Micro-crystalline silicon-germanium thin films prepared by the multi-target RF sputtering system

2005 ◽  
Vol 862 ◽  
Author(s):  
Toru Ajiki ◽  
Isao Nakamura ◽  
Masao Isomura
Keyword(s):  
Crystallization Temperature ◽  
Silicon Germanium ◽  
Crystalline Silicon ◽  
Rf Sputtering ◽  
Dark Conductivity ◽  
Dangling Bond ◽  
Intrinsic Nature ◽  
Energy Gaps ◽  
Order Of Magnitude ◽  
Sputtering System

AbstractMicro-crystalline silicon-germanium (μc-SiGe) films were prepared by the multi-target RF sputtering system using Ar and Ar-H2 mixture gases. The crystallization temperature of Si0.3Ge0.7 films is reduced from 600 °C to 400 °C by the introduction of H2 into the sputtering gases. The dark conductivity of 1.7x10-7 S/cm and one order of magnitude of photosensitivity are obtained with the H2/Ar flow ratio of 2. The activation energy of dark conductivity is 0.42 eV, which is a half of the energy gaps of Si0.3Ge0.7, and show that the films have intrinsic nature. Besides, the absorption coefficients are similar to those of single crystalline Si0.3Ge0.7. The results suggest that the H2 introduction is effective both to reduce the dangling bond defects and to decrease the crystallization temperature of the μc-SiGe films.

Investigations of Tail and Defect States in a-Si0.6Ge0.4:H Alloys by PDS and ESR - Implications for the Interaction of Weak and Dangling Bonds

1995 ◽  
Vol 377 ◽  
Author(s):  
Tilo P. Drüsedau ◽  
Andreas N. Panckow ◽  
Bernd Schröder
Keyword(s):  
Silicon Germanium ◽  
Defect Density ◽  
State Density ◽  
Model Parameters ◽  
Defect States ◽  
Conversion Model ◽  
Order Of Magnitude ◽  
Underlying Mechanisms ◽  
Amorphous Silicon Germanium ◽  
Excess Absorption

ABSTRACTInvestigations on the gap state density were performed on a variety of samples of hydrogenated amorphous silicon germanium alloys (Ge fraction around 40 at%) containing different amounts of hydrogen. From subgap absorption measurements the values of the “integrated excess absorption” and the “defect absorption” were determined. Using a calibration constant, which is well established for the determination of the defect density from the integrated excess absorption of a-Si:H and a-Ge:H, it was found that the defect density is underestimated by nearly one order of magnitude. The underlying mechanisms for this discrepancy are discussed. The calibration constants for the present alloys are determined to 8.3×1016 eV−1 cnr2 and 1.7×1016 cm−2 for the excess and defect absorption, respectively. The defect density of the films was found to depend on the Urbach energy according to the law derived from Stutzmann's dangling bond - weak bond conversion model for a-Si:H. However, the model parameters - the density of states at the onset of the exponential tails N*=27×1020 eV−1 cm−3 and the position of the demarcation energy Edb-E*=0.1 eV are considerably smaller than in a-Si:H.

High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Infrared Sensors ◽  
Amorphous Silicon Germanium

Simultaneous Relaxation of Network and Defects in Silicon-Implanted a-Si:H

1995 ◽  
Vol 377 ◽  
Author(s):  
J. Nakata ◽  
S. Sherman ◽  
S. Wagner ◽  
P. A. Stolk ◽  
J. M. Poate
Keyword(s):  
Electronic Transport ◽  
Annealing Temperature ◽  
Urbach Energy ◽  
Defect Density ◽  
Dark Conductivity ◽  
Equilibrium Theory ◽  
Hopping Conduction ◽  
Dangling Bond ◽  
Bond Density ◽  
Additional Illumination

ABSTRACTWe report extensive optical and electronic transport data on silicon-implanted a-Si:H, annealed in steps in the dark or with additional illumination. All measured properties relax gradually with increasing annealing temperature. The dark conductivity of the as-implanted film is dominated by hopping conduction via midgap defects. This channel is pinched off during the initial stages of annealing. The midgap defect density and the Urbach energy follow an annealing path that agrees qualitatively with the trajectory postulated by the equilibrium theory of the dangling-bond density. Therefore, the silicon network and the defect density equilibrate continuously during network relaxation.

scholarly journals Индий-индуцированная кристаллизация тонких пленок аморфного субоксида кремния

2020 ◽  
Vol 46 (12) ◽  
pp. 14
Author(s):  
А.О. Замчий ◽  
Е.А. Баранов ◽  
И.Е. Меркулова ◽  
Н.А. Лунев ◽  
В.А. Володин ◽  
...  
Keyword(s):  
Crystallization Temperature ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Stoichiometric Coefficient ◽  
Free Standing ◽  
Solid Phase Crystallization ◽  
Silicon Suboxide ◽  
Induced Crystallization

A novel fabrication method of polycrystalline silicon by indium-induced crystallization (InIC) of amorphous silicon suboxide thin films with a stoichiometric coefficient of 0.5 (a-SiO0.5) is proposed. It was shown that the use of indium in the annealing process of a SiO0.5 allowed to decrease the crystallization temperature to 600°С which was significantly lower than the solid-phase crystallization temperature of the material - 850°С. As a result of the high-vacuum InIC of a-SiO0.5, the formation of free-standing micron-sized crystalline silicon particles took place.

scholarly journals Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

2014 ◽  
Vol 105 (2) ◽  
pp. 022108 ◽  
Author(s):  
S. Steffens ◽  
C. Becker ◽  
D. Amkreutz ◽  
A. Klossek ◽  
M. Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Electrical Performance ◽  
Dangling Bond ◽  
Silicon Thin Films

The Effect of Ar/O2 Ratio on Electrochromic Response Time of Ni Oxides Grown Using an RF Sputtering System

2002 ◽  
Vol 41 (Part 2, No. 2B) ◽  
pp. L212-L215 ◽  
Author(s):  
Kwang-Soon Ahn ◽  
Yoon-Chae Nah ◽  
Jun-Ho Yum ◽  
Yung-Eun Sung
Keyword(s):  
Response Time ◽  
Rf Sputtering ◽  
Sputtering System

scholarly journals Control of interfacial layer growth during deposition of high-κ oxide thin films in reactive RF-sputtering system

2017 ◽  
Vol 423 ◽  
pp. 957-960
Author(s):  
Abhishek Rakshit ◽  
Arijit Bose ◽  
Debaleen Biswas ◽  
Madhusudan Roy ◽  
Radhaballabh Bhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Rf Sputtering ◽  
Layer Growth ◽  
Oxide Thin Films ◽  
Sputtering System

A Comparative Study of Hydrogenated Amorphous Silicon Films Prepared by RF Sputtering in He/H2, Ar/H2 and Xe/H2 Mixtures

1986 ◽  
Vol 70 ◽  
Author(s):  
Mark L. Albers ◽  
H. R. Shanks ◽  
J. Shinar
Keyword(s):  
Comparative Study ◽  
Energy Gap ◽  
Rf Sputtering ◽  
Dangling Bond ◽  
Rf Power ◽  
Optical Energy Gap ◽  
Sputtered Films ◽  
Optical Gap ◽  
Hydrogenated Amorphous ◽  
Spin Densities

ABSTRACTPreliminary results of a comparative study of some optical and ESR properties of aSi:H films prepared by rf sputtering on a cold substrate in 10 mtorr of either He, Ar, or Xe and 0.5 mtorr H2 are presented. In all cases the concentration of Si-H and Si-H2 bonds, the optical gap and the dangling bond spin density all generally increase as the rf power is decreased from 3.3 to 0.27 W/cm2. However, whereas the optical energy gap of He/H2 sputtered films ranges from 1.26 eV to 2.13 eV, the gap of Ar/H2 and Xe/H2 films sputtered under these conditions only changes from 1.54 to 1.94 and 1.41 to 1.71 eV, respectively. The dangling bond spin densities are lowest (~1017 cm-3) in the Ar/H2 sputtered films at high rf power and highest (~5x1018 cm-3) in Xe/H2 sputtered films at low power.

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