Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition

2012 ◽  
Vol 1 (3) ◽  
pp. N45-N48 ◽  
Author(s):  
Yang Geng ◽  
Zhang-Yi Xie ◽  
Sai-Sheng Xu ◽  
Qing-Qing Sun ◽  
Shi-Jin Ding ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition

2013 ◽  
Vol 577 ◽  
pp. 340-344 ◽  
Author(s):  
Shang-Bin Zhu ◽  
Yang Geng ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

scholarly journals Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing

2011 ◽  
Vol 519 (16) ◽  
pp. 5558-5561 ◽  
Author(s):  
Yung-Chen Cheng ◽  
Ying-Shen Kuo ◽  
Yun-Hsiu Li ◽  
Jing-Jong Shyue ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Gaas Substrates ◽  
Layer Deposition ◽  
P Type ◽  
Post Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow

2015 ◽  
Vol 165 ◽  
pp. 245-252 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
San-Yuan Chen ◽  
Hsin-Yi Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
Interrupted Flow
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