Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

1999 ◽  
Vol 573 ◽  
Author(s):  
T. S. Lay ◽  
M. Hong ◽  
J. Kwo ◽  
J. P. Mannaerts ◽  
W. H. Hung ◽  
...  
Keyword(s):  
Energy Band ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Spectroscopy Analysis ◽  
Valence Band Offset ◽  
Electron Effective Mass ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTWe report the energy band offsets at a Ga2O3(Gd2O3)-GaAs interface. The valence-band offset (ΔEv) is ∼ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-Ga2O3(Gd2O3)-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (ΔEC) ∼ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m*) ∼ 0.29 me of the Ga2O3(Gd2O3) film.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

scholarly journals Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4067
Author(s):  
Vitaly Leonidovich Malevich ◽  
Pavel Aliaksandravich Ziaziulia ◽  
Ričardas Norkus ◽  
Vaidas Pačebutas ◽  
Ignas Nevinskas ◽  
...  
Keyword(s):  
Energy Band ◽  
Wide Bandgap ◽  
Semiconductor Heterostructures ◽  
Band Offset ◽  
Terahertz Pulse ◽  
Pulse Emission ◽  
Polarity Inversion ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Narrow Bandgap

Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials. It has been shown that when the photon energy is sufficient enough to excite electrons in the narrower bandgap layer with an energy greater than the conduction band offset, the terahertz pulse changes its polarity. Theoretical analysis performed both analytically and by numerical Monte Carlo simulation has shown that the polarity inversion is caused by the electrons that are excited in the narrow bandgap layer with energies sufficient to surmount the band offset with the wide bandgap substrate. This effect is used to evaluate the energy band offsets in GaInAs/InP and GaInAsBi/InP heterostructures.

Chemical Composition and Electronic Properties of CuInS2/Zn(S,O) Interfaces

2009 ◽  
Vol 1165 ◽  
Author(s):  
Rodrigo Sáez-Araoz ◽  
Iver Lauermann ◽  
Axel Neisser ◽  
Martha Ch Lux-Steiner ◽  
Ahmed Ennaoui
Keyword(s):  
Chemical Composition ◽  
Band Gap ◽  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Energy Band ◽  
Band Offset ◽  
Energy Band Gap ◽  
Valence Band Offset ◽  
X Ray ◽  
Conduction Band Offset

AbstractWe report on the chemical deposition and electronic properties of CuInS2/Zn(S,O) interfaces. The Zn(S,O) buffer was grown by a new chemical bath deposition (CBD) process that allows the tailoring of the S/O ratio in the films. Resulting Zn(S,O) films exhibit transparencies above 80% (for λ>390 nm) and an optical energy band gap of 3.9 eV which decreases to 3.6 eV after annealing in air at 200°C. Production line CuInS2 (CIS) absorbers provided by Sulfurcell Solartechnik GmbH are used as substrates for the investigation of the CIS/Zn(S,O) interface and the chemical composition of Zn(S,O). A ZnS/(ZnS+ZnO) ratio of 0.5 is found by X-ray photoelectron spectroscopy and X-ray excited Auger electron spectroscopy (XPS and XAES). The valence band offset between the heterojunction partners (ΔEV = 1.8 ± 0.2 eV) has been determined by means of XPS and ultraviolet photoelectron spectroscopy (UPS). Considering the energy band gap of the CIS absorber and the measured band gap of Zn(S,O), the conduction band offset (ΔEC) is calculated as: resulting in a spike of 0.5±0.3 eV in the conduction band at the heterojunction before annealing. After the heat treatment, the valence band offset is reduced to 1.5±0.2 eV and the calculated conduction band offset remains at 0.5±0.3 eV.

Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets

2005 ◽  
Vol 864 ◽  
Author(s):  
Homan B. Yuen ◽  
Robert Kudrawiec ◽  
K. Ryczko ◽  
S.R. Bank ◽  
M.A. Wistey ◽  
...  
Keyword(s):  
Theoretical Calculations ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Band Offset ◽  
Dilute Nitride ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Energy Transitions ◽  
Gaas Structure ◽  
Gaas Laser

AbstractHeterojunction band offsets of GaNAsSb/GaAs, GaInNAsSb/GaAs, and GaInNAsSb/GaNAs/GaAs quantum well (QW) structures were measured by photoreflectance (PR) spectroscopy. These samples were grown by solid-source molecular beam epitaxy using a radio-frequency nitrogen plasma source. PR spectra were collected from the QW structures and the energy transitions were obtained. The experimental data of the QW energy transitions were analyzed by theoretical calculations. Using predetermined values such as QW thickness and composition, unknown factors such as the heterojunction band offsets were able to be determined. For the GaN0.02As0.87Sb0.11/GaAs structure, we found that Qc≈0.5. For Ga0.62In0.38N0.026As0.954Sb0.02/GaAs, we found that Qc≈0.8. This value is similar to the antimony free dilute-nitride material GaInNAs since the small amount of antimony does not affect the band offsets. For the technologically important Ga0.61In0.39N0.023As0.957Sb0.02/GaN0.027As0.973/GaAs laser structure, we found that the GaInNAsSb/GaNAs QW had a conduction band offset of 144 meV and a valence band offset of 127 meV. With a greater understanding of the band structure, more advanced GaInNAsSb laser devices can be obtained.

