Plasma-Surface Interaction Limits for Remote H-Plasma Cleaning of Si(100)

1992 ◽  
Vol 259 ◽  
Author(s):  
T.P. Schneider ◽  
B.L. Bernhard ◽  
Y.L. Chen ◽  
R.J. Nemanich
Keyword(s):  
Optical Emission ◽  
Surface Region ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Plasma Exposure ◽  
Plasma Parameters ◽  
Near Surface ◽  
Platelet Defects ◽  
C 50 ◽  
Rf Plasma Cleaning

ABSTRACTAn investigation of the parameters in H-plasma cleaning influencing H-diffusion and surface etching is described. The Si surface and subsurface regions were characterized with Raman spectroscopy and high resolution transmission electron microscopy (HRTEM), and the plasma parameters were monitored with a double Langmuir probe and optical emission spectroscopy. The parameters varied in the rf plasma cleaning were the substrate temperature, the rf power, and the plasma exposure time. It was found that low pressure and low power H-plasma exposure was effective in terms of cleaning the surface. In the 300°C, 20 Watts, 2 min. H-plasma exposure case, the Raman spectra indicated that there was no detectable H incorporation into the Si bulk and HRTEM showed no obvious defect microstructure in the near surface region and that the surface was smooth. In contrast, in the 150°C, 50 Watts, 60 min. H-plasma exposure case, HRTEM indicated that H-induced platelet defects formed in the Si(100) subsurface region and that the surface morphology was rough. Raman scattering revealed Si-H features at ∼2100 cm−1.

RF plasma cleaning of water-cooled mirror equipped with notch filter based on shorted λ/4 line

2019 ◽  
Vol 146 ◽  
pp. 1390-1393 ◽  
Author(s):  
Artem M. Dmitriev ◽  
N.A. Babinov ◽  
A.N. Bazhenov ◽  
I.M. Bukreev ◽  
D.I. Elets ◽  
...  
Keyword(s):  
Notch Filter ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Rf Plasma Cleaning

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

2017 ◽  
Vol 57 (1S) ◽  
pp. 01AB04 ◽  
Author(s):  
Charisse Marie D. Cagomoc ◽  
Mark Jeffry D. De Leon ◽  
Anna Sophia M. Ebuen ◽  
Marlo Nicole R. Gilos ◽  
Magdaleno R. Vasquez
Keyword(s):  
High Density Polyethylene ◽  
High Density ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Plasma Cleaning ◽  
Rf Plasma Cleaning

Investigation of Highly c-axis Oriented AlN Thin Film Re-growth

2003 ◽  
Vol 783 ◽  
Author(s):  
F. Martin ◽  
P. Muralt ◽  
M.-A. Dubois
Keyword(s):  
Growth Process ◽  
Piezoelectric Coefficient ◽  
Native Oxide ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Native Oxide Layer ◽  
Air Exposure ◽  
Rocking Curve ◽  
Rf Plasma Cleaning

ABSTRACTThe properties of AlN films grown on a first set of differently treated AlN films have been studied by XRD, XPS, AFM, in-plane stress and interferometry. All films were deposited by dc pulsed sputtering at 300°C. The first set of films consisted of smooth, pure c-axis oriented AlN monolayers with narrow rocking curve width and excellent piezoelectric coefficient grown on platinized substrate in a large thickness range of 35–2000 nm. Subsequently, a 1000 nm AlN layer has been added. The use of a strongly alkaline developer during intermediate lithography steps and the time elapsed between the two steps of AlN re-growth were found to degrade the overall quality of the films. It's been shown that the alkaline developer etches down, increases the roughness and contaminates the surface of the AlN monolayer with mainly oxides and hydroxides while the exposure of the films to air develops a native oxide layer. By reducing the air exposure time and by the use of RF plasma cleaning prior to the re-growth process, a good piezoelectric coefficient can be recovered.

RF plasma cleaning of mirror surfaces: characterization, optimization, and surface physics aspects of plasma cleaning

2013 ◽  
Author(s):  
E. Pellegrin ◽  
I. Šics ◽  
C. Pérez Sempere ◽  
J. Reyes Herrera ◽  
V. Carlino
Keyword(s):  
Rf Plasma ◽  
Plasma Cleaning ◽  
Surface Physics ◽  
Rf Plasma Cleaning

Anisotropic Dry Etching of S1O2 on Si and its Impact on Surface and Near-Surface Properties of the Substrate.

