ZnS/Si/ZnS Quantum Well Structures for Visible Light Emission

1995 ◽  
Vol 405 ◽  
Author(s):  
Eric Bretschneider ◽  
Albert Davydov ◽  
Clint McCreary ◽  
Li Wang ◽  
Timothy J. Anderson ◽  
...  
Keyword(s):  
Visible Light ◽  
Quantum Wells ◽  
Near Infrared ◽  
Light Emission ◽  
Band Edge Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Hole Trapping ◽  
Si Quantum Dots ◽  
Visible Light Emission

AbstractSilicon multiple quantum wells confined by ZnS barriers have been grown by MOCVD. Calculations indicate that well widths must be less than 15Å for visible light emission, basically independent of the band offsets. No near-infrared photoluminescence (except bulk Si band-edge emission) was observed from samples with 70Å or greater Si layers, using stimulation at 325 nm with a He-Cd laser; hole trapping in ZnS may play a role. However, we found evidence of yellow light emission from samples which possibly contain Si quantum dots embedded in ZnS.

Visible light emission upon near-infrared excitation in a transparent solution of nanocrystalline β-NaGdF4: Yb3+, Er3+

2005 ◽  
Vol 407 (1-3) ◽  
pp. 124-128 ◽  
Author(s):  
Annina Aebischer ◽  
Stephan Heer ◽  
Daniel Biner ◽  
Karl Krämer ◽  
Markus Haase ◽  
...  
Keyword(s):  
Visible Light ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Excitation ◽  
Visible Light Emission

scholarly journals The impact of electron and hole trapping coefficient on nonlinear phenomena in photorefractive multiple quantum well structures

2016 ◽  
Vol 8 (4) ◽  
pp. 125
Author(s):  
Blazej Jablonski ◽  
Andrzej Ziolkowski ◽  
Agnieszka Branecka ◽  
Ewa Weinert-Raczka
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Nonlinear Phenomena ◽  
Multiple Quantum ◽  
Wave Mixing ◽  
Quantum Well Structures ◽  
Hole Trapping ◽  
Two Wave Mixing

Semiconductor photorefractive quantum wells belong to materials with strong optical nonlinearity. One of the parameters that may affect the course of nonlinear phenomena in these materials is the electron and hole trapping coefficient. We present the results of a numerical analysis aimed to find out, how electric field-dependent trapping coefficients affect the process of space-charge field formation in multiple quantum wells in the phenomenon of photorefractive two-wave mixing. Full Text: PDF ReferencesQ. Wang, R. M. Brubaker, D. D. Nolte and M. R. Melloch, "Photorefractive quantum wells: transverse Franz-Keldysh geometry," J. Opt. Soc. Am. B 9, 1626 (1992) CrossRef D.D. Nolte and M.R. Melloch, in: Photorefractive effects and Materials, Chap.6, ed. by D. D. Nolte (Kluwer Academic, Boston, 1995) CrossRef D.D. Nolte, "Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications"", J. Appl. Phys. 85, 6259 (1999) CrossRef Q.Wang, R. M. Brubaker and D. D. Nolte, "Photorefractive phase shift induced by hot-electron transport: Multiple-quantum-well structures", J. Opt. Soc. Am. B 9 (1994) 1773. CrossRef V. Ya. Prinz, S. N. Rechkunov, "Influence of a Strong Electric Field on the Carrier Capture by nonradiative Deep-Level Centers in GaAs", Phys. Stat. Sol. (b) 118, 159 (1983) CrossRef S.M. Sze, Physics of Semiconductors Devices, second ed., Wiley, New York, 1981 (Chapter 10) DirectLink B. Jablonski, "Impact of donor compensation ratio on photorefractive two-wave mixing dynamics in multiple quantum wells structures", JNOPM 23, 1450029 (2014) CrossRef

Scanning luminescence x-ray microscopy: Progress toward selective staining using microspheres

1994 ◽  
Vol 52 ◽  
pp. 74-75
Author(s):  
C. Jacobsen ◽  
J. Fu ◽  
S. Mayer ◽  
Y. Wang ◽  
S. Williams
Keyword(s):  
Visible Light ◽  
Active Sites ◽  
Light Emission ◽  
Chinese Hamster ◽  
Polystyrene Spheres ◽  
Good Resistance ◽  
X Ray ◽  
Selective Staining ◽  
Visible Light Emission ◽  
Specific Labelling

In scanning luminescence x-ray microscopy (SLXM), a high resolution x-ray probe is used to excite visible light emission (see Figs. 1 and 2). The technique has been developed with a goal of localizing dye-tagged biochemically active sites and structures at 50 nm resolution in thick, hydrated biological specimens. Following our initial efforts, Moronne et al. have begun to develop probes based on biotinylated terbium; we report here our progress towards using microspheres for tagging.Our initial experiments with microspheres were based on commercially-available carboxyl latex spheres which emitted ~ 5 visible light photons per x-ray absorbed, and which showed good resistance to bleaching under x-ray irradiation. Other work (such as that by Guo et al.) has shown that such spheres can be used for a variety of specific labelling applications. Our first efforts have been aimed at labelling ƒ actin in Chinese hamster ovarian (CHO) cells. By using a detergent/fixative protocol to load spheres into cells with permeabilized membranes and preserved morphology, we have succeeded in using commercial dye-loaded, spreptavidin-coated 0.03μm polystyrene spheres linked to biotin phalloidon to label f actin (see Fig. 3).

Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation

1992 ◽  
Vol 31 (Part 2, No. 5A) ◽  
pp. L560-L563 ◽  
Author(s):  
Yukinori Ochiai ◽  
Norio Ookubo ◽  
Heiji Watanabe ◽  
Shinji Matsui ◽  
Yasunori Mochizuki ◽  
...  
Keyword(s):  
Visible Light ◽  
Light Emission ◽  
Ion Irradiation ◽  
Visible Light Emission

scholarly journals Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

2001 ◽  
Vol 692 ◽  
Author(s):  
J. Zhao ◽  
X. D. Zhang ◽  
Z. C. Feng ◽  
J. C. Deng ◽  
P. Jin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Cladding Layer ◽  
Cap Layer ◽  
Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)

1991 ◽  
Vol 70 (1) ◽  
pp. 529-531 ◽  
Author(s):  
Enrico Zanoni ◽  
Alessandro Paccagnella ◽  
Pietro Pisoni ◽  
Paolo Telaroli ◽  
Carlo Tedesco ◽  
...  
Keyword(s):  
Visible Light ◽  
Electron Mobility ◽  
Impact Ionization ◽  
Light Emission ◽  
High Electron ◽  
High Electron Mobility ◽  
Visible Light Emission

scholarly journals Tailorable, visible light emission from silicon nanocrystals

1999 ◽  
Vol 74 (21) ◽  
pp. 3164-3166 ◽  
Author(s):  
J. P. Wilcoxon ◽  
G. A. Samara
Keyword(s):  
Visible Light ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Visible Light Emission
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