Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
W. Skorupa ◽  
D. Panknin ◽  
M. Voelskow ◽  
W. Anwand ◽  
T. Gebel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Thermal Processing ◽  
Flash Lamp ◽  
Semiconductor Materials ◽  
Great Promise ◽  
Heteroepitaxial Growth ◽  
Junction Formation ◽  
Cubic Silicon Carbide ◽  
Novel Devices

ABSTRACTThe use of flash lamp annealing for processing semiconductor materials is outlined. Specific applications include ultra-shallow junction formation and heteroepitaxial growth of improved quality thin films of cubic silicon carbide. It is demonstrated that flash lamp annealing holds great promise as a technique for fabricating novel devices.

TiSi2 Integrity within a Doped Silicide Process Step

1992 ◽  
Vol 279 ◽  
Author(s):  
G. M. Crean ◽  
P. D. Cole ◽  
J. Stoemenos
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Silicon Substrate ◽  
Thermal Processing ◽  
Rutherford Backscattering Spectrometry ◽  
Cross Sectional ◽  
Process Step ◽  
Thermal Budget ◽  
Transmission Electron ◽  
Junction Formation

ABSTRACTDegradation of arsenic implanted titanium suicide (TiSi2) thin films as a result of thermal processing for shallow junction formation is investigated. Significant arsenic diffusion from the suicide overlayer into the silicon substrate has been detected by Rutherford Backscattering Spectrometry at drive-in temperatures > 1050°C. Cross-sectional transmission electron micrographs have shown the suicide film become increasingly non-uniform as the thermal budget increases, ultimately leading to discontinuities forming in the suicide film. This observed degradation of the titanium suicide film is also supported by sheet resistance measurements which show the film to degrade significantly above a threshold thermal budget

Tensile mechanical behaviors of cubic silicon carbide thin films

2012 ◽  
Vol 62 ◽  
pp. 195-202 ◽  
Author(s):  
Wen-Xiu Wang ◽  
Li-Sha Niu ◽  
Yang-Yang Zhang ◽  
En-Qiang Lin
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Mechanical Behaviors ◽  
Cubic Silicon Carbide

Deposition of cubic silicon carbide thin films via thermal decomposition of methyltrichlorosilane in hydrogen

2005 ◽  
Vol 41 (3) ◽  
pp. 239-242 ◽  
Author(s):  
L. M. Ivanova ◽  
P. A. Aleksandrov ◽  
K. D. Demakov ◽  
V. A. Starostin ◽  
S. G. Shemardov
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Silicon Carbide ◽  
Cubic Silicon Carbide

Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD

2012 ◽  
Author(s):  
Himanshu S. Jha ◽  
M. Singh ◽  
Asha Yadav ◽  
. Lalhriatzuala ◽  
Dinesh Deva ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Solar Cells ◽  
Window Layer ◽  
Hot Wire ◽  
Cubic Silicon Carbide

The Small Angle Cleavage Technique for XTEM Sample Preparation

1998 ◽  
Vol 4 (S2) ◽  
pp. 866-867
Author(s):  
S. D. Walck ◽  
J. P. McCaffrey
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Sample Preparation ◽  
Small Angle ◽  
Substrate Material ◽  
Semiconductor Materials ◽  
Inexpensive Method ◽  
Cross Sectional ◽  
Hard Materials ◽  
Typical Material

The Small Angle Cleavage Technique (SACT) is a relatively simple and inexpensive method of producing superior cross sectional TEM specimens. For speed of preparation, it is unsurpassed; for example, ten samples can easily be prepared in about an hour from a typical material. It is particularly well suited for rapidly examining coatings and thin films very soon after they have been deposited. A major limitation of the technique is that it does require the substrate material to cleave or fracture. For this reason, it has been applied almost exclusively to semiconductor materials, but the technique has been extended quite successfully to other substrates such as glass, silicon carbide, quartz, sapphire, and other hard materials. Several procedures have been added or modified to the original technique developed by McCaffrey that makes it much easier to get started in using the technique. A detailed pictorial outline of the technique has been described elsewhere by the authors.

Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications

2012 ◽  
Vol 717-720 ◽  
pp. 517-520 ◽  
Author(s):  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Andrea Severino ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Stress Field ◽  
Silicon Substrate ◽  
Stress Fields ◽  
Stress Model ◽  
Heteroepitaxial Growth ◽  
Device Applications ◽  
Cubic Silicon Carbide

Using several characterization techniques (μ-Raman, mechanical profilometer and microstructure deflections) together with a recent stress model[ ] we study the heteroepitaxial growth of cubic silicon carbide on silicon (100). We show that the observed inconsistency between experimental results might be the result of defects generated on the silicon substrate during the carbonization process. In such a situation wafer curvature techniques do not allow the determination of the stress field in the grown films neither quantitatively nor qualitatively.

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