C09 Development of a New Positron Lifetime Spectroscopy Technique for Stress and Defect Characterization in Thick Materials

2003 ◽  
Vol 18 (2) ◽  
pp. 179-179
Author(s):  
F. A. Selim ◽  
D. P. Wells ◽  
J. F. Harmon ◽  
J. Kwofie
Keyword(s):  
Positron Lifetime ◽  
Defect Characterization ◽  
Spectroscopy Technique ◽  
Positron Lifetime Spectroscopy

scholarly journals Positron lifetime spectroscopy applied to pure Tellurium

2021 ◽  
Author(s):  
Ricardo Domínguez-Reyes
Keyword(s):  
High Purity ◽  
Positron Lifetime ◽  
Theoretical Calculations ◽  
Positron Annihilation Spectroscopy ◽  
Basic Information ◽  
Spectroscopy Technique ◽  
Experimental Knowledge ◽  
Wide Range ◽  
Positron Lifetime Spectroscopy ◽  
Range Of Values

AbstractHigh-purity crystalline Tellurium has been investigated using positron lifetime spectroscopy technique in order to determine basic information missing in the current experimental knowledge of the positron annihilation spectroscopy field. Three different pairs of samples have been studied in the as-received state and, in order to eliminate the vacancy-type defects, after consecutive isothermal treatments at 300 °C. Lifetime corresponding to the annihilation in the Tellurium bulk has been determined as 282(1) ps. Previous theoretical calculations present in the bibliography that used different methods and parameterization provided a wide range of values for the annihilation lifetime of the positron in the bulk of Tellurium. The obtained result has been used to identify the most accurate results among them.

Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy

1996 ◽  
Vol 442 ◽  
Author(s):  
J. Mahony ◽  
P. Mascher
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Positron Lifetime ◽  
Defect Characterization ◽  
Lifetime Measurements ◽  
Positron Lifetime Spectroscopy ◽  
Heavily Doped

AbstractPositron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total

Defect Characterization of CdTe Bulk Crystals Doped with Heavy Elements and Rare Earths

2005 ◽  
Vol 864 ◽  
Author(s):  
Svetlana Neretina ◽  
N.V. Sochinskii ◽  
Peter Mascher ◽  
E. Saucedo
Keyword(s):  
Positron Lifetime ◽  
Defect Characterization ◽  
Bulk Crystals ◽  
Rapid Thermal Anneal ◽  
Pump Probe ◽  
Carrier Lifetimes ◽  
Before And After ◽  
Positron Lifetime Spectroscopy ◽  
Co Doped

AbstractThe doping level in Cadmium Telluride (CdTe) is of the utmost importance for many applications. In this work, we have characterized CdTe crystals doped with Tl, Bi, or Yb as well as a crystal co-doped with Ge and Yb. The crystals were characterized using low-temperature Photoluminescence (PL), Positron Lifetime Spectroscopy (PLS), resistivity and a terahertz pump-probe technique that can determine carrier lifetimes. The properties of the crystals were also studied before and after a rapid thermal anneal (RTA) as well as after a longer conventional anneal. The results obtained using the various dopants vary widely. It will be shown, however, that the above mentioned dopants can form complexes with Cd vacancies (vacancy-impurity pairs). As a result, these Cd vacancies can play a key role in determining the resistivity and carrier lifetimes.

Point Defect Characterization in CoAl Using Positron Annihilation

1998 ◽  
Vol 552 ◽  
Author(s):  
Werner Puff ◽  
Bernd Logar ◽  
Adam G. Balogh
Keyword(s):  
Point Defect ◽  
Positron Lifetime ◽  
Composition Range ◽  
Defect Characterization ◽  
Doppler Broadening ◽  
Dramatic Decrease ◽  
S Parameter ◽  
Co Concentration ◽  
Long Time ◽  
Positron Lifetime Spectroscopy

ABSTRACTVacancy-like defects in CoAl in the composition range 48.5 at.-% <Cco, < 53 at.-% are investigated by means of positron lifetime spectroscopy and Doppler-broadening measurements. The observed lifetimes in the annealed samples confirm that defects are quenched-in during the production of the samples. The values of the positron lifetime and the S-parameter decrease with increasing Co concentration. After quenching from 1400°C or 1600°C an increase in the positron parameters isobserved. Long-time annealing of the Co-rich sample shows a dramatic decrease of the positron lifetime to the expected bulk lifetime.

Nanometer size pores in ionic liquid loaded silica gel characterized by positron lifetime spectroscopy

2015 ◽  
Vol 213 (1) ◽  
pp. 165-169 ◽  
Author(s):  
Christian Herold ◽  
Hubert Ceeh ◽  
Thomas Gigl ◽  
Markus Reiner ◽  
Marco Haumann ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Silica Gel ◽  
Positron Lifetime ◽  
Nanometer Size ◽  
Positron Lifetime Spectroscopy

Defects in electron irradiated GaP studied by positron lifetime spectroscopy

1995 ◽  
Vol 60 (6) ◽  
pp. 541-544 ◽  
Author(s):  
A. Polity ◽  
Th. Abgarjan ◽  
R. Krause-Rehberg
Keyword(s):  
Positron Lifetime ◽  
Positron Lifetime Spectroscopy

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

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