Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Brüggemann ◽  
M. Rösch ◽  
S. Tardon ◽  
G.H. Bauer
Keyword(s):  
Amorphous Silicon ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Device Modeling ◽  
Interface Defects ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes

AbstractWe apply the publicly available device modeling tool SC-Simul for simulating experiments with user-defined heterojunction diodes to discuss the role of the electric field in solar cells. For amorphous silicon/crystalline silicon heterodiodes, the role of interface defects, an amorphous silicon buffer layer and low-cost crystalline silicon is studied by simulation of current-voltage characteristics and photoluminescence. Photoluminescence is sensitive to the minority carrier density in the volume of the device and can be used to monitor minority carrier properties in these diodes.

Capacitance Spectroscopy of Defects in a-SI:H/c-SI Heterostructures

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Rösch ◽  
T. Unold ◽  
R. Pointmayer ◽  
G.H. Bauer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Clear Correlation ◽  
Temperature Dependent ◽  
Capacitance Measurements ◽  
Interface Defects ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Capacitance Spectroscopy ◽  
Hydrogenated Amorphous

AbstractWe investigate defects at the interface in heterodiodes of hydrogenated amorphous silicon and monocrystalline silicon by frequency and temperature dependent capacitance measurements. The interpretation of the experimental results is supported by numerical simulations of capacitance experiments via transient calculations of defect charging and decharging in the diodes. A defined variation of waver surface treatments prior to amorphous silicon deposition shows a clear correlation of interface defects determined by capacitance measurements with current-voltage characteristics.

Effect of WO3 Doping on Microstructural and Electrical Properties of ZnO-Pr6O11 Based Varistor Materials

2013 ◽  
Vol 591 ◽  
pp. 54-60
Author(s):  
Xiu Li Fu ◽  
Yan Xu Zang ◽  
Zhi Jian Peng
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Grain Growth ◽  
Doping Level ◽  
Nonlinear Coefficient ◽  
Current Voltage ◽  
Average Grain Size ◽  
Current Voltage Characteristics ◽  
Voltage Performance

The effect of WO3doping on microstructural and electrical properties of ZnO-Pr6O11based varistor materials was investigated. The doped WO3plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO3from 0 to 0.5 mol%. When the doping level of WO3was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO3doped. But when the doping level of WO3became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO3was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm2, respectively, when the doping level of WO3was in the range from 0.03 to 0.05 mol%.

The Influence of the Magnetic Field on the Current-Voltage Characteristics of CuPc Nanowires

2019 ◽  
Vol 970 ◽  
pp. 75-81
Author(s):  
Alexey Zavgorodniy ◽  
Aitbek Aimukhanov ◽  
Assylbek Zeinidenov ◽  
Galina Vavilova
Keyword(s):  
Magnetic Field ◽  
Carrier Transport ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Photosensitive Cell ◽  
Positively Charged

The role of spin states in the process of charge carrier transport in copper phthalocyanine (CuPc) nanowires has been established. According to the data obtained, CuPc nanowires are in the η-phase. The current-voltage characteristics (IVC) of a photosensitive cell based on CuPc nanowires in a magnetic field are investigated. As a result of experiments, it was found that applying an external magnetic field, the spins of two positively charged polarons are oriented in one direction. The channel of formation of the bipolaron is blocked. As a result, a decrease in the short-circuit current of the photosensitive cell is observed by more than 61%.

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

2016 ◽  
Vol 121 ◽  
pp. 41-46 ◽  
Author(s):  
Tigran T. Mnatsakanov ◽  
Michael E. Levinshtein ◽  
Alexey G. Tandoev ◽  
Sergey N. Yurkov ◽  
John W. Palmour
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

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