Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate

2011 ◽  
Vol 109 (2) ◽  
pp. 023713 ◽  
Author(s):  
M. Y. Soro ◽  
M. E. Gueunier-Farret ◽  
J. P. Kleider
Keyword(s):  
Electronic Properties ◽  
Silicon Films ◽  
High Rate ◽  
Structural And Electronic Properties

STRUCTURAL AND ELECTRONIC PROPERTIES OF CVD SILICON FILMS NEAR THE CRYSTALLIZATION TEMPERATURE

1982 ◽  
Vol 43 (C1) ◽  
pp. C1-271-C1-276 ◽  
Author(s):  
J. Magariño ◽  
D. Kaplan ◽  
R. Bisaro ◽  
J. F. Morhange ◽  
K. Zellama
Keyword(s):  
Electronic Properties ◽  
Crystallization Temperature ◽  
Silicon Films ◽  
Structural And Electronic Properties

Role of boron in the structural and electronic properties of hydrogenated silicon films deposited by r.f. magnetron sputtering

1995 ◽  
Vol 71 (2) ◽  
pp. 115-125 ◽  
Author(s):  
Ratnabali Banerjee ◽  
T. K. Bhattacharyya ◽  
S. N. Sharma ◽  
A. K. Batabyal ◽  
A. K. Barua ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Electronic Properties ◽  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Structural And Electronic Properties

Structural and Electronic Properties of SiCl4-based Microcrystalline Silicon Films

2004 ◽  
Vol 808 ◽  
Author(s):  
Wolfhard Beyer ◽  
Reinhard Carius ◽  
Michael Lejeune ◽  
Uwe Zastrow
Keyword(s):  
Electronic Properties ◽  
Amorphous Material ◽  
Silicon Films ◽  
Material Structure ◽  
Microcrystalline Silicon ◽  
Phosphorus Doping ◽  
Structural And Electronic Properties ◽  
Phosphorus Doped ◽  
Substrate Temperatures ◽  
Very High

ABSTRACTStructural and electronic properties of SiCl4-based microcrystalline silicon films were studied. A rather dense (non-porous) material structure is obtained near the transition to amorphous material, in particular at substrate temperatures of 250°C and above. Boron doping results in very high conductivity values while for phosphorus doping only lower values are reached. This latter effect is attributed to a different microstructure with lower crystalline fraction, higher hydrogen and chlorine content and increased porosity in highly phosphorus- doped material.

Structural and electronic properties of ZnMgO/ZnO quantum wells

2005 ◽  
Vol 38 (4-6) ◽  
pp. 455-463 ◽  
Author(s):  
C. Morhain ◽  
X. Tang ◽  
M. Teisseire-Doninelli ◽  
B. Lo ◽  
M. Laügt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic Properties ◽  
Structural And Electronic Properties
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