Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

2005 ◽  
Vol 864 ◽  
Author(s):  
Jaime Mimila Arroyo ◽  
Michel Barbé ◽  
François Jomard ◽  
Dominique Ballutaud ◽  
Jacques Chevallier ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Electron Mobility ◽  
Electrical Characteristics ◽  
Deuterium Plasma ◽  
Scattering Centers

AbstractWe have studied the influence of a deuterium diffusion on the electrical characteristics of the 2D gas present in AlGaN/GaN heterostructures. The deuterium diffusion is performed by exposing the structures to a rf remote deuterium plasma. We find that both the sheet carrier concentration and the electron mobility decrease and that these effects are partly reversible under thermal annealing. These results suggest that deuterium behave as acceptors in the 2D gas region. The negatively charged deuterium act as additional scattering centers for electrons.

Modification of the Electrical Properties of a GaAs Surface by Plasma Exposure

1986 ◽  
Vol 68 ◽  
Author(s):  
Moshe Oren ◽  
Stanley Zemon;
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Carrier Concentration ◽  
Room Temperature ◽  
Plasma Processing ◽  
Deep Levels ◽  
Gaas Surface ◽  
Helium Plasma ◽  
Electrical Characteristics ◽  
Plasma Exposure

AbstractPlasma processing is an essential part for the fabrication of GaAs ICs.It was found that the exposure of sulfur doped n-type GaAs layers to a plasma of helium, oxygen, or nitrogen changed their electrical characteristics without introducing crystalline damage, as observed by electron diffraction measurments or etching.Exposure to a plasma depletes the surface carrier concentration but the mobility remains unchanged.Compared to O2 and N2 the helium plasma has the largest effect on the GaAs surface.Exposure of S-doped GaAs layers to a He plasma at 350°C produces two new deep levels at 840-nm and in the region between 863 and 872-nm.These levels were not observed for a He plasma exposure at room temperature or for O2 plasma exposure at 350°C.

scholarly journals Peculiarities of Electrical Characteristics of Semi-Insulating CdTe-Сl crystals

2017 ◽  
Vol 18 (3) ◽  
pp. 334-337
Author(s):  
Ye.S. Nykoniuk ◽  
Z.I. Zakharuk ◽  
S.V. Solodin ◽  
P.M. Fochuk ◽  
S.G. Dremluyzhenko ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Mobility ◽  
Specific Resistance ◽  
Photochemical Reactions ◽  
Electrical Characteristics ◽  
Hole Conductivity ◽  
Potential Relief ◽  
Exponential Temperature Dependence ◽  
Vertical Bridgman ◽  
Impurity System

Electrical properties of semi-insulating CdTe-Сl crystals, grown by the vertical Bridgman and the travelling heater method, have been studied. It is found that the travelling heater method provides electron conductivity of the crystals, and the vertical Bridgman method – hole conductivity. Specific resistance of the samples is of (108-109) Ohm×сm at 300 K, and Hall mobility of the holes and electrons is of (45 - 55) cm2/V·s and (10 - 20) cm2/V·s respectively. Very low values of electron mobility and an exponential temperature dependence of µn are due to drift barriers with a height of εb ≈ 0.20 eV. Formation of the barriers is caused by the fluctuations of the potential relief resulting from the microheterogeneity of the defect-impurity system. Quasi-photochemical reactions that reduce electron mobility after photo-excitation have been observed in n-CdTe-Cl samples. In p-CdTe-Cl samples, neither drift barriers, nor quasi-photochemical reactions were detected. 

Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
J. Mimila-Arroyo ◽  
J.F. Rommeluère ◽  
M. Barbé ◽  
F. Jomard ◽  
A. Tromson-Carli ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Vapor Transport ◽  
Zno Films ◽  
Closed Space ◽  
Free Atmosphere ◽  
Flat Surfaces ◽  
Sapphire Substrates ◽  
Interface Conduction

AbstractThe growth of ZnO films deposited by Closed Space Vapor Transport (CSVT) on sapphire substrates has been investigated. Deposition on R oriented sapphire substrates gives rise to a-(11-20) oriented ZnO films. Under optimised conditions, flat surfaces can be achieved and rocking curves with full half width below 500 arcsec are observed. The electrical properties of the films were studied. Hall measurements reveal that the measured n-carrier concentration decreases linearly upon the thickness of the sample. This is interpreted as interface conduction probably related to diffusion of aluminium from the substrate. On thinnest films, the n-carrier concentration can be dramatically decreased with thermal annealing under oxygen. Furthermore, the effect of this annealing under oxygen is found to be completely reversible after a further thermal annealing under oxygen free atmosphere.

Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal

1987 ◽  
Vol 92 ◽  
Author(s):  
S.G. Liu ◽  
S.Y. Narayan ◽  
C.W. Magee ◽  
C.P. Wu ◽  
F. Kolondra ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Ion Implantation ◽  
Carrier Concentration ◽  
Concentration Profiles ◽  
Electrical Characteristics ◽  
Good Surface ◽  
Active Layers ◽  
P Type ◽  
Controlled Doping

ABSTRACTRapid thermal annealing (4−7s) of 28Si and 9Be implants in VPE-grown In0.53Ga0.47As has produced n- and p-type active layers with controlled doping levels between 1017 and 3×1018 cm−3. The multiple-implant schedules were based on Rp and ΔR data derived from SIMS measurements on single-energy implants. The activated n- and p-type layers have a good surface morphology and 300 K mobilities of 3000–7000 and 100–200 cm2 /V−s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /ΔRp information are presented.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Optical and Electrical Characteristics of Amorphous InGaZnO after Thermal Annealing

2008 ◽  
Author(s):  
Satoshi Taniguchi ◽  
Norihiko Yamaguchi ◽  
Takao Miyajima ◽  
Masao Ikeda
Keyword(s):  
Thermal Annealing ◽  
Electrical Characteristics ◽  
Amorphous Ingazno

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0-0.3)

2021 ◽  
Author(s):  
Woohui Lee ◽  
Changmin Lee ◽  
Jinyong Kim ◽  
Jehoon Lee ◽  
Deokjoon Eom ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Alloy Film ◽  
Electrical Characteristics

To understand the effect of H2S pre-annealing treatment on a Si1-xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1-xGex were studied while varying the Ge concentration (x value)...

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