Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
D. Fuhrmann ◽  
T. Retzlaff ◽  
U. Rossow ◽  
A. Hangleiter
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Excitation Power ◽  
Ultraviolet Region ◽  
Nonradiative Recombination ◽  
Power Dependence ◽  
Recombination Mechanism ◽  
Quantum Well Structures ◽  
Internal Efficiency

ABSTRACTTo date, light emission by AlGaN-based heterostructures and LED's operating in the ultraviolet region is far less efficient than emission from longer wavelength structures based on GaInN. We have realized GaN/AlGaN quantum well structures emitting in the 360–320 nm range with peak room-temperature internal efficiencies reaching more than 20 %. From detailed studies of the temperature and excitation power dependence of the efficiency we find that excitons play a crucial role enhancing radiative recombination in such structures. Except for the peak internal efficiency, which reaches 73 % in GaInN/GaN, the overall behavior in GaN/AlGaN and GaInN/GaN is very similar, suggesting that the main difference is the nonradiative recombination mechanism.

scholarly journals The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 1006
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Single Mode ◽  
Group Iv ◽  
Light Power ◽  
Fully Integrated ◽  
Electronic And Optical Properties ◽  
Novel Approach

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.

Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

2004 ◽  
Vol 831 ◽  
Author(s):  
Barbara Neubert ◽  
Frank Habel ◽  
Peter Bruckner ◽  
Ferdinand Scholz ◽  
Till Riemann ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Low Pressure ◽  
Lower Efficiency ◽  
Strong Light ◽  
The Common ◽  
Piezo Electric

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

scholarly journals Superfluorescence from photoexcited semiconductor quantum wells: Magnetic field, temperature, and excitation power dependence

2015 ◽  
Vol 91 (23) ◽  
Author(s):  
Kankan Cong ◽  
Yongrui Wang ◽  
Ji-Hee Kim ◽  
G. Timothy Noe ◽  
Stephen A. McGill ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Excitation Power ◽  
Power Dependence ◽  
Semiconductor Quantum Wells ◽  
Field Temperature

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

2007 ◽  
Vol 90 (7) ◽  
pp. 071903 ◽  
Author(s):  
Shunfeng Li ◽  
Jörg Schörmann ◽  
Donat J. As ◽  
Klaus Lischka
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

scholarly journals Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells

1996 ◽  
Vol 1 ◽  
Author(s):  
Jin Seo Im ◽  
Volker Härle ◽  
Ferdinand Scholz ◽  
Andreas Hangleiter
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Decay Time ◽  
Elevated Temperatures ◽  
Radiative Lifetime ◽  
Thermal Dissociation ◽  
Interface Roughness ◽  
Nonradiative Recombination ◽  
Quantum Well Structures ◽  
Decay Times

We have studied GaInN/GaN quantum well structures grown by LP-MOVPE by picosecond time-resolved photoluminescence spectroscopy. For the quantum wells we find rather long PL decay times of up to 600 ps at low temperature. At temperatures higher than about 100 K, the decay time decreases rapidly, reaching about 75 ps at room temperature. From measurements of the integrated PL intensity, we conclude that this decrease of the decay time is due to nonradiative recombination processes. By combining our data for the lifetime and the intensity, we derive the radiative lifetime, which is constant at low temperature and increases at elevated temperatures. We explain this behavior on the basis of the interface roughness at low temperature and thermal dissociation of excitons at higher temperatures.