1986 ◽  
Vol 68 ◽  
Author(s):  
G. S. Oehrlein ◽  
G. J. Coyle ◽  
J. C. Tsang ◽  
R. M. Tromp ◽  
J. G. Clabes ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Surface Properties ◽  
Surface Region ◽  
Dry Etching ◽  
High Concentration ◽  
Photoelectron Emission ◽  
Plasma Exposure ◽  
Near Surface ◽  
Ion Channeling ◽  
Fluorocarbon Film

AbstractIn the present paper structural and chemical changes which can occur in the surface and near-surface properties of the substrate during anisotropic dry etching of SiO2 on Si will be reviewed.Silicon specimens which had been etched in CF4/X%H2 (X≤40) have been characterized by X-ray photoelectron emission spectroscopy, He ion channeling, H profiling and Raman scattering techniques.Key results of our studies are summarized as follows: Plasma exposure of a Si surface leads to the deposition of a thin (≤50Å thick) C,F-film.A Si-carbide containing Si region is formed during RIE which is localized near the fluorocarbon-film/Si interface.The near-surface region (∼30–50Å) of the Si substrate is also heavily disordered as found by ion channeling and Raman scattering.A modified, less damaged Si region has been found in the case of hydrogen-based etching gases, which extends from about 30–50Å from the surface to a depth in extent of 250Å and contains a high concentration (∼ 5 at.%) of H as shown by hydrogen profiling techniques.From the observation of Si-H and Si-H2 vibrational modes by Raman scattering it has been shown that some of the H is bonded to the Si lattice.

Refurbishment of an Au-coated toroidal mirror by capacitively coupled RF plasma discharge

2019 ◽  
Vol 26 (4) ◽  
pp. 1152-1160
Author(s):  
Praveen Kumar Yadav ◽  
Mukund Kumar ◽  
Raj Kumar Gupta ◽  
Mangalika Sinha ◽  
J. A Chakera ◽  
...  
Keyword(s):  
Optical Emission ◽  
Ex Situ ◽  
Emission Spectrometry ◽  
Photon Flux ◽  
Rf Plasma ◽  
Mirror Surface ◽  
Plasma Exposure ◽  
Carbon Contamination ◽  
Capacitively Coupled ◽  
Before And After

Deposition of synchrotron-radiation-induced carbon contamination on beamline optics causes their performance to deteriorate, especially near the carbon K edge. The photon flux losses due to carbon contamination have spurred researchers to search for a suitable decontamination technique to restore the optical surface and retain its performance. Several in situ and ex situ refurbishing strategies for beamline optics are still under development to solve this serious issue. In this work, the carbon contamination is removed from a large (340 mm × 60 mm) Au-coated toroidal mirror surface using a capacitively coupled low-pressure RF plasma. Before and after RF plasma cleaning, the mirror was characterized by Raman spectroscopy, soft X-ray reflectivity (SXR) and atomic force microscopy (AFM) techniques. The Raman spectra of the contaminated mirror clearly show the G (1575–1590 cm−1) and D (1362–1380 cm−1) bands of graphitic carbon. The SXR curve of the contaminated mirror shows a clear dip near the critical momentum transfer of carbon, indicating the presence of carbon contamination on the mirror surface. This dip disappears after removal of the contamination layer by RF plasma exposure. A decrease in the intensities of the CO bands is also observed by optical emission spectrometry during plasma exposure. The AFM and SXR results suggest that the root-mean-square (r.m.s.) roughness of the mirror surface does not increase after plasma exposure.

scholarly journals Consequences of Different Mechanical Surface Preparation of Ni-Base Alloys during High Temperature Oxidation

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3529
Author(s):  
Wojciech J. Nowak ◽  
Krzysztof Siemek ◽  
Kamil Ochał ◽  
Barbara Kościelniak ◽  
Bartek Wierzba
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
High Temperature Oxidation ◽  
Surface Preparation ◽  
Optical Emission ◽  
Surface Region ◽  
Emission Spectrometry ◽  
Air Oxidation ◽  
Temperature Oxidation ◽  
Near Surface

The influence of surface roughness on its high temperature oxidation for an Ni-base superalloy was studied using laser profilometry, atomic force microscopy, mass change measurements, glow-discharge optical emission spectrometry, scanning electron microscopy, X-ray diffraction, and positron annihilation methods. The isothermal and cyclic air oxidation tests were performed at 1000 °C and showed dependence of oxidation behavior on surface roughness. Smoother surfaces oxidation resulted in the formation of a multilayered oxide scale consisting of NiO, Cr2O3, and internally oxidized Al2O3 while a rougher surface formed protective Al2O3 scale. The factors responsible for different oxidation behaviors were determined as higher concentration of vacancies and increased residual stresses in the near-surface region of studied alloys.

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