Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

2018 ◽  
Vol 123 (16) ◽  
pp. 161549 ◽  
Author(s):  
Yasuhisa Omura ◽  
Yoshiaki Mori ◽  
Shingo Sato ◽  
Abhijit Mallik
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Process ◽  
Current Voltage ◽  
Trap Assisted Tunneling ◽  
Current Voltage Characteristics ◽  
Assisted Tunneling

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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