Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets

2005 ◽  
Vol 864 ◽  
Author(s):  
Homan B. Yuen ◽  
Robert Kudrawiec ◽  
K. Ryczko ◽  
S.R. Bank ◽  
M.A. Wistey ◽  
...  
Keyword(s):  
Theoretical Calculations ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Band Offset ◽  
Dilute Nitride ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Energy Transitions ◽  
Gaas Structure ◽  
Gaas Laser

AbstractHeterojunction band offsets of GaNAsSb/GaAs, GaInNAsSb/GaAs, and GaInNAsSb/GaNAs/GaAs quantum well (QW) structures were measured by photoreflectance (PR) spectroscopy. These samples were grown by solid-source molecular beam epitaxy using a radio-frequency nitrogen plasma source. PR spectra were collected from the QW structures and the energy transitions were obtained. The experimental data of the QW energy transitions were analyzed by theoretical calculations. Using predetermined values such as QW thickness and composition, unknown factors such as the heterojunction band offsets were able to be determined. For the GaN0.02As0.87Sb0.11/GaAs structure, we found that Qc≈0.5. For Ga0.62In0.38N0.026As0.954Sb0.02/GaAs, we found that Qc≈0.8. This value is similar to the antimony free dilute-nitride material GaInNAs since the small amount of antimony does not affect the band offsets. For the technologically important Ga0.61In0.39N0.023As0.957Sb0.02/GaN0.027As0.973/GaAs laser structure, we found that the GaInNAsSb/GaNAs QW had a conduction band offset of 144 meV and a valence band offset of 127 meV. With a greater understanding of the band structure, more advanced GaInNAsSb laser devices can be obtained.

scholarly journals Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. J. Carrington ◽  
M. de la Mare ◽  
K. J. Cheetham ◽  
Q. Zhuang ◽  
A. Krier
Keyword(s):  
Light Emitting Diodes ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Limiting Factors ◽  
Type I ◽  
Dilute Nitride ◽  
Light Emitting ◽  
Thermally Activated ◽  
Bright Emission ◽  
Multiquantum Well

Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

1999 ◽  
Vol 573 ◽  
Author(s):  
T. S. Lay ◽  
M. Hong ◽  
J. Kwo ◽  
J. P. Mannaerts ◽  
W. H. Hung ◽  
...  
Keyword(s):  
Energy Band ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Spectroscopy Analysis ◽  
Valence Band Offset ◽  
Electron Effective Mass ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTWe report the energy band offsets at a Ga2O3(Gd2O3)-GaAs interface. The valence-band offset (ΔEv) is ∼ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-Ga2O3(Gd2O3)-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (ΔEC) ∼ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m*) ∼ 0.29 me of the Ga2O3(Gd2O3) film.

scholarly journals Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4067
Author(s):  
Vitaly Leonidovich Malevich ◽  
Pavel Aliaksandravich Ziaziulia ◽  
Ričardas Norkus ◽  
Vaidas Pačebutas ◽  
Ignas Nevinskas ◽  
...  
Keyword(s):  
Energy Band ◽  
Wide Bandgap ◽  
Semiconductor Heterostructures ◽  
Band Offset ◽  
Terahertz Pulse ◽  
Pulse Emission ◽  
Polarity Inversion ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Narrow Bandgap

Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials. It has been shown that when the photon energy is sufficient enough to excite electrons in the narrower bandgap layer with an energy greater than the conduction band offset, the terahertz pulse changes its polarity. Theoretical analysis performed both analytically and by numerical Monte Carlo simulation has shown that the polarity inversion is caused by the electrons that are excited in the narrow bandgap layer with energies sufficient to surmount the band offset with the wide bandgap substrate. This effect is used to evaluate the energy band offsets in GaInAs/InP and GaInAsBi/InP heterostructures.

Band Offsets In GaN/AlN and AlN/SiC Heterojunctions

1997 ◽  
Vol 482 ◽  
Author(s):  
Nadia Binggeli ◽  
Philippe Ferrara ◽  
Alfonso Baldereschi
Keyword(s):  
Interface Layer ◽  
Band Alignment ◽  
Band Offset ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Bulk Strain ◽  
Minor Influence ◽  
Atomic Relaxation ◽  
Interface Orientation ◽  
A Minor

AbstractWe have investigated the structural trends of the band offsets in GaN/AlN and AlN/SiC heterojunctions using the ab initio pseudopotential method. In the zincblende GaN/AlN (100), (110), and (111) heterojunctions, the band offsets are relatively insensitive to interface orientation. Bulk strain effects, however, can modify the offset by as much as 0.4 eV in coherently strained AlN/GaN and GaN/AlN (100) junctions. The band alignment in the heterovalent AlN/SiC (110) and (111) heterojunctions depends on the geometry and stoichiometry of the interface. Valence band offsets as high as 2.5 eV are obtained for neutral AlN/SiC(11) junctions with a mixed Al/Si interface layer and as low as 1.3 eV with a mixed N/C layer. Atomic relaxation plays a major role in determining the offset. The change from zincblende (111) to wurtzite (0001) crystal structure in GaN/AlN and AlN/SiC heterojunctions selectively affects the conduction band offset, and has only a minor influence on the valence discontinuity.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

scholarly journals Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035312
Author(s):  
Hyojung Kim ◽  
Soonkon Kim ◽  
Jongmin Yoo ◽  
Changyong Oh ◽  
Bosung Kim ◽  
...  
Keyword(s):  
Conduction Band ◽  
Threshold Voltage ◽  
Band Offset ◽  
Positive Bias ◽  
Conduction Band Offset

Effect of Interface States on the Open-Circuit Volatage in a-Si:H/c-Si Heterojunction Solar Cells

2012 ◽  
Vol 485 ◽  
pp. 454-456
Author(s):  
Lan E Luo ◽  
Chun Liang Zhong
Keyword(s):  
Open Circuit Voltage ◽  
Minority Carrier ◽  
Interface States ◽  
Open Circuit ◽  
Band Offset ◽  
Heterojunction Solar Cells ◽  
Conduction Band Offset ◽  
Photovoltaic Application ◽  
Critical Issues ◽  
Recombination Centers

The properties of the a-Si:H/c-Si interface are one of the critical issues for the photovoltaic application. The effects of the interface states on the open-circuit voltage VOC were performed by a set of simulations. VOC decreases with Dit increasing, especially at high values of Dit, since the interface states act as recombination centers to decrease the excess minority carrier density in c-Si. Since the conduction band offset ∆EC can saturate part of interface states, VOC increasing with ∆EC increasing.

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset
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