Structural and Electronic Properties of SiCl4-based Microcrystalline Silicon Films

2004 ◽  
Vol 808 ◽  
Author(s):  
Wolfhard Beyer ◽  
Reinhard Carius ◽  
Michael Lejeune ◽  
Uwe Zastrow
Keyword(s):  
Electronic Properties ◽  
Amorphous Material ◽  
Silicon Films ◽  
Material Structure ◽  
Microcrystalline Silicon ◽  
Phosphorus Doping ◽  
Structural And Electronic Properties ◽  
Phosphorus Doped ◽  
Substrate Temperatures ◽  
Very High

ABSTRACTStructural and electronic properties of SiCl4-based microcrystalline silicon films were studied. A rather dense (non-porous) material structure is obtained near the transition to amorphous material, in particular at substrate temperatures of 250°C and above. Boron doping results in very high conductivity values while for phosphorus doping only lower values are reached. This latter effect is attributed to a different microstructure with lower crystalline fraction, higher hydrogen and chlorine content and increased porosity in highly phosphorus- doped material.

STRUCTURAL AND ELECTRONIC PROPERTIES OF CVD SILICON FILMS NEAR THE CRYSTALLIZATION TEMPERATURE

1982 ◽  
Vol 43 (C1) ◽  
pp. C1-271-C1-276 ◽  
Author(s):  
J. Magariño ◽  
D. Kaplan ◽  
R. Bisaro ◽  
J. F. Morhange ◽  
K. Zellama
Keyword(s):  
Electronic Properties ◽  
Crystallization Temperature ◽  
Silicon Films ◽  
Structural And Electronic Properties

Relation between Electronic Properties and Density of Crystalline Agglomerates in Microcrystalline Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Paula C.P. Bronsveld ◽  
Arjan Verkerk ◽  
Tomas Mates ◽  
Antonin Fejfar ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Chemical Vapour ◽  
Very High Frequency ◽  
Silicon Thin Films ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Different Types ◽  
Substrate Temperatures ◽  
Intergrain Boundaries ◽  
Very High

AbstractA series of silicon thin films was made by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at substrate temperatures below 100 °C at different hydrogen to silane dilution ratios. The electronic properties of these layers were studied as a function of the surface crystalline fraction as determined accurately from a combination of microscope images at different length scales (gathered by using different types of microscopes). The results show that the electrical conductivity increases monotonously as a function of crystalline surface coverage and no discontinuity is observed at the percolation threshold. An increase in conductivity of four orders of magnitude for layers with a high crystalline content is observed after annealing at temperatures up to 170 °C. Combined with the information that oxygen is incorporated at Si-H surface bond sites, this suggests that doping of the intergrain boundaries by oxygen might be dominantly responsible for the electronic properties of mixed phase silicon.

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