Phosphorus and Boron Implantation into (100) Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Y. S. Suh ◽  
M. S. Carroll ◽  
R. A. Levy ◽  
A. Sahiner ◽  
C. A. King
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Dopant Activation ◽  
Entire Energy Range ◽  
Entire Energy ◽  
Boron Implantation ◽  
Pearson Distributions ◽  
P Type ◽  
First Four Moments ◽  
And Diffusion ◽  
Secondary Ion

ABSTRACTBoron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm−2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
A.J. Ptak ◽  
T.H. Myers ◽  
Lijun Wang ◽  
N.C. Giles ◽  
M. Moldovan ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Plasma ◽  
Dopant Incorporation ◽  
Optical Activation ◽  
P Type ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTStep-doped structures of both magnesium and beryllium were grown in GaN and analyzed using secondary ion mass spectrometry. Dopant incorporation was studied as a function of substrate temperature and dopant flux for Ga-polarity and N-polarity GaN. Incorporation is different for each polarity, with Mg incorporating by up to a factor of 20 times more (30 times more with atomic hydrogen) on the Ga-face, while Be incorporates more readily on the N-face. The effect of atomic hydrogen on the incorporation kinetics of both Mg and Be is also discussed. Mg and Be both undergo surface segregation during growth. Photoluminescence measurements suggest that Be is a p-type dopant with an optical activation energy of approximately 100 meV.

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
A. G. Ulyashin ◽  
Yu. A. Bumay ◽  
W. R. Fahrner ◽  
A. I. Ivanovo ◽  
R. Job ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Ions ◽  
Enhanced Diffusion ◽  
Thermal Donor ◽  
Float Zone ◽  
Donor Formation ◽  
Effect Of Oxygen ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTThe effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

2010 ◽  
Vol 645-648 ◽  
pp. 913-916 ◽  
Author(s):  
Takashi Tsuji ◽  
T. Tawara ◽  
Ryohei Tanuma ◽  
Yoshiyuki Yonezawa ◽  
Noriyuki Iwamuro ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Implantation Dose ◽  
Heat Radiation ◽  
Leakage Currents ◽  
Screw Dislocations ◽  
X Ray ◽  
Maximum Electric Field ◽  
Almost All ◽  
P Type ◽  
Secondary Ion

The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose on reverse leakage currents. Only in the highest dose with the Al concentration of 2x1020cm-3, more than 90% of the devices showed high leakage currents above 10-4A at the maximum electric field of 3MV/cm. In such devices, almost all of the emissive spots corresponded to threading screw dislocations (TSDs) by the analysis of emission microscopy and X-ray topography. These TSDs were defined as killer defects with the estimated density of 500cm-2 in the case of the highest dose. The emissions were supposed to be due to microplasmas, since the spectra of the emissions were different from those of heat radiation. Condensation of Al atoms, nitrogen atoms and DI defects were excluded as the origin of the emissions by secondary ion mass spectrometry and low temperature photoluminescence analyses.

scholarly journals Alkali Metal Re-Distribution after Oxidation of 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 677-680
Author(s):  
Margareta K. Linnarsson ◽  
Sethu Saveda Suvanam ◽  
Lasse Vines ◽  
Anders Hallén
Keyword(s):  
Alkali Metal ◽  
Alkali Metals ◽  
Main Part ◽  
Secondary Ion Mass Spectrometry ◽  
Minor Amount ◽  
Sodium Potassium ◽  
Alkali Atoms ◽  
A Minor ◽  
P Type ◽  
Secondary Ion

Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.

Interfacial Reactions Between Metal Thin Films and p-GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
J.T. Trexler ◽  
S.J. Miller ◽  
P.H. Holloway ◽  
M.A. Khan
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Doping Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Surface Region ◽  
Metal Thin Films ◽  
Current Voltage ◽  
P Type ◽  
Secondary Ion

ABSTRACTThe reactions between Au, Au/Ni and Au/C/Ni thin films on p-GaN have been studied using current-voltage (I-V) measurements, Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS). The metallization schemes consisted of ≈2000Ǻ sputtered Au, 1000Ǻ Au/500Ǻ Ni, and 1000Ǻ Au/100Ǻ C/500Ǻ Ni electron beam evaporated. The Au/Ni metallization scheme is of particular interest since it is the basis for the most commonly used ohmic p-type contacts for blue GaN LED’s. Au does not decompose the GaN matrix, while Ni has been shown to react with GaN above a temperature of 400° C for times longer than 5 minutes. Upon decomposition of the GaN by Ni, incorporation of C at the metal/GaN interface occurred. It is believed that a regrowth of GaN occurred, with the surface region being doped with C. Attempts at increasing this doping concentration by introducing an interfacial C layer were not successful.

MeV Boron Implantation and Masking

1993 ◽  
Vol 316 ◽  
Author(s):  
James P. Lavine ◽  
A. J. Filo ◽  
D. L. Losee ◽  
P. A. Guidash ◽  
S.-T. Lee ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Secondary Ion Mass Spectrometry ◽  
Thick Layer ◽  
High Energy ◽  
Boron Implantation ◽  
Boron Ions ◽  
Pass Through ◽  
Metal Layers ◽  
Secondary Ion

ABSTRACTBoron depth distributions are reported for MeV implants into silicon through a variety of masking materials. Silicon is implanted with boron through a 0.1-µm-thick layer of thermally grown silicon dioxide. Secondary ion mass spectrometry (SIMS) shows the projected ranges agree within 10% with data reported in the literature and with results from the computer program TRIM. Silicon dioxide, photoresist, and metal layers are used to mask the high-energy boron implants. The SIMS results indicate that TRIM overestimates the energy loss of MeV boron ions as they pass through photoresist and/or silicon dioxide.

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide

1994 ◽  
Vol 339 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Secondary Ion Mass Spectrometry ◽  
Field Measurements ◽  
Breakdown Field ◽  
Oxygen Compound ◽  
Gate Oxides ◽  
Capacitance Voltage ◽  
Flatband Voltage ◽  
P Type ◽  
Secondary Ion

ABSTRACTMonocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. POCI3 doped polysilicon gates were used for electrical characterisation by capacitance-voltage measurements and breakdown field measurements. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm-2. The incorporation of aluminum in the oxides was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals were interpreted as evidence of an aluminum-Oxygen compound having been formed (ie Al2O3).

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