Универсальность поведения гистерезиса магнитосопротивления и его температурной эволюции для гранулярных высокотемпературных сверхпроводников Y-Ba-Cu-O

The work is devoted to the establishment of regularities in the behavior of the magnetoresistance hysteresis R(H) of granular high-temperature superconductors (HTS) of the yttrium system. We carried out a comparative study of the magnetotransport properties of granular HTSC samples, which have (i) approximately the same magnetic properties and temperatures of the onset of the superconducting transition (90.5–93.5 K, which characterizes HTS grains) and (ii) different values of the transport critical current JC (which characterizes the intergrain boundaries). Despite the significant scatter in the JC values (more than an order of magnitude) of the three samples studied, a universal behavior of the magnetoresistance hysteresis was found, apparently inherent in all granular Y-Ba-Cu-O. The R(H) hysteresis is very wide, and in a sufficiently large interval of the external field, the dependence of the hysteresis width of the magnetoresistance H on the field Hdec (external field H = Hdec for a decreasing hysteresis branch) is close to a linear function: H ≈ Hdec. This behavior is observed for the entire temperature range of realization of the superconducting state (the studies were carried out at temperatures of 77–88 K and 4.2 K). The explanation of the obtained result is based on the concept of consideration the effective field in the intergrain boundaries. This effective field is the superposition of the external field and the field induced by the magnetic moments of the grains. The field induced by the grains, in turn, is significantly enhanced in the region of intergrain boundaries due to the effect of the magnetic flux compression (the length of the intergrain boundaries is several orders of magnitude smaller than the size of the HTS grains). The above is confirmed from the analysis of the R(H) hysteresis for a composite HTS sample based on Y-Ba-Cu-O and CuO, in which the length of the intergranular boundaries is purposefully increased, as a result, the effect of the flux compression is less pronounced, and the hysteresis R(H) narrows.

Relation between Electronic Properties and Density of Crystalline Agglomerates in Microcrystalline Silicon

A series of silicon thin films was made by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at substrate temperatures below 100 °C at different hydrogen to silane dilution ratios. The electronic properties of these layers were studied as a function of the surface crystalline fraction as determined accurately from a combination of microscope images at different length scales (gathered by using different types of microscopes). The results show that the electrical conductivity increases monotonously as a function of crystalline surface coverage and no discontinuity is observed at the percolation threshold. An increase in conductivity of four orders of magnitude for layers with a high crystalline content is observed after annealing at temperatures up to 170 °C. Combined with the information that oxygen is incorporated at Si-H surface bond sites, this suggests that doping of the intergrain boundaries by oxygen might be dominantly responsible for the electronic properties of mixed phase silicon.

Microstructure and Optoelectronic Properties of CdSe-Thin Films

ABSTRACTCdSe appears to be a promising material to replace amorphous hydrogenated silicon as the photosensitive part in the retina of the “Electronic Eye”, a camera based on thin film technique. We have investigated the influence of post-depositional annealing treatments with respect to the optimization of the photoconductive properties. TEM-, AFM- and XPS-measurements on CdSe thin films are reported. The formation of an oxide could not be detected by XPS-depth profiling of films annealed in air but chemisorption of oxygen is expected at the intergrain boundaries. Hence, high potential barriers for electron transport will be introduced. Under illumination, trapping of photo-generated holes will neutralize the charge at the intergrain boundaries leading to improved electric properties. However, the homogeneity of the photoconductive properties in CdSe is not yet satisfying. The formation of swellings and holes on the sample surface, found by AFM-measurements, can perhaps explain the inhomogeneity of the photoconductive properties. Using Si wafers as substrate material no improvement in texturing could be reached, since an amorphous CdSe-interlayer is formed.

Grain Boundary Corrosion and Alteration Phase Formation During the Oxidative Dissolution of UO2 Pellets

ABSTRACTThe alteration behavior of UO2 pellets following their reaction under unsaturated drip-test conditions, at 90°C, for time periods of up to 10 years has been examined by solid phase and leachate analyses. Sample reactions were characterized by preferential dissolution of grain boundaries between the original press-sintered UO2 granules comprising the samples, development of a polygonal network of open channels along the intergrain boundaries, and spallation of surface granules that had undergone severe grain boundary corrosion. The development of a dense mat of alteration phases after two years of reaction trapped loose granules, resulting in reduced rates of particulate uranium release. The paragenetic sequence of alteration phases that formed on the present samples was similar to that observed in surficial weathering zones of natural uraninite (UO2) deposits, with alkali and alkaline earth uranyl silicates representing the long-term solubility-limiting phases for uranium in both systems.