sol Gel Synthesis

In this study, an aqueous sol-gel synthesis method and subsequent dip-coating technique were applied for the preparation of yttrium iron garnet (YIG), yttrium iron perovskite (YIP), and terbium iron perovskite (TIP) bulk and thin films. The monophasic highly crystalline different iron ferrite powders have been synthesized using this simple aqueous sol-gel process displaying the suitability of the method. In the next step, the same sol-gel solution was used for the fabrication of coatings on monocrystalline silicon (100) using a dip-coating procedure. This resulted, likely due to substrate surface influence, in all coatings having mixed phases of both garnet and perovskite. Thermogravimetric (TG) analysis of the precursor gels was carried out. All the samples were investigated by X-ray powder diffraction (XRD) analysis. The coatings were also investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Mössbauer spectroscopy. Magnetic measurements were also carried out.

scholarly journals First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1649
Author(s):  
Gemechis D. Degaga ◽  
Sumandeep Kaur ◽  
Ravindra Pandey ◽  
John A. Jaszczak
Keyword(s):  
Density Functional ◽  
Van Der Waals ◽  
Hole Mobility ◽  
Functional Theory ◽  
Mos2 Monolayer ◽  
Naturally Occurring ◽  
Weak Interlayer ◽  
Bulk Structure ◽  
P Type ◽  
Interlayer Bonding

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

High Volume Production Growth of GaAs on Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim
Keyword(s):  
Schottky Diodes ◽  
High Volume ◽  
Wafer Surface ◽  
Silicon Substrates ◽  
Growth Technique ◽  
Wafer Thickness ◽  
Production Growth ◽  
High Volume Production ◽  
Volume Production ◽  
P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

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