Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures.

2004 ◽  
Vol 830 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Takaaki Miyasako ◽  
Masaru Senoo
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Rf Sputtering ◽  
Drain Current ◽  
Gate Insulator ◽  
Pzt Film ◽  
Gate Structure ◽  
Current Saturation

ABSTRACTWe report ferroelectric-gate thin film transistors (TFTs) using indium tin oxide (ITO) as a channel material. Bottom-gate structure TFTs have been fabricated using ferroelectric Pb(Zr, Ti)O3 (PZT) film as a gate insulator and ITO channel. Ferroelectric and ITO layers were formed by the sol-gel technique and RF sputtering, respectively. Drain current-drain voltage (ID-VD) characteristics of PZT/ITO ferroelectric-gate TFTs exhibit typical n-channel transistor operations with clear current saturation and electrical properties were improved by the post annealing. Drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. The obtained memory window is 2 V. The on/off current ratio of more than 102 has been obtained, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization.

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation

2005 ◽  
Vol 902 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Quartz Substrate ◽  
Drain Current ◽  
Optical Transmittance ◽  
Gate Insulator ◽  
Current Drain

AbstractWe demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On/off Current Ratio

2007 ◽  
Vol 997 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin ◽  
Tomofumi Fujimura
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Mechanical Polishing ◽  
Gate Insulator ◽  
Polishing Process ◽  
Current Ratio ◽  
Subthreshold Voltage ◽  
Voltage Swing

AbstractIndium tin oxide (ITO)-channel ferroelectric-gate thin film transistor (TFT) with large on/off current ratio is demonstrated by using mechanical polishing process to planarize the surface of ferroelectric bottom gate insulator (Bi,La)4Ti3O12 (BLT). It is shown that the mechanical polishing of the sol-gel derived polycrystalline ferroelectric BLT films causes no degradation in electrical properties. ITO channel layer was then deposited on the planarized BLT gate insulator to fabricate ferroelectric-gate TFTs. The off-current of the ITO/BLT TFT fabricated with the polishing process is drastically reduced to around 10−12 A, which is four orders of magnitude lower than that of the TFT fabricated without the polishing process. The obtained on/off current ratio is more than 107. In addition, a subthreshold voltage swing as small as 200 mV/decade was obtained.

Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors

2011 ◽  
Vol 1337 ◽  
Author(s):  
Tue T. Phan ◽  
Trinh N. Q. Bui ◽  
Takaaki Miyasako ◽  
Thanh V. Pham ◽  
Eisuke Tokumitsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Data Retention ◽  
Solution Processed ◽  
Capping Layer ◽  
Large Memory ◽  
Ferroelectric Memories ◽  
Atomically Flat

ABSTRACTWe report on the use of La2O3 (LO) as a capping layer for ferroelectric-gate thin-film transistors (FGTs) with solution-processed indium-tin-oxide (ITO) channel and Pb(Zr,Ti)O3 (PZT) gate insulator. The fabricated FGT exhibited excellent performance with a high “ON/OFF” current ratio (ION/IOFF) and a large memory window (∆Vth) of about 108 and 3.5 V, respectively. Additionally, a significantly improved data retention time (more than 16 hours) as compared to the ITO/PZT structure was also obtained as a result of good interface properties between the ITO channel and LO/PZT stacked gate insulator. We suggest that the LO capping layer acts as a barrier to prevent the interdiffusion and provides atomically flat ITO/LO/PZT interface. This all-oxide FGT device is very promising for future ferroelectric memories.

Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface

2008 ◽  
Vol 93 (22) ◽  
pp. 224106 ◽  
Author(s):  
Dipti Gupta ◽  
Manish Anand ◽  
Seong-Wan Ryu ◽  
Yang-Kyu Choi ◽  
Seunghyup Yoo
Keyword(s):  
Thin Film ◽  
Ag Nanoparticles ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Sol Gel ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Insulator Interface

Gate Insulator Engineering in Top-Gated Indium-Tin-Oxide-Stabilized ZnO Thin-Film Transistors

2019 ◽  
Vol 40 (7) ◽  
pp. 1104-1107 ◽  
Author(s):  
Sunbin Deng ◽  
Rongsheng Chen ◽  
Guijun Li ◽  
Meng Zhang ◽  
Fion Sze Yan Yeung ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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