Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
J. Mimila-Arroyo ◽  
J.F. Rommeluère ◽  
M. Barbé ◽  
F. Jomard ◽  
A. Tromson-Carli ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Vapor Transport ◽  
Zno Films ◽  
Closed Space ◽  
Free Atmosphere ◽  
Flat Surfaces ◽  
Sapphire Substrates ◽  
Interface Conduction

AbstractThe growth of ZnO films deposited by Closed Space Vapor Transport (CSVT) on sapphire substrates has been investigated. Deposition on R oriented sapphire substrates gives rise to a-(11-20) oriented ZnO films. Under optimised conditions, flat surfaces can be achieved and rocking curves with full half width below 500 arcsec are observed. The electrical properties of the films were studied. Hall measurements reveal that the measured n-carrier concentration decreases linearly upon the thickness of the sample. This is interpreted as interface conduction probably related to diffusion of aluminium from the substrate. On thinnest films, the n-carrier concentration can be dramatically decreased with thermal annealing under oxygen. Furthermore, the effect of this annealing under oxygen is found to be completely reversible after a further thermal annealing under oxygen free atmosphere.

Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

2005 ◽  
Vol 864 ◽  
Author(s):  
Jaime Mimila Arroyo ◽  
Michel Barbé ◽  
François Jomard ◽  
Dominique Ballutaud ◽  
Jacques Chevallier ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Electron Mobility ◽  
Electrical Characteristics ◽  
Deuterium Plasma ◽  
Scattering Centers

AbstractWe have studied the influence of a deuterium diffusion on the electrical characteristics of the 2D gas present in AlGaN/GaN heterostructures. The deuterium diffusion is performed by exposing the structures to a rf remote deuterium plasma. We find that both the sheet carrier concentration and the electron mobility decrease and that these effects are partly reversible under thermal annealing. These results suggest that deuterium behave as acceptors in the 2D gas region. The negatively charged deuterium act as additional scattering centers for electrons.

Dependence of photoluminescence and electrical properties with rapid thermal annealing in nitrogen-implanted ZnO films

2007 ◽  
Vol 515 (17) ◽  
pp. 6927-6930 ◽  
Author(s):  
Veeramuthu Vaithianathan ◽  
Shunichi Hishita ◽  
Jong Ha Moon ◽  
Sang Sub Kim
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zno Films

Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion-plating using direct-current arc discharge

2009 ◽  
Vol 517 (10) ◽  
pp. 3134-3137 ◽  
Author(s):  
Takahiro Yamada ◽  
Aki Miyake ◽  
Hisao Makino ◽  
Naoki Yamamoto ◽  
Tetsuya Yamamoto
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Direct Current ◽  
Arc Discharge ◽  
Zno Films ◽  
Ion Plating ◽  
Doped Zno

Structural Properties of Sputter-Deposited ZnO Thin Films Depending on the Substrate Materials

2005 ◽  
Vol 475-479 ◽  
pp. 1825-1828
Author(s):  
Ju Hyun Myung ◽  
Nam Ho Kim ◽  
Hyoun Woo Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Sapphire Substrates ◽  
Sputter Deposited

We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing for the ZnO films grown on sapphire substrates.

Influence of thermal annealing on optical and electrical properties of ZnO films prepared by electron beam evaporation

2003 ◽  
Vol 18 (6) ◽  
pp. 525-529 ◽  
Author(s):  
N R Aghamalyan ◽  
I A Gambaryan ◽  
E Kh Goulanian ◽  
R K Hovsepyan ◽  
R B Kostanyan ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
Optical And Electrical Properties

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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