Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors

2011 ◽  
Vol 1337 ◽  
Author(s):  
Tue T. Phan ◽  
Trinh N. Q. Bui ◽  
Takaaki Miyasako ◽  
Thanh V. Pham ◽  
Eisuke Tokumitsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Data Retention ◽  
Solution Processed ◽  
Capping Layer ◽  
Large Memory ◽  
Ferroelectric Memories ◽  
Atomically Flat

ABSTRACTWe report on the use of La2O3 (LO) as a capping layer for ferroelectric-gate thin-film transistors (FGTs) with solution-processed indium-tin-oxide (ITO) channel and Pb(Zr,Ti)O3 (PZT) gate insulator. The fabricated FGT exhibited excellent performance with a high “ON/OFF” current ratio (ION/IOFF) and a large memory window (∆Vth) of about 108 and 3.5 V, respectively. Additionally, a significantly improved data retention time (more than 16 hours) as compared to the ITO/PZT structure was also obtained as a result of good interface properties between the ITO channel and LO/PZT stacked gate insulator. We suggest that the LO capping layer acts as a barrier to prevent the interdiffusion and provides atomically flat ITO/LO/PZT interface. This all-oxide FGT device is very promising for future ferroelectric memories.

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

2010 ◽  
Vol 13 (5) ◽  
pp. H141 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Soon-Won Jung ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Solution Processed ◽  
Zinc Indium Oxide

High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
Author(s):  
Ployrung Kesorn ◽  
Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Insulator ◽  
Solution Processed ◽  
High K

Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

RSC Advances ◽  
2015 ◽  
Vol 5 (63) ◽  
pp. 51440-51445 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Solution Processed ◽  
Indium Zinc Oxide

Enhanced performance of solution-processed IZO-TFTs with ZrOx interlayer due to Al diffusion suppression.

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation

2005 ◽  
Vol 902 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Quartz Substrate ◽  
Drain Current ◽  
Optical Transmittance ◽  
Gate Insulator ◽  
Current Drain

AbstractWe demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.

Effect of Hf alloy in ZrOx gate insulator for solution processed a-IZTO thin film transistors

2018 ◽  
pp. 1-1 ◽  
Author(s):  
Ravindra Naik Bukke ◽  
Narendra Naik Mude ◽  
Jiseob Lee ◽  
Christophe Avis ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Solution Processed
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