Platinum Ion Implantation Into Single Crystal Zirconia With A Carbon Sacrificial Layer on The Surface

1994 ◽  
Vol 354 ◽  
Author(s):  
D.X. Cao ◽  
J.W. Chu ◽  
A.P. Pogany ◽  
D.K. Sood ◽  
I.G. Brown
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Sample Surface ◽  
Cubic Zirconia ◽  
Ion Damage ◽  
The Matrix

AbstractSingle crystal samples of (100) oriented yttria stabilized cubic zirconia are implanted with Pt ions to doses up to 6x1017 /cm2. Our previous studies showed that the retained Pt dose was too small due to the sputter limit. To overcome this problem, a C film was deposited on the surface of some samples before implantation. The implanted samples were annealed isothermally in air at 400°-1200°C, and were analysed with RBS-C and TEM. The C-layer has been found to be very effective for protecting the sample surface from sputtering and thus increasing the Pt concentration by a factor of two, up to 33 mol.% Pt. The as-implanted Pt was non-substitutional. After annealing at 1200°C for 1 h, Pt diffused to large depths, and showed a substitutional fraction of about 23%. The detailed TEM measurements on the microstructure and damage of the implanted layer show that after annealing at these temperatures the recovery of ion damage is incomplete. Pt atoms undergo substantial migration concurrently. The Pt at first dissolves in the matrix (though not substitutionally), diffuses and precipitates again at high temperature.

An Ultrahigh-Temperature, Single-Crystal Texture Camera Diffractometer*

1964 ◽  
Vol 8 ◽  
pp. 86-90
Author(s):  
Robert L. Prickett
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Ion Beam ◽  
Sample Surface ◽  
Refractory Materials ◽  
X Ray ◽  
First Order ◽  
Crystal Texture ◽  
Ultrahigh Temperature ◽  
Electronic Detector

AbstractA single-crystal high-temperature X-ray camera has been built with permissible operating temperatures of 2500°C. The camera is constructed to rest upon a Siemens horizontal diffractometer and may be used with either an external electronic detector or with film. The sample is supported on an externally adjustable goniometer head and is heated from the back by an ion beam. Controlled oscillation allows rotation photographs to be obtained from the sample surface not touched by the ion stream. Temperature is controlled by a thermocouple supporting the sample, the thermocouple being an intrinsic part of the goniometer. As a design limit, zero and first order layer lines with iron Kα. radiation on specimens with lattice parameters of 2.6 Å or larger may be recorded. Copper, cobalt, and molybdenum radiation allow even greater latitude. Types of samples that may be studied include powder (pellet), single crystal, wire, or rod. The camera serves equally well for single-crystal, texture, or powder studies on refractory materials.

Research of Alloy Orb on Wavelet

2012 ◽  
Vol 503-504 ◽  
pp. 525-528
Author(s):  
Shu Zhang ◽  
Lei Meng
Keyword(s):  
Crystal Structure ◽  
Heat Treatment ◽  
High Temperature ◽  
Single Crystal ◽  
Dislocation Slip ◽  
Cubic Phase ◽  
Deformation Characteristics ◽  
Alloy Structure ◽  
Matrix Channel ◽  
The Matrix

via completely after heat-treatment, [111] orientation of single crystal alloy structure is still cubic  phase at way coherency are ordered in matrix g panel and the direction rules arrangement; In high temperature and tensile stress creep period, with stress axes ordered  has formed certain Angle raft shape organization, creep later in nearly fracture zone, raft shape  ordered caring and distortion in happen, with strain increases, coarsening and distorted aggravating, until the present wavy shape; During the creep [111] orientation of single crystal alloys deformation characteristics is a wrong in  matrix channel to sports and shear raft shape  phase, due to form larger, more variable dislocation cut ordered after raft shape , occurred in dislocation bunch of sets and its formation and crystal structure; Among them, the matrix channel to inherit the maximum shear dislocation slip is made of alloy with larger strain rate main reason.

Crystal Ion-Slicing of Magnetic and Ferroelectric Oxide Films

1998 ◽  
Vol 517 ◽  
Author(s):  
M. Levy ◽  
R.M. Osgood ◽  
A. Kumar ◽  
H. Bakhru ◽  
R. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Oxide Films ◽  
High Quality ◽  
Damage Layer ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Ferroelectric Oxide

AbstractThe epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.

Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO3 single crystal thin films

2004 ◽  
Vol 811 ◽  
Author(s):  
Young-Bae Park ◽  
Jennifer L. Ruglovsky ◽  
Matthew J. Dicken ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Ferroelectric Materials ◽  
High Dose ◽  
Bulk Crystals ◽  
Amorphous Si ◽  
Silicon Based ◽  
Kinetics Of

ABSTRACTLayer transfer of thin BaTiO3 films onto silicon-based substrates has been investigated. H+ and He+ ion implantation created a buried sacrificial layer in the BaTiO3 single crystals. Thermodynamics and kinetics of cavity nucleation and growth at the bonding interface have been investigated and single crystal thin film layers were transferred onto amorphous Si3N4 and Pt substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting. Also, after high dose ion implantation, the films remain single crystal and stoichiometry. Finally, characterization proves the layer-transferred thin films are ferroelectrically active, with domains and piezoresponse similar to bulk crystals.

Effects of Hydrogen Ion Implantation and Thermal Annealing on Structural and Optical Properties of Single-crystal Sapphire.

2011 ◽  
Vol 1354 ◽  
Author(s):  
William T. Spratt ◽  
Mengbing Huang ◽  
Chuanlei Jia ◽  
Lei Wang ◽  
Vimal K. Kamineni ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Ion Implantation ◽  
Single Crystal ◽  
Crystal Defects ◽  
Hydrogen Ion ◽  
Sensing Applications ◽  
Prism Coupling ◽  
Single Crystal Sapphire ◽  
Hydrogen Ion Implantation

ABSTRACTDue to its outstanding thermal and chemical stability, single-crystal sapphire is a crucial material for high-temperature optical sensing applications. The potential for using hydrogen ion implantation to fabricate stable, high temperature optical waveguides in single crystal sapphire is investigated in this work. Hydrogen ions were implanted in c-plane sapphire with energies of 35 keV and 1 MeV and fluences 1016-1017/cm2. Subsequent annealing was carried out in air at temperatures ranging from 500˚C to 1200˚C. Complementary techniques were used to characterize the samples, including ellipsometry and prism coupling to examine optical properties, Rutherford backscattering/ion channeling for crystal defects, and nuclear reaction analysis for hydrogen profiling. Several guiding modes were observed in H-implanted (1 MeV) samples annealed above 800˚C through prism coupling, and a maximum index modification of 3% was observed in the 35 keV samples and 1% in the 1 MeV samples through ellipsometry, with the 1 MeV index variation being confirmed through prism coupling. The possible causes of the index modifications, such as H related defects, as well as implications for tailoring the refractive index of sapphire are discussed.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Effect of Additives on High Temperature Deformation in Cubic Zirconia (Y-CSZ)

2008 ◽  
Vol 57 (6) ◽  
pp. 543-547
Author(s):  
Takuma WADA ◽  
Takahiro KAKEI ◽  
Hiroyuki HORII ◽  
Takeshi SHIONO ◽  
Yasunori OKAMOTO
Keyword(s):  
High Temperature ◽  
High Temperature Deformation ◽  
Temperature Deformation ◽  
Cubic Zirconia ◽  
Effect Of Additives
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