Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface

2008 ◽  
Vol 93 (22) ◽  
pp. 224106 ◽  
Author(s):  
Dipti Gupta ◽  
Manish Anand ◽  
Seong-Wan Ryu ◽  
Yang-Kyu Choi ◽  
Seunghyup Yoo
Keyword(s):  
Thin Film ◽  
Ag Nanoparticles ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Sol Gel ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Insulator Interface

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

2010 ◽  
Vol 13 (5) ◽  
pp. H141 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Soon-Won Jung ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Solution Processed ◽  
Zinc Indium Oxide

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface

Effect of Double-Layered Al[sub 2]O[sub 3] Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

2010 ◽  
Vol 13 (8) ◽  
pp. H264 ◽  
Author(s):  
Sung-Min Yoon ◽  
Sang-Hee Ko Park ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Chi-Sun Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bias Stability

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

2011 ◽  
Vol 26 (3) ◽  
pp. 034007 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Chun-Won Byun ◽  
Soon-Won Jung ◽  
Min-Ki Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator

Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles

2011 ◽  
Vol 519 (17) ◽  
pp. 5771-5774 ◽  
Author(s):  
Jung Hyeon Bae ◽  
Gun Hee Kim ◽  
Yu Ri Choi ◽  
Myung Koo Kang ◽  
Dong Lim Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Ag Nanoparticles ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Memory Characteristics

SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors

2011 ◽  
Vol 99 (11) ◽  
pp. 112115 ◽  
Author(s):  
Eunkyeom Kim ◽  
Youngill Kim ◽  
Do Han Kim ◽  
Kyoungmi Lee ◽  
Gregory N. Parsons ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Zno Thin Film ◽  
Charge Trap
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