scholarly journals Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. J. Carrington ◽  
M. de la Mare ◽  
K. J. Cheetham ◽  
Q. Zhuang ◽  
A. Krier
Keyword(s):  
Light Emitting Diodes ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Limiting Factors ◽  
Type I ◽  
Dilute Nitride ◽  
Light Emitting ◽  
Thermally Activated ◽  
Bright Emission ◽  
Multiquantum Well

Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

Growth and Properties of III-V Nitride Films, Quantum Well Structures and Integrated Heterostructure Devices

1995 ◽  
Vol 395 ◽  
Author(s):  
J.F. Schetzina
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Film Growth ◽  
Laser Diodes ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Buffer Layers ◽  
Light Emitting ◽  
Quantum Well Structures

ABSTRACTGrowth of lll-V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an rf nitrogen plasma source. GaN/SiC substrates consisting of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by MOVPE at Cree Research, Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties — comparable to the best GaN films grown by MOVPE—as determined from photoluminescence, x-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p-type and n-type layers, respectively. AlxGa1−xN films (x∼0.06-0.08) and AlxGa1−xN/GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes (LEDs) based on double-heterostructures of AlxGa1−xN/GaN which emit violet light at ∼400 nm have also been demonstrated. Key issues that must be addressed before lll-V nitride laser diodes can be demonstrated and commercialized are discussed. New integrated heterostructures are proposed for the development of a variety of vertical-transport devices such as light-emitting diodes, laser diodes, photocathodes, electron emitters based on the negative-electron-affinity of AIN, and certain transistor structures.

scholarly journals High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maria Vasilopoulou ◽  
Abd. Rashid bin Mohd Yusoff ◽  
Matyas Daboczi ◽  
Julio Conforto ◽  
Anderson Emanuel Ximim Gavim ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
High Mobility ◽  
Organic Light Emitting Diodes ◽  
Triplet Energy ◽  
Material Interface ◽  
Light Emitting ◽  
Thermally Activated ◽  
Organic Light ◽  
Hole Transporting

AbstractBlue organic light-emitting diodes require high triplet interlayer materials, which induce large energetic barriers at the interfaces resulting in high device voltages and reduced efficiencies. Here, we alleviate this issue by designing a low triplet energy hole transporting interlayer with high mobility, combined with an interface exciplex that confines excitons at the emissive layer/electron transporting material interface. As a result, blue thermally activated delay fluorescent organic light-emitting diodes with a below-bandgap turn-on voltage of 2.5 V and an external quantum efficiency (EQE) of 41.2% were successfully fabricated. These devices also showed suppressed efficiency roll-off maintaining an EQE of 34.8% at 1000 cd m−2. Our approach paves the way for further progress through exploring alternative device engineering approaches instead of only focusing on the demanding synthesis of organic compounds with complex structures.

scholarly journals Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ye Yu ◽  
Tao Wang ◽  
Xiufang Chen ◽  
Lidong Zhang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Biaxial Stress ◽  
Organic Chemical ◽  
Graphene Surface ◽  
Light Emitting ◽  
Long Wavelength ◽  
Pre Treatment ◽  
Wavelength Light

AbstractStrain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

Lowest unoccupied molecular orbital managing function of CN-substituted dibenzofuran in high triplet energy hosts for blue thermally-activated delayed fluorescent organic light-emitting diodes

2021 ◽  
Author(s):  
Sung Yong Byun ◽  
Kyung Hyung Lee ◽  
Jun Yeob Lee
Keyword(s):  
Molecular Orbital ◽  
Light Emitting Diodes ◽  
Delayed Fluorescence ◽  
Organic Light Emitting Diodes ◽  
Triplet Energy ◽  
Thermally Activated Delayed Fluorescence ◽  
Light Emitting ◽  
Thermally Activated ◽  
Organic Light ◽  
Lowest Unoccupied Molecular Orbital

The effect of lowest unoccupied molecular orbital (LUMO) management of high triplet energy electron transport type hosts on the device performance of blue thermally-activated delayed fluorescence (TADF) organic light-emitting diodes...

A novel electroplex host with dual triplet exciton up-converting channels suppressing triplet exciton induced degradation mechanisms in blue organic light-emitting diodes

2021 ◽  
Author(s):  
Ju Hui Yun ◽  
Jae-Min Kim ◽  
Won Jae Chung ◽  
Jun Seop Lim ◽  
Jun Yeob Lee ◽  
...  
Keyword(s):  
Electron Transport ◽  
Light Emitting Diodes ◽  
Triplet Exciton ◽  
Organic Light Emitting Diodes ◽  
Degradation Mechanisms ◽  
Light Emitting ◽  
Type Host ◽  
Thermally Activated ◽  
Organic Light ◽  
Transport Type

A novel electroplex host with two triplet exciton up-converting channels for suppressed triplet exciton triggered degradation mechanisms was developed using an electron transport type host (n-type host) with thermally activated...

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