scholarly journals Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

2010 ◽  
Vol 107 (2) ◽  
pp. 024101 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Kiyomi Nakajima ◽  
Masataka Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Crystal Diamond ◽  
Effect Transistor

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

scholarly journals Morphology and Field-Effect-Transistor Mobility in Tetracene Thin Films

2005 ◽  
Vol 15 (3) ◽  
pp. 375-380 ◽  
Author(s):  
F. Cicoira ◽  
C. Santato ◽  
F. Dinelli ◽  
M. Murgia ◽  
M. A. Loi ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Field-effect transistor on pentacene single crystal

2003 ◽  
Vol 83 (23) ◽  
pp. 4773-4775 ◽  
Author(s):  
V. Y. Butko ◽  
X. Chi ◽  
D. V. Lang ◽  
A. P. Ramirez
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator

2004 ◽  
Vol 85 (3) ◽  
pp. 425-427 ◽  
Author(s):  
Keisuke Shibuya ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
Masashi Kawasaki ◽  
Hideomi Koinuma
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Effect Transistor ◽  
Atomically Flat

Sub-micron field-effect transistor using granular NbN thin films

1993 ◽  
Vol 3 (1) ◽  
pp. 1987-1990 ◽  
Author(s):  
L. Zhang ◽  
N. Yoshikawa ◽  
M. Sugahara
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Nanomembranes: Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor (Adv. Funct. Mater. 41/2014)

2014 ◽  
Vol 24 (41) ◽  
pp. 6564-6564
Author(s):  
Kanglin Xiong ◽  
Sung Hyun Park ◽  
Jie Song ◽  
Ge Yuan ◽  
Danti Chen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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