RF plasma cleaning of mirror surfaces: characterization, optimization, and surface physics aspects of plasma cleaning

2013 ◽  
Author(s):  
E. Pellegrin ◽  
I. Šics ◽  
C. Pérez Sempere ◽  
J. Reyes Herrera ◽  
V. Carlino
Keyword(s):  
Rf Plasma ◽  
Plasma Cleaning ◽  
Surface Physics ◽  
Rf Plasma Cleaning

RF plasma cleaning of water-cooled mirror equipped with notch filter based on shorted λ/4 line

2019 ◽  
Vol 146 ◽  
pp. 1390-1393 ◽  
Author(s):  
Artem M. Dmitriev ◽  
N.A. Babinov ◽  
A.N. Bazhenov ◽  
I.M. Bukreev ◽  
D.I. Elets ◽  
...  
Keyword(s):  
Notch Filter ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Rf Plasma Cleaning

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

2017 ◽  
Vol 57 (1S) ◽  
pp. 01AB04 ◽  
Author(s):  
Charisse Marie D. Cagomoc ◽  
Mark Jeffry D. De Leon ◽  
Anna Sophia M. Ebuen ◽  
Marlo Nicole R. Gilos ◽  
Magdaleno R. Vasquez
Keyword(s):  
High Density Polyethylene ◽  
High Density ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Plasma Cleaning ◽  
Rf Plasma Cleaning

Investigation of Highly c-axis Oriented AlN Thin Film Re-growth

2003 ◽  
Vol 783 ◽  
Author(s):  
F. Martin ◽  
P. Muralt ◽  
M.-A. Dubois
Keyword(s):  
Growth Process ◽  
Piezoelectric Coefficient ◽  
Native Oxide ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Native Oxide Layer ◽  
Air Exposure ◽  
Rocking Curve ◽  
Rf Plasma Cleaning

ABSTRACTThe properties of AlN films grown on a first set of differently treated AlN films have been studied by XRD, XPS, AFM, in-plane stress and interferometry. All films were deposited by dc pulsed sputtering at 300°C. The first set of films consisted of smooth, pure c-axis oriented AlN monolayers with narrow rocking curve width and excellent piezoelectric coefficient grown on platinized substrate in a large thickness range of 35–2000 nm. Subsequently, a 1000 nm AlN layer has been added. The use of a strongly alkaline developer during intermediate lithography steps and the time elapsed between the two steps of AlN re-growth were found to degrade the overall quality of the films. It's been shown that the alkaline developer etches down, increases the roughness and contaminates the surface of the AlN monolayer with mainly oxides and hydroxides while the exposure of the films to air develops a native oxide layer. By reducing the air exposure time and by the use of RF plasma cleaning prior to the re-growth process, a good piezoelectric coefficient can be recovered.

Plasma-Surface Interaction Limits for Remote H-Plasma Cleaning of Si(100)

1992 ◽  
Vol 259 ◽  
Author(s):  
T.P. Schneider ◽  
B.L. Bernhard ◽  
Y.L. Chen ◽  
R.J. Nemanich
Keyword(s):  
Optical Emission ◽  
Surface Region ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Plasma Exposure ◽  
Plasma Parameters ◽  
Near Surface ◽  
Platelet Defects ◽  
C 50 ◽  
Rf Plasma Cleaning

ABSTRACTAn investigation of the parameters in H-plasma cleaning influencing H-diffusion and surface etching is described. The Si surface and subsurface regions were characterized with Raman spectroscopy and high resolution transmission electron microscopy (HRTEM), and the plasma parameters were monitored with a double Langmuir probe and optical emission spectroscopy. The parameters varied in the rf plasma cleaning were the substrate temperature, the rf power, and the plasma exposure time. It was found that low pressure and low power H-plasma exposure was effective in terms of cleaning the surface. In the 300°C, 20 Watts, 2 min. H-plasma exposure case, the Raman spectra indicated that there was no detectable H incorporation into the Si bulk and HRTEM showed no obvious defect microstructure in the near surface region and that the surface was smooth. In contrast, in the 150°C, 50 Watts, 60 min. H-plasma exposure case, HRTEM indicated that H-induced platelet defects formed in the Si(100) subsurface region and that the surface morphology was rough. Raman scattering revealed Si-H features at ∼2100 cm−1.

Influence of rf Plasma in Plasma Cleaning Process on Properties of Thin Superconducting Nb3Ge Films

1985 ◽  
Vol 24 (Part 1, No. 1) ◽  
pp. 40-44 ◽  
Author(s):  
Yujiro Kato ◽  
Horst Rogalla ◽  
