Preparations and Evaluations of Magnetoelectric Thin Films for Josephson Field Effect Transistor

2004 ◽  
Vol 811 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Koji Matsuo ◽  
Noriaki Ootsuka ◽  
Hiroshi Yamamoto
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electronic Devices ◽  
Gate Insulator ◽  
Induced Magnetic Field ◽  
Multilayered Films ◽  
New Type ◽  
Effect Transistor

ABSTRACTWe proposed the magnetoelectric (ME) effect as a new function of oxides electronic devices. The ME effect is characterized by the appearance of an induced magnetization with electric field applied and also is true in the opposite way. As one of the oxides devices we proposed a new type of Josephson field effect transistor (JFET) as adopting the ME materials to a gate insulator. In such the device, considering the Fraunhofer pattern, large IC modulation was expected by the induced magnetic field. Representative ME material, Cr2O3 films were deposited on Josephson junctions which were formed bygrain boundaries in YBa2Cu3OX (YBCO) films grown on MgO substrates. The multilayered films, Cr2O3 /YBCO and Cr2O3 / Y2O3 / YBCO were studied as the model of JFET.

scholarly journals Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

2020 ◽  
Vol 8 (16) ◽  
pp. 5535-5540 ◽  
Author(s):  
Saleem Anwar ◽  
Beomjin Jeong ◽  
Mohammad Mahdi Abolhasani ◽  
Wojciech Zajaczkowski ◽  
Morteza Hassanpour Amiri ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Effect Transistor

Ultra-smooth thin-films of nylons, one of the most successful commercialized polymers, have been realized for the application in ferroelectric field effect transistors.

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor

scholarly journals Morphology and Field-Effect-Transistor Mobility in Tetracene Thin Films

2005 ◽  
Vol 15 (3) ◽  
pp. 375-380 ◽  
Author(s):  
F. Cicoira ◽  
C. Santato ◽  
F. Dinelli ◽  
M. Murgia ◽  
M. A. Loi ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

2010 ◽  
Vol 107 (2) ◽  
pp. 024101 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Kiyomi Nakajima ◽  
Masataka Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Crystal Diamond ◽  
Effect Transistor
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