Modification of the Electrical Properties of a GaAs Surface by Plasma Exposure

1986 ◽  
Vol 68 ◽  
Author(s):  
Moshe Oren ◽  
Stanley Zemon;
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Carrier Concentration ◽  
Room Temperature ◽  
Plasma Processing ◽  
Deep Levels ◽  
Gaas Surface ◽  
Helium Plasma ◽  
Electrical Characteristics ◽  
Plasma Exposure

AbstractPlasma processing is an essential part for the fabrication of GaAs ICs.It was found that the exposure of sulfur doped n-type GaAs layers to a plasma of helium, oxygen, or nitrogen changed their electrical characteristics without introducing crystalline damage, as observed by electron diffraction measurments or etching.Exposure to a plasma depletes the surface carrier concentration but the mobility remains unchanged.Compared to O2 and N2 the helium plasma has the largest effect on the GaAs surface.Exposure of S-doped GaAs layers to a He plasma at 350°C produces two new deep levels at 840-nm and in the region between 863 and 872-nm.These levels were not observed for a He plasma exposure at room temperature or for O2 plasma exposure at 350°C.

Electrical Properties of Heavily Be-doped GaAs grown by Molecular Beam Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
H. Shibata ◽  
Y. Makita ◽  
A. Yamada ◽  
N. Ohnishi ◽  
M. Mori ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Valence Band ◽  
Temperature Region ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impurity Band ◽  
Carrier Scattering

AbstractElectrical properties of heavily Be-doped GaAs grown by molecular beam epitaxy were investigated systematically in a wide range of Be-concentration from 1× 1014 up to 2× 1020 cm-3 by using yan der Pauw technique. Probable carrier scattering mechanisms observed in this work are discussed by taking into account the radiative mechanisms of several new photoluminescence emissions previously observed in the band-edge-emission region of the samples. All samples were checked their electrical properties first at room-temperature. Five selected samples out of them were measured from 10° K up to room-temperature. Samples having the carrier concentration from 1014 to 1018 cm3 presented typical semiconductor-like conduction with finite carrier excitation energy. For samples having carrier concentration 7× 1016 cm -3, the conduction mechanism at high temperature region above 30β K was dominated by holes thermally excited into valence band. At low temperature region below 30° K . it was dominated by holes hopping from neutral to ionized acceptors with the assistance of phonons. Hole mobilities of samples having the carrier concentration from 1017 to 1018 cm-3 showed an anomalous behavior in the low temperature region, which suggests the presence of a new type of carrier scattering mechanism. A radiative center denoted by lg-gl observed in this concentration region will be a candidate scattering center to explain these electrical behaviors. Samples having the carrier concentration larger than 1019 cm-3 demonstrated typically metallic electric conduction not owing to thermally excited carriers, which means that an impurity band is formed but merged with valence band. The density of state of this combined valence band mixed with impurity band can be supposed to reflect carrier concentration dependence of the PL emission bands observed in this region, i.e. [g-g]α , [g-g]β and [g-g]γ .

Electrical Properties of InN Grown by RF-MBE

2000 ◽  
Vol 639 ◽  
Author(s):  
Yoshiki Saito ◽  
Nobuaki Teraguchi ◽  
Akira Suzuki ◽  
Tomohiro Yamaguchi ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Carrier Density ◽  
Room Temperature ◽  
High Energy ◽  
Rf Plasma ◽  
Plasma Power ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTInN films with excellent surface morphology were grown by controlled the V/III ratio of InN epitaxal layer. It was found they were single crystal of InN films with wurtzite structure by X-ray diffraction (XRD) measurement and reflection high-energy electron diffraction (RHEED) observation. Hall mobility as high as 760 cm2/Vs was achieved for InN film grown at 550°C with 240 W of RF plasma power with a carrier density of 3.0×1019 cm−3 at room temperature. To our knowledge, this electron mobility is the highest value ever reported.

