Silicide Formation at HfO2/Si and ZrO2/Si Interfaces Induced by Ar+ Ion Bombardment

2003 ◽  
Vol 786 ◽  
Author(s):  
Yu. Lebedinskii ◽  
A. Zenkevich ◽  
D. Filatov ◽  
D. Antonov ◽  
J. Gushina ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ex Situ ◽  
Silicide Formation ◽  
Ion Etching ◽  
Silicide Layer ◽  
Layer 2 ◽  
Silicon Interface

ABSTRACTThe effect of ion bombardment with Ar+ at the energy E=2.5 keV on HfO2/Si and ZrO2/Si interfaces has been investigated in situ with XPS by growing thin metal oxide layers and further ion etching them. It is shown that a silicide layer ∼2 nm in thickness is forming, and Ar+ ion beam affects MeO2/Si (Me=Hf, Zr) interface at thickness ≤3 nm. Ex situ AFM/STM corroborates the formation of silicide layer at metal oxide/silicon interface.

In situ Transmission Electron Microscope observations of mesotaxial silicide formation in the CoSi2/Si system

1989 ◽  
Vol 47 ◽  
pp. 452-453
Author(s):  
R. Hull ◽  
A.E. White ◽  
K.T. Short ◽  
S.M. Yalisove ◽  
D. Loretto
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ex Situ ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Plan View ◽  
Silicide Layer ◽  
Transmission Electron ◽  
In Situ Experiments

A new technique for synthesis of buried epitaxial metal silicide layers in Si (“mesotaxy”) by high-dose implantation of Co and Ni into Si surfaces has been developed. Subsequent to implantation at energies in the few hundred keV range and doses in the 1017Cm−2 regime, thermal annealing at temperatures up to 1000°C results in the formation of well-defined and relatively high quality Si/metal disilicide/Si structures.The exact implantation and processing conditions are crucial in determining the structure and quality of the buried silicide layer. In this work, we describe transmission electron microscope experiments which illuminate the silicide formation process both by static studies of as-implanted and annealed structures, and dynamical in-situ experiments where as-implanted structures are annealed inside the microscope to mimic the ex-situ annealing conditions. The structure geometry in these materials turns out to be close to ideal for such in-situ experimentation: typical implantation conditions for formation of a contiguous silicide layer result in tlqe metal layers being of the order a few hundred to a thousand Å and buried about 600-1000 Å below the Si surface. In-situ annealing in the plan-view geometry inhibits surface diffusion across the interfaces, which would be expected in the cross-sectional geometry (5). The typical penetration depths attainable in Si with 200 keV electrons, say ~ 1 micron, allow a significant thickness, hsubthin of Si substrate below the metal layer, thickness hm, to be retained during the in-situ experiment such that hm ≪hsubthin. This is important, as it ensures that the film stress condition (which arises because of the difference in bulk lattice parameters between the Si and metal silicide layers) is reasonably representative of the stress conditions relevant for the case of annealing on the unthinned substrate.

scholarly journals Gratings for synchrotron and FEL beamlines: a project for the manufacture of ultra-precise gratings at Helmholtz Zentrum Berlin

2018 ◽  
Vol 25 (1) ◽  
pp. 91-99 ◽  
Author(s):  
F. Siewert ◽  
B. Löchel ◽  
J. Buchheim ◽  
F. Eggenstein ◽  
A. Firsov ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ex Situ ◽  
Photon Flux ◽  
Ion Etching ◽  
Grating Fabrication ◽  
X Ray Scattering ◽  
The Status ◽  
Development Goals

Blazed gratings are of dedicated interest for the monochromatization of synchrotron radiation when a high photon flux is required, such as, for example, in resonant inelastic X-ray scattering experiments or when the use of laminar gratings is excluded due to too high flux densities and expected damage, for example at free-electron laser beamlines. Their availability became a bottleneck since the decommissioning of the grating manufacture facility at Carl Zeiss in Oberkochen. To resolve this situation a new technological laboratory was established at the Helmholtz Zentrum Berlin, including instrumentation from Carl Zeiss. Besides the upgraded ZEISS equipment, an advanced grating production line has been developed, including a new ultra-precise ruling machine, ion etching technology as well as laser interference lithography. While the old ZEISS ruling machine GTM-6 allows ruling for a grating length up to 170 mm, the new GTM-24 will have the capacity for 600 mm (24 inch) gratings with groove densities between 50 lines mm−1and 1200 lines mm−1. A new ion etching machine with a scanning radiofrequency excited ion beam (HF) source allows gratings to be etched into substrates of up to 500 mm length. For a final at-wavelength characterization, a new reflectometer at a new Optics beamline at the BESSY-II storage ring is under operation. This paper reports on the status of the grating fabrication, the measured quality of fabricated items byex situandin situmetrology, and future development goals.

