Room-Temperature Broadband Light Emission from Hybrid Lead Iodide Perovskite-Like Quantum Wells: Terahertz Spectroscopic Investigation of Metastable Defects

2019 ◽  
Vol 10 (8) ◽  
pp. 1653-1662 ◽  
Author(s):  
Adedayo M. Sanni ◽  
Sydney N. Lavan ◽  
Aleksandr Avramenko ◽  
Federico A. Rabuffetti ◽  
Leopoldo Suescun ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectroscopic Investigation ◽  
Room Temperature ◽  
Light Emission ◽  
Lead Iodide

scholarly journals The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 1006
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Single Mode ◽  
Group Iv ◽  
Light Power ◽  
Fully Integrated ◽  
Electronic And Optical Properties ◽  
Novel Approach

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.

Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

2004 ◽  
Vol 831 ◽  
Author(s):  
Barbara Neubert ◽  
Frank Habel ◽  
Peter Bruckner ◽  
Ferdinand Scholz ◽  
Till Riemann ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Low Pressure ◽  
Lower Efficiency ◽  
Strong Light ◽  
The Common ◽  
Piezo Electric

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

2007 ◽  
Vol 90 (7) ◽  
pp. 071903 ◽  
Author(s):  
Shunfeng Li ◽  
Jörg Schörmann ◽  
Donat J. As ◽  
Klaus Lischka
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
D. Fuhrmann ◽  
T. Retzlaff ◽  
U. Rossow ◽  
A. Hangleiter
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Excitation Power ◽  
Ultraviolet Region ◽  
Nonradiative Recombination ◽  
Power Dependence ◽  
Recombination Mechanism ◽  
Quantum Well Structures ◽  
Internal Efficiency

ABSTRACTTo date, light emission by AlGaN-based heterostructures and LED's operating in the ultraviolet region is far less efficient than emission from longer wavelength structures based on GaInN. We have realized GaN/AlGaN quantum well structures emitting in the 360–320 nm range with peak room-temperature internal efficiencies reaching more than 20 %. From detailed studies of the temperature and excitation power dependence of the efficiency we find that excitons play a crucial role enhancing radiative recombination in such structures. Except for the peak internal efficiency, which reaches 73 % in GaInN/GaN, the overall behavior in GaN/AlGaN and GaInN/GaN is very similar, suggesting that the main difference is the nonradiative recombination mechanism.

scholarly journals Kinetic Molecular Cationic Control of Defect-Induced Broadband Light Emission in 2D Hybrid Lead Iodide Perovskites

2020 ◽  
Author(s):  
Adedayo M. Sanni ◽  
Aaron Rury
Keyword(s):  
Quantum Wells ◽  
Self Assembly ◽  
Light Emission ◽  
Spectroscopic Studies ◽  
Inorganic Materials ◽  
Lead Iodide ◽  
X Ray ◽  
Pl Spectra ◽  
Defect Sites ◽  
Self Assembled

In this study we examine the effects of changing organic cation concentrations on the efficiency and photophysical implications of exciton trapping in 2-dimensional hybrid lead iodide self-assembled quantum wells (SAQWs). We show increasing the concentration of alkyl and aryl ammonium cations causes the formation of SAQWs at a liquid-liquid interface to possess intense, broadband subgap photoluminescence (PL) spectra. Electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopic studies suggest materials formed under these cation concentrations possess morphologies consistent with inhibited crystallization kinetics, but exhibit qualitatively similar bulk chemical bonding to non-luminescent materials stabilized in the same structure from precursor solutions containing lower cation concentrations. Temperature and power-dependent PL spectra suggest the broadband subgap light emission stems from excitons self-trapped at defect sites, which we assign as edge-like, collective iodide vacancies using a simple model of the chemical equilibrium driving material self-assembly. These results suggest changes to the availability of molecular cations can suitably control the light emission properties of self-assembled hybrid organic-inorganic materials in ways central to their applicability in lighting technologies.

Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Sergey Nikishin ◽  
Boris Borisov ◽  
Vladimir Kuryatkov ◽  
Mark Holtz ◽  
Henryk Temkin
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Uv Light ◽  
Growth Mode ◽  
Light Emitting ◽  
Gas Source ◽  
Luminescence Efficiency ◽  
Short Period ◽  
Short Period Superlattices

AbstractWe report the results of two studies of the growth and physical properties of AlGaN-based short-period superlattices (SPSLs), each aimed at improving light emission. In the first experiment, we grow structures on bulk AlN substrates. We observe ∼ 3 times higher luminescence efficiency than identically grown structures on sapphire. In the second experiment, we grow structures on sapphire while controlling the growth mode. We observe a significant improvement in the room temperature cathodoluminescence efficiency (at least by factor of 10) of AlGaN quantum wells when the 3D growth mode is induced by reduced flux of ammonia over identically prepared structures grown in the 2D mode.

scholarly journals Kinetic Molecular Cationic Control of Defect-Induced Broadband Light Emission in 2D Hybrid Lead Iodide Perovskites

2020 ◽  
Author(s):  
Adedayo M. Sanni ◽  
Aaron Rury
Keyword(s):  
Quantum Wells ◽  
Self Assembly ◽  
Light Emission ◽  
Spectroscopic Studies ◽  
Inorganic Materials ◽  
Lead Iodide ◽  
X Ray ◽  
Pl Spectra ◽  
Defect Sites ◽  
Self Assembled

In this study we examine the effects of changing organic cation concentrations on the efficiency and photophysical implications of exciton trapping in 2-dimensional hybrid lead iodide self-assembled quantum wells (SAQWs). We show increasing the concentration of alkyl and aryl ammonium cations causes the formation of SAQWs at a liquid-liquid interface to possess intense, broadband subgap photoluminescence (PL) spectra. Electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopic studies suggest materials formed under these cation concentrations possess morphologies consistent with inhibited crystallization kinetics, but exhibit qualitatively similar bulk chemical bonding to non-luminescent materials stabilized in the same structure from precursor solutions containing lower cation concentrations. Temperature and power-dependent PL spectra suggest the broadband subgap light emission stems from excitons self-trapped at defect sites, which we assign as edge-like, collective iodide vacancies using a simple model of the chemical equilibrium driving material self-assembly. These results suggest changes to the availability of molecular cations can suitably control the light emission properties of self-assembled hybrid organic-inorganic materials in ways central to their applicability in lighting technologies.

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold
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