Damage Introduced by Chdamage Introduced by CH4/H2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs

1991 ◽  
Vol 240 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
W. De Raedt ◽  
C. Van Hoof ◽  
G. Borghs ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Reactive Ion Etching ◽  
Electrical Characteristics ◽  
Plasma Exposure ◽  
Ion Etching ◽  
Hall Measurements ◽  
Low Temperature Photoluminescence

ABSTRACTThe damage introduced by CH4/H2 reactive ion etching (RIE) and its recovery after thermal annealing has been investigated by Hall measurements and low temperature photoluminescence (PL) on pseudomorphic AlGaAs/InGaAs modulation doped structures. After plasma exposure, the PL intensity has significantly decreased and shifted in energy. In order to study the recovery of the damage introduced by the plasma, thermal annealing was done at temperatures between 350 and 500°C. We observed that the luminescence emission is totally recovered after annealing at 450°C. Hall measurements at room temperature (RT) and at 77K showed that the electrical characteristics of these structures can be restored only after thermal annealing at 500°C.The optimised etching conditions have been applied in a fabrication process for submicron dry gate recessed pseudomorphic delta-doped AlGaAs/InGaAs modulation doped field effect transistors (MODFETs). For a 0.25 mm gatelength device the maximum DC transconductance value was as high as 680 mS/mm. The same value was extracted from measurements at 15 GHz.

Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal

1987 ◽  
Vol 92 ◽  
Author(s):  
S.G. Liu ◽  
S.Y. Narayan ◽  
C.W. Magee ◽  
C.P. Wu ◽  
F. Kolondra ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Ion Implantation ◽  
Carrier Concentration ◽  
Concentration Profiles ◽  
Electrical Characteristics ◽  
Good Surface ◽  
Active Layers ◽  
P Type ◽  
Controlled Doping

ABSTRACTRapid thermal annealing (4−7s) of 28Si and 9Be implants in VPE-grown In0.53Ga0.47As has produced n- and p-type active layers with controlled doping levels between 1017 and 3×1018 cm−3. The multiple-implant schedules were based on Rp and ΔR data derived from SIMS measurements on single-energy implants. The activated n- and p-type layers have a good surface morphology and 300 K mobilities of 3000–7000 and 100–200 cm2 /V−s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /ΔRp information are presented.

Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

2005 ◽  
Vol 864 ◽  
Author(s):  
Jaime Mimila Arroyo ◽  
Michel Barbé ◽  
François Jomard ◽  
Dominique Ballutaud ◽  
Jacques Chevallier ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Electron Mobility ◽  
Electrical Characteristics ◽  
Deuterium Plasma ◽  
Scattering Centers

AbstractWe have studied the influence of a deuterium diffusion on the electrical characteristics of the 2D gas present in AlGaN/GaN heterostructures. The deuterium diffusion is performed by exposing the structures to a rf remote deuterium plasma. We find that both the sheet carrier concentration and the electron mobility decrease and that these effects are partly reversible under thermal annealing. These results suggest that deuterium behave as acceptors in the 2D gas region. The negatively charged deuterium act as additional scattering centers for electrons.

Electrical Properties of Nanoscale Tisi2 Islands on Si

1999 ◽  
Vol 583 ◽  
Author(s):  
Jaehwan Oh ◽  
Hoon Ham ◽  
Peter Laloli ◽  
R. J. Nemanich
Keyword(s):  
Electrical Properties ◽  
High Temperatures ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Electron Tunneling ◽  
Electrical Characteristics ◽  
Single Electron Tunneling ◽  
Coulomb Staircase ◽  
Beam Deposition

AbstractNanoscale TiSi2 islands are formed by electon beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800–1000°C). The typical island sizes were ˜10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Evidence for ordered Fe3Ni

1987 ◽  
Vol 45 ◽  
pp. 216-217
Author(s):  
K.B. Reuter ◽  
D.B. Williams ◽  
J.I. Goldstein
Keyword(s):  
Experimental Data ◽  
Martensitic Transformation ◽  
Electron Diffraction ◽  
Room Temperature ◽  
Direct Evidence ◽  
Transformation Product ◽  
Iron Meteorites ◽  
X Ray ◽  
Ni Content ◽  
Temperature Transformation

In the Fe-Ni system, although ordered FeNi and ordered Ni3Fe are experimentally well established, direct evidence for ordered Fe3Ni is unconvincing. Little experimental data for Fe3Ni exists because diffusion is sluggish at temperatures below 400°C and because alloys containing less than 29 wt% Ni undergo a martensitic transformation at room temperature. Fe-Ni phases in iron meteorites were examined in this study because iron meteorites have cooled at slow rates of about 10°C/106 years, allowing phase transformations below 400°C to occur. One low temperature transformation product, called clear taenite 2 (CT2), was of particular interest because it contains less than 30 wtZ Ni and is not martensitic. Because CT2 is only a few microns in size, the structure and Ni content were determined through electron diffraction and x-ray microanalysis. A Philips EM400T operated at 120 kV, equipped with a Tracor Northern 2000 multichannel analyzer, was used.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Sign in / Sign up

Export Citation Format

Share Document