The Use of SiGe Barriers During the Formation of p+ Shallow Junctions by Ion Implantation

2004 ◽  
Vol 810 ◽  
Author(s):  
Phillip E. Thompson ◽  
Joe Bennett ◽  
Susan Felch
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Ion Implantation ◽  
Control Sample ◽  
Alloy Layer ◽  
Junction Depth ◽  
Effective Barrier ◽  
High Temperature Processes ◽  
Shallow Junctions ◽  
Thermal Stability Of

ABSTRACTUltra-shallow p+ junctions are required for next generation electronics. We present a technique for the formation of ultra-shallow p+ junctions that increases the thermal stability of the junctions formed by ion implantation. By using a 10 nm Si1−xGex barrier layer, the diffusion of B is inhibited during high temperature processes. Alloys having a composition from x = 0 to 0.4 were investigated and it is shown that the most effective barrier had the maximum Ge fraction. The junction depth decreased to 36.7 nm for a 5×1015/cm2 1kV BF3 plasma implant spike annealed at 1050°C, compared to a junction depth of 48 nm for a Si control sample having the identical implant and anneal. It is hypothesized that the inhibition of B diffusion in the alloy layer is caused by a reduction of the Si self-interstitials in the alloy.

Silicide Contacts for Sub-0.25 μm Devices

1999 ◽  
Vol 564 ◽  
Author(s):  
L. J. Chen ◽  
S. L. Cheng ◽  
S. M. Chang ◽  
Y. C. Peng ◽  
H. Y. Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Silicon Layer ◽  
Metal Contacts ◽  
Nitrogen Ion Implantation ◽  
Selective Epitaxial Growth ◽  
Nitrogen Ion ◽  
Thermal Stability Of

AbstractLow resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μ m devices. In the present paper, we review recent progress in the investigations of lowresistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer, improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001 )Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Mossbauer Study of the Role of Aluminum and Chromium in Nitrogen Implanted Iron

1991 ◽  
Vol 235 ◽  
Author(s):  
M. Kopcewicz ◽  
J. Jagielski ◽  
A. Turos ◽  
D. L. Williamson
Keyword(s):  
Thermal Stability ◽  
Ion Implantation ◽  
Metallic Iron ◽  
Conversion Electron ◽  
Alloying Elements ◽  
Mössbauer Study ◽  
Conversion Electron Mössbauer Spectroscopy ◽  
Conversion Electron Mossbauer Spectroscopy ◽  
Thermal Stability Of

ABSTRACTThe role of alloying elements such as Cr and Al in the formation and stability of the nitride phases formed due to N ion implantation into metallic iron was studied by conversion electron Mössbauer spectroscopy (CEMS). The thermal stability of nitride phases upon 1 h annealing was greatly increased as a result of co-implanting either Cr or Al with N as compared to pure α-Fe implanted only with N.

Increased Thermal Stability of Co-silicide Using Co-Ta Alloy Films

2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Grain Boundary ◽  
Reaction Rate ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Alloy Films ◽  
Post Annealing ◽  
Alloy Process ◽  
Thermal Stability Of

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

Effects of nitrogen ion implantation on the thermal stability of tungsten thin films

1998 ◽  
Vol 16 (2) ◽  
pp. 477-481 ◽  
Author(s):  
Yong Tae Kim ◽  
Chul Soon Kwon ◽  
Dong Joon Kim ◽  
Jong-Wan Park ◽  
Chang Woo Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Depth Profile ◽  
Ternary Phase ◽  
Nickel Silicide ◽  
Composition Gradient ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Thermal Stability Of ◽  
Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

Thermal stability of high-temperature materials. Part 1

2004 ◽  
Vol 45 (5) ◽  
pp. 327-332 ◽  
Author(s):  
V. V. Kolomeitsev ◽  
S. A. Suvorov ◽  
E. F. Kolomeitseva
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Temperature Materials ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document