Defect Characterization of CdTe Bulk Crystals Doped with Heavy Elements and Rare Earths

2005 ◽  
Vol 864 ◽  
Author(s):  
Svetlana Neretina ◽  
N.V. Sochinskii ◽  
Peter Mascher ◽  
E. Saucedo
Keyword(s):  
Positron Lifetime ◽  
Defect Characterization ◽  
Bulk Crystals ◽  
Rapid Thermal Anneal ◽  
Pump Probe ◽  
Carrier Lifetimes ◽  
Before And After ◽  
Positron Lifetime Spectroscopy ◽  
Co Doped

AbstractThe doping level in Cadmium Telluride (CdTe) is of the utmost importance for many applications. In this work, we have characterized CdTe crystals doped with Tl, Bi, or Yb as well as a crystal co-doped with Ge and Yb. The crystals were characterized using low-temperature Photoluminescence (PL), Positron Lifetime Spectroscopy (PLS), resistivity and a terahertz pump-probe technique that can determine carrier lifetimes. The properties of the crystals were also studied before and after a rapid thermal anneal (RTA) as well as after a longer conventional anneal. The results obtained using the various dopants vary widely. It will be shown, however, that the above mentioned dopants can form complexes with Cd vacancies (vacancy-impurity pairs). As a result, these Cd vacancies can play a key role in determining the resistivity and carrier lifetimes.

Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy

1996 ◽  
Vol 442 ◽  
Author(s):  
J. Mahony ◽  
P. Mascher
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Positron Lifetime ◽  
Defect Characterization ◽  
Lifetime Measurements ◽  
Positron Lifetime Spectroscopy ◽  
Heavily Doped

AbstractPositron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total

Characterization of free volumes in amorphous and nanostructured Pr2Fe14B using positron lifetime spectroscopy

2003 ◽  
Vol 198 (1) ◽  
pp. 204-209
Author(s):  
Y. C. Wu ◽  
F. Ye ◽  
V. Barbe ◽  
W. Sprengel ◽  
K. Reimann ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Positron Lifetime Spectroscopy

Characterization of H-Plasma Treated ZnO Crystals by Positron Annihilation and Atomic Force Microscopy

2012 ◽  
Vol 331 ◽  
pp. 113-125 ◽  
Author(s):  
Jakub Čížek ◽  
I. Procházka ◽  
J. Kuriplach ◽  
W. Anwand ◽  
Gerhard Brauer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Positron Annihilation ◽  
Crystal Surface ◽  
Photon Momentum ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Positron Lifetime Spectroscopy ◽  
Complementary Techniques

Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H-plasma. Defect characterization has been made by two complementary techniques of positron annihilation: positron lifetime spectroscopy and coincidence Doppler broadening. The high-momentum parts of the annihilation photon momentum distribution have been calculated from first principles in order to assist in defect identification. The positron annihilation results are supplemented by Atomic Force Microscopy for characterization of the crystal surface. It was found that virgin ZnO crystal contains Zn-vacancies associated with hydrogen. H-plasma treatment causes a significant reduction in concentration of these complexes. Physical mechanism of this effect is discussed in the paper.

Characterization of the β-Ni(OH)2/β-NiOOH system by positron lifetime spectroscopy

1988 ◽  
Vol 33 (8) ◽  
pp. 1061-1066 ◽  
Author(s):  
K. Süvegh ◽  
T.S. Horanyi ◽  
A. Vertes
Keyword(s):  
Positron Lifetime ◽  
Positron Lifetime Spectroscopy
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