Contactless electroreflectance of GaNyAs1−y/GaAs multi quantum wells: The conduction band offset and electron effective mass issues

2006 ◽  
Vol 138 (7) ◽  
pp. 365-370 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Offset ◽  
Electron Effective Mass ◽  
Conduction Band Offset

CONSTRUCTION OF SnO2/SiO2/Si HETEROJUNCTION AND ITS LINEUP USING I–V AND C–V MEASUREMENTS

2011 ◽  
Vol 25 (29) ◽  
pp. 3863-3869 ◽  
Author(s):  
EVAN T. SALEM ◽  
IBRAHIM R. AGOOL ◽  
MARWA A. HASSAN
Keyword(s):  
Experimental Data ◽  
Thermal Evaporation ◽  
Energy Band Diagram ◽  
Metal Films ◽  
Band Offset ◽  
Band Diagram ◽  
Thermal Evaporation Technique ◽  
Valence Band Offset ◽  
Conduction Band Offset ◽  
Evaporation Technique

Near-ideal n- SnO 2/n- Si heterojunction band edge lineup has been investigated with aid of I–V and C–V measurements. The heterojunction was manufactured by rapid thermal oxidation of Sn metal films prepared by thermal evaporation technique on monocrystalline n-type silicon. The experimental data of the conduction band offset ΔEc and valence band offset ΔEc were compared with theoretical values. The band offset ΔEc = 0.55 eV and ΔEv = 1.8 eV obtained at 300 K. The energy band diagram of n- SnO 2/n- Si HJ was constructed. C–V measurements depict that the junction was an abrupt type and the built-in voltage was determined from 1/C2–V plot.

Study of Nonlinear Current-Voltage Characteristic of Semiconductor Ceramic by the Method of Tilted Energy Band

2014 ◽  
Vol 941-944 ◽  
pp. 547-550
Author(s):  
Chao Fang ◽  
Liang Yan Chen
Keyword(s):  
Grain Size ◽  
Energy Band ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Non Linear ◽  
Semiconducting Ceramics ◽  
Current Voltage Characteristics ◽  
Effective Carrier ◽  
Grain Boundary Barrier

A analytic method for the calculation of the electrical characteristics of semiconducting ceramics is suggested. This paper put forward the concept of effective carrier concentration. Electrical characteristics under extra electric field have been calculated by the method of tilted energy band. The non-linear current-voltage characteristics with different grain sizes has been obtained. The results pointed out that the current-voltage characteristics divide into three regions: Linear region before breakdown field, nonlinear region near breakdown field and upturn region after breakdown field; The grain boundary barrier leads to the strong non-linear characteristics, which has nothing to do with the grain size. With the grain size decreasing, the breakdown field increases. The results are compared with experimental data.

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

2009 ◽  
Vol 615-617 ◽  
pp. 557-560 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Mos Capacitors ◽  
Conduction Band Offset ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Mos Gate

The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.

CONSTRUCTION OF ANISOTYPE CdS/Si HETEROJUNCTION AND LINEUP USING I–V AND C–V MEASUREMENTS

2006 ◽  
Vol 20 (28) ◽  
pp. 1833-1838 ◽  
Author(s):  
RAID A. ISMAIL ◽  
ABDUL-MAJEED E. AL-SAMARAI ◽  
OMAR A. ABDULRAZAQ
Keyword(s):  
Spray Pyrolysis Technique ◽  
Energy Band Diagram ◽  
Chemical Spray Pyrolysis ◽  
Band Offset ◽  
Band Diagram ◽  
Valence Band Offset ◽  
Conduction Band Offset ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray ◽  
First Time

Near-ideal p-CdS/n-Si heterojunction (HJ) band edge lineup has been investigated for the first time with the aid of I–V and C–V measurements. The heterojunction was obtained by the deposition of CdS films prepared by chemical spray pyrolysis technique (CSP), on the monocrystalline n-type silicon. The experimental data of the conduction band offset, ΔEc and the valence band offset, ΔEc were compared with theoretical values. The band offsets ΔEc=530 meV and ΔEv=770 meV were obtained at 300 K. The energy band diagram of p-CdS/n-Si HJ was constructed. The C–V measurements depicted that the junction was an abrupt type and the built-in voltage was determined from the C-2–V plot.

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