Metal oxide nanostructures incorporated/immobilized paper matrices and their applications: a review

RSC Advances ◽  
2015 ◽  
Vol 5 (101) ◽  
pp. 83036-83055 ◽  
Author(s):  
Indu Chauhan ◽  
Sudiksha Aggrawal ◽  
Chandravati Chandravati ◽  
Paritosh Mohanty
Keyword(s):  
Metal Oxide ◽  
Ex Situ ◽  
Comprehensive Review ◽  
Oxide Nanostructures ◽  
Metal Oxide Nanostructures

A comprehensive review on the metal oxide nanostructures incorporated/immobilized paper matrices byex situandin situmethods for various applications.

scholarly journals Computer-Controlled Polishing System For Preparing Multiple Pre-FIB TEM Specimens

2007 ◽  
Vol 15 (6) ◽  
pp. 38-39
Author(s):  
D. J. MacMahon ◽  
E. Raz-Moyal
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Product Yield ◽  
Interface Layer ◽  
Ex Situ ◽  
Advantages And Disadvantages ◽  
Transmission Electron ◽  
Invaluable Tool ◽  
Electron Microscopes

Semiconductor manufacturers are increasingly turning to Transmission Electron Microscopes (TEMs) to monitor product yield and process control, analyze defects, and investigate interface layer morphology. To prepare TEM specimens, Focused Ion Beam (FIB) technology is an invaluable tool, yielding a standard milled TEM lamella approximately 15 μm wide, 5 μm deep and ~100 nm thick. Several techniques have been developed to extract these tiny objects from a large wafer and view it in the TEM. These techniques, including ex-situ lift-out, H-bar, and in-situ lift-out, have different advantages and disadvantages, but all require painstaking preparation of one specimen at a time.

scholarly journals Origin of the Difference in the Resistivity of As-Grown Focused-Ion- and Focused-Electron-Beam-Induced Pt Nanodeposits

2009 ◽  
Vol 2009 ◽  
pp. 1-11 ◽  
Author(s):  
J. M. De Teresa ◽  
R. Córdoba ◽  
A. Fernández-Pacheco ◽  
O. Montero ◽  
P. Strichovanec ◽  
...  
Keyword(s):  
Voltage Dependence ◽  
Ion Beam ◽  
Carbon Matrix ◽  
Ex Situ ◽  
Semiconducting Materials ◽  
Dual Beam ◽  
Transmission Electron ◽  
The Difference ◽  
Main Component

We study the origin of the strong difference in the resistivity of focused-electron- and focused-Ga-ion-beam-induced deposition (FEBID and FIBID, resp.) of Pt performed in a dual beam equipment using(CH3)3Pt(CpCH3)as the precursor gas. We have performed in-situ and ex-situ resistance measurements in both types of nanodeposits, finding that the resistivity of Pt by FEBID is typically four orders of magnitude higher than Pt by FIBID. In the case of Pt by FEBID, the current-versus-voltage dependence is nonlinear and the resistance-versus-temperature behavior is strongly semiconducting, whereas Pt by FIBID shows linear current-versus-voltage dependence and only slight temperature dependence. The microstructure, as investigated by high-resolution transmission electron microscopy, consists in all cases of Pt single crystals with size about 3 nm embedded in an amorphous carbonaceous matrix. Due to the semiconducting character of the carbon matrix, which is the main component of the deposit, we propose that the transport results can be mapped onto those obtained in semiconducting materials with different degrees of doping. The different transport properties of Pt by FEBID and FIBID are attributed to the higher doping level in the case of FIBID, as given by composition measurements obtained with energy-dispersive X-ray microanalysis.

Ion Beam Study of Early Stages of Growth of GaN films on Sapphire

2002 ◽  
Vol 743 ◽  
Author(s):  
Eugen M. Trifan ◽  
David C. Ingram
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Ex Situ ◽  
Crystallographic Axis ◽  
In Situ Characterization ◽  
X Ray ◽  
Ion Channeling ◽  
Stages Of Growth ◽  
Early Stages

ABSTRACTAn innovative approach for in-situ characterization has been used in this work to investigate the composition, growth mode, morphology and crystalline ordering of the early stages of growth of GaN films grown on sapphire by MOCVD for substrate temperatures in the range of 450°C to 1050°C. We have performed in-situ characterization by Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, X-ray Photoelectron Spectroscopy (XPS), and Low Energy Electron Diffraction. Ex-situ the films have been characterized by Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and thickness profilometry. The films have been grown in an in-house designed and build MOCVD reactor that is attached by UHV lines to the analysis facilities. RBS analysis indicated that the films have the correct stoichiometry, have variable thickness and for low substrate temperature completely cover the substrate while for temperatures 850°C and higher islands are formed that may cover as few as 5 percent of the substrate. From Ion Channeling and LEED we have determined the crystallographic phase to be wurtzite. The crystalline quality increases with higher deposition temperature and with thickness. The films are epitaxialy grown with the <0001> crystallographic axis and planes of the GaN films aligned with the sapphire within 0.2 degrees.

3D-Printed Samples For EXLO/INLO Practice and Training

2019 ◽  
Author(s):  
Zachary A. Giannuzzi ◽  
Lucille A. Giannuzzi ◽  
Kathleen A. Gehoski ◽  
William J. Mahoney
Keyword(s):  
3D Printing ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Deliberate Practice ◽  
Cost Effective ◽  
Ex Situ ◽  
Training Samples ◽  
3D Printed ◽  
And Training

Abstract Practice and training samples have been manufactured using 3D-printing methods. These 3D-printed samples mimic the exact geometry of focused ion beam (FIB) prepared specimens and can be used to help master ex situ and in situ lift out micromanipulation methods. An additively manufactured array of samples yields numerous samples needed for repetition and deliberate practice necessary to master the lift out and micromanipulation steps. The 3D-printed samples are cost effective and negates expensive FIB time needed to prepare FIB specimens.

Multiple-Post In-Situ Lift-Out Grids Preparation Using a Dicing Saw

2011 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu-Ting Lee ◽  
San-Lin Liew ◽  
Ching-Shan Sung ◽  
Yi-Jing Wu
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Flat Surface ◽  
Ion Beam ◽  
Ex Situ ◽  
Real Case ◽  
Case Application ◽  
Bond Pads ◽  
Preparation Techniques

Abstract The use of in-situ lift-out combined with focused ion beam milling has become a favorable choice as it offers several indispensable advantages compared to the conventional mechanical and ex-situ lift-out sample preparation techniques. This paper discusses the procedures of the multiple-post in-situ lift-out grids preparation using a dicing saw. In addition, a real case is described to show that the multiple-post in-situ lift-out grids have been successfully applied to failure analysis. The multiple-post in-situ lift-out grids provide more positions and flatter surfaces for TEM sample mounting. The flat surface greatly increases the mounting efficiency and success rate. For the real case application, a thick Al fluoride oxide layer and Al corrosion were found above the Al bond pads, which had NOSP problem, and their neighbor area, respectively.

Ion Beam Mixing and Thermal Demixing of Co/Cu Multilayers

1997 ◽  
Vol 504 ◽  
Author(s):  
M. Cai ◽  
T. Veres ◽  
R. W. Cochrane ◽  
S. Roorda ◽  
R. Abdouche ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Giant Magnetoresistance ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ex Situ ◽  
Ion Beam Irradiation ◽  
X Ray ◽  
Interlayer Structure ◽  
Subsequent Thermal Annealing

ABSTRACTX-ray reflectivity and magnetotransport studies have been used to probe the effects of ion-beam irradiation and subsequent thermal annealing on the structure and giant magnetoresistance (GMR) in Co/Cu multilayers. Low-dose ion bombardment produces interfacial mixing which is accompanied by a systematic suppression of the anti ferromagnetic (AF) coupling and the GMR. For ion doses not exceeding 5 × 1014 ions/cm2, subsequent thermal annealing restores the abrupt interlayer structure as well as the GMR. The combination of low-dose ion bombardment and thermal annealing provides an ex situ technique to modify interface structure reversibly over a gnificant range.

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