Investigation of Highly c-axis Oriented AlN Thin Film Re-growth

2003 ◽  
Vol 783 ◽  
Author(s):  
F. Martin ◽  
P. Muralt ◽  
M.-A. Dubois
Keyword(s):  
Growth Process ◽  
Piezoelectric Coefficient ◽  
Native Oxide ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Native Oxide Layer ◽  
Air Exposure ◽  
Rocking Curve ◽  
Rf Plasma Cleaning

ABSTRACTThe properties of AlN films grown on a first set of differently treated AlN films have been studied by XRD, XPS, AFM, in-plane stress and interferometry. All films were deposited by dc pulsed sputtering at 300°C. The first set of films consisted of smooth, pure c-axis oriented AlN monolayers with narrow rocking curve width and excellent piezoelectric coefficient grown on platinized substrate in a large thickness range of 35–2000 nm. Subsequently, a 1000 nm AlN layer has been added. The use of a strongly alkaline developer during intermediate lithography steps and the time elapsed between the two steps of AlN re-growth were found to degrade the overall quality of the films. It's been shown that the alkaline developer etches down, increases the roughness and contaminates the surface of the AlN monolayer with mainly oxides and hydroxides while the exposure of the films to air develops a native oxide layer. By reducing the air exposure time and by the use of RF plasma cleaning prior to the re-growth process, a good piezoelectric coefficient can be recovered.

RF plasma cleaning of water-cooled mirror equipped with notch filter based on shorted λ/4 line

2019 ◽  
Vol 146 ◽  
pp. 1390-1393 ◽  
Author(s):  
Artem M. Dmitriev ◽  
N.A. Babinov ◽  
A.N. Bazhenov ◽  
I.M. Bukreev ◽  
D.I. Elets ◽  
...  
Keyword(s):  
Notch Filter ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Rf Plasma Cleaning

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

2017 ◽  
Vol 57 (1S) ◽  
pp. 01AB04 ◽  
Author(s):  
Charisse Marie D. Cagomoc ◽  
Mark Jeffry D. De Leon ◽  
Anna Sophia M. Ebuen ◽  
Marlo Nicole R. Gilos ◽  
Magdaleno R. Vasquez
Keyword(s):  
High Density Polyethylene ◽  
High Density ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Plasma Cleaning ◽  
Rf Plasma Cleaning

RF plasma cleaning of mirror surfaces: characterization, optimization, and surface physics aspects of plasma cleaning

2013 ◽  
Author(s):  
E. Pellegrin ◽  
I. Šics ◽  
C. Pérez Sempere ◽  
J. Reyes Herrera ◽  
V. Carlino
Keyword(s):  
Rf Plasma ◽  
Plasma Cleaning ◽  
Surface Physics ◽  
Rf Plasma Cleaning

Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer

2020 ◽  
Vol 1004 ◽  
pp. 32-36
Author(s):  
Byung Kyu Jang ◽  
Jong Hwi Park ◽  
Jung Woo Choi ◽  
Eunsu Yang ◽  
Jung Gyu Kim ◽  
...  
Keyword(s):  
Growth Process ◽  
New Materials ◽  
Rocking Curve ◽  
X Ray ◽  
Maximum Value ◽  
Sic Wafer ◽  
Reducing Stress ◽  
Hot Zone ◽  
Better Than

The modified hot-zone design, consisting of a new design and new materials for the backside of SiC seed holder was adopted for reducing stress in grown SiC crystal ingot and for reducing the warpage of 6-inch SiC wafer. Crucible lid on the backside of SiC seed holder was designed to be movable during the growth process. Based on the warp value and mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals grown with new hot-zone design was observed to be better than conventional design.

Plasma-Surface Interaction Limits for Remote H-Plasma Cleaning of Si(100)

1992 ◽  
Vol 259 ◽  
Author(s):  
T.P. Schneider ◽  
B.L. Bernhard ◽  
Y.L. Chen ◽  
R.J. Nemanich
Keyword(s):  
Optical Emission ◽  
Surface Region ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Plasma Exposure ◽  
Plasma Parameters ◽  
Near Surface ◽  
Platelet Defects ◽  
C 50 ◽  
Rf Plasma Cleaning

ABSTRACTAn investigation of the parameters in H-plasma cleaning influencing H-diffusion and surface etching is described. The Si surface and subsurface regions were characterized with Raman spectroscopy and high resolution transmission electron microscopy (HRTEM), and the plasma parameters were monitored with a double Langmuir probe and optical emission spectroscopy. The parameters varied in the rf plasma cleaning were the substrate temperature, the rf power, and the plasma exposure time. It was found that low pressure and low power H-plasma exposure was effective in terms of cleaning the surface. In the 300°C, 20 Watts, 2 min. H-plasma exposure case, the Raman spectra indicated that there was no detectable H incorporation into the Si bulk and HRTEM showed no obvious defect microstructure in the near surface region and that the surface was smooth. In contrast, in the 150°C, 50 Watts, 60 min. H-plasma exposure case, HRTEM indicated that H-induced platelet defects formed in the Si(100) subsurface region and that the surface morphology was rough. Raman scattering revealed Si-H features at ∼2100 cm−1.

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 187-190 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Y. Shishkin ◽  
Olof Kordina ◽  
I. Haselbarth ◽  
Stephen E. Saddow
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Structural Quality ◽  
Growth Time ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds.

X-Ray Rocking Curve Characterization of SiC Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 361-364
Author(s):  
Murugesu Yoganathan ◽  
Ping Wu ◽  
Ilya Zwieback
Keyword(s):  
Growth Process ◽  
Crystal Quality ◽  
Nondestructive Technique ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
X Ray ◽  
Typical Variation

X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown to be the major contribution to the measured broadening (FWHM). The feedback on lattice quality is used to optimize our SiC growth process. In the optimized growth runs, the typical variation in rocking curve sample angle Ω across the entire 3” diameter wafer is about 0.2 degrees. Possible mechanisms leading to changes in the lattice curvature are discussed.

Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition

2006 ◽  
Vol 527-529 ◽  
pp. 1493-1496 ◽  
Author(s):  
Mitsuaki Shimizu ◽  
Hiroshi Chonan ◽  
Guaxi Piao ◽  
Hajime Okumura ◽  
Hisayuki Nakanishi
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Process ◽  
Rf Plasma ◽  
Temperature Growth ◽  
Lateral Overgrowth ◽  
Rich Condition

In order to improve the crystal quality of MBE-grown GaN layers we employed a high temperature growth process and enhanced the lateral overgrowth. The grain size of the GaN layer was enlarged up to 2 "m in diameter. Significant improvement in the XRD characteristics was found, and the FWHM value of the asymmetric (10-12) XRD ω-scan peak became less than 400 arcsec when the layer thickness was 3 "m. Further, to planarise the surface, the low temperature gallium-rich growth process was employed and the large grooves between the grains vanished.

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