DYNAMICS OF SPATIALLY INDIRECT EXCITONS IN SEMICONDUCTOR HETEROSTRUCTURES IN MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1574-1578
Author(s):  
KAZUHITO UCHIDA ◽  
NOBORU MIURA ◽  
YASUHIRO SHIRAKI
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Excitation Power ◽  
Semiconductor Heterostructures ◽  
Type Ii ◽  
Power Dependence ◽  
Indirect Excitons ◽  
Peak Energy ◽  
Excitation Laser ◽  
The Magnetic Field

Magnetophotoluminescence from spatially separated excitons in type-II semiconductor heterostructures, GaP/AlP neighboring confinement structures (NCSs) have been investigated. The sample studied consists of adjacent GaP and AlP quantum wells sandwiched between AlGaP barriers. The excitation power dependence and the well thickness dependence of the exciton PL are studied in magnetic fields applied perpendicular to the heterointerfaces. Compared to the thinner NCS, the magneto-PL of the wider NCS is strongly modified by the excitation power; the magnetic field dependence of the PL peak energy clearly changes from the anomalous red-shifts into the diamagnetic shifts with increasing excitation laser power.

Optical evaluation of pretreated InGaN quantum well structures

2003 ◽  
Vol 798 ◽  
Author(s):  
T. Böttcher ◽  
F. Bertram ◽  
P. Bergman ◽  
A. Ueta ◽  
J. Christen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Room Temperature ◽  
Growth Direction ◽  
Wetting Layer ◽  
Quantum Well Structures ◽  
Room Temperature Photoluminescence ◽  
Decay Times ◽  
Wavelength Distribution ◽  
Ingan Quantum Wells

ABSTRACTIn order to optimize the quantum efficiency of InGaN quantum wells, different MOVPE growth sequences are compared using photo- and electroluminescence. In one study, the surface was pretreated with trimethylindium (TMIn) prior to the well deposition. In another study, growth interruptions were performed after the quantum well deposition to desorb segregated indium. In both cases, the room-temperature photoluminescence (PL) intensity is strongly enhanced. For the samples grown with TMIn preflow the wavelength distribution in low-temperature cathodoluminescence (CL) wavelength mappings is narrowed, which can be attributed to more homogeneous quantum wells. Furthermore, the decay times of the radiative recombination increase both at RT and 2K. A reason for this could be an improved indium profile along the growth direction or a more homogeneous In wetting layer due to the pre-wetted surface.

scholarly journals Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

2016 ◽  
Vol 13 (5-6) ◽  
pp. 248-251 ◽  
Author(s):  
George M. Christian ◽  
Simon Hammersley ◽  
Matthew J. Davies ◽  
Philip Dawson ◽  
Menno J. Kappers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Room Temperature ◽  
Quantum Well Structures

Room-Temperature Broadband Light Emission from Hybrid Lead Iodide Perovskite-Like Quantum Wells: Terahertz Spectroscopic Investigation of Metastable Defects

2019 ◽  
Vol 10 (8) ◽  
pp. 1653-1662 ◽  
Author(s):  
Adedayo M. Sanni ◽  
Sydney N. Lavan ◽  
Aleksandr Avramenko ◽  
Federico A. Rabuffetti ◽  
Leopoldo Suescun ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectroscopic Investigation ◽  
Room Temperature ◽  
Light Emission ◽  
Lead Iodide

ZnS/Si/ZnS Quantum Well Structures for Visible Light Emission

1995 ◽  
Vol 405 ◽  
Author(s):  
Eric Bretschneider ◽  
Albert Davydov ◽  
Clint McCreary ◽  
Li Wang ◽  
Timothy J. Anderson ◽  
...  
Keyword(s):  
Visible Light ◽  
Quantum Wells ◽  
Near Infrared ◽  
Light Emission ◽  
Band Edge Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Hole Trapping ◽  
Si Quantum Dots ◽  
Visible Light Emission

AbstractSilicon multiple quantum wells confined by ZnS barriers have been grown by MOCVD. Calculations indicate that well widths must be less than 15Å for visible light emission, basically independent of the band offsets. No near-infrared photoluminescence (except bulk Si band-edge emission) was observed from samples with 70Å or greater Si layers, using stimulation at 325 nm with a He-Cd laser; hole trapping in ZnS may play a role. However, we found evidence of yellow light emission from samples which possibly contain Si quantum dots embedded in ZnS.

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