Analytical application of positron lifetime spectroscopy in the characterization of binary solid solutions

1995 ◽  
Vol 198 (1) ◽  
pp. 151-159 ◽  
Author(s):  
A. O. Porto ◽  
W. F. Magalhães ◽  
C. F. Carvalho ◽  
J. C. Machado
2003 ◽  
Vol 198 (1) ◽  
pp. 204-209
Author(s):  
Y. C. Wu ◽  
F. Ye ◽  
V. Barbe ◽  
W. Sprengel ◽  
K. Reimann ◽  
...  

1988 ◽  
Vol 33 (8) ◽  
pp. 1061-1066 ◽  
Author(s):  
K. Süvegh ◽  
T.S. Horanyi ◽  
A. Vertes

1996 ◽  
Vol 442 ◽  
Author(s):  
J. Mahony ◽  
P. Mascher

AbstractPositron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total


2003 ◽  
Vol 198 (1) ◽  
pp. 3-3
Author(s):  
Y. C. Wu ◽  
F. Ye ◽  
V. Barbe ◽  
W. Sprengel ◽  
K. Reimann ◽  
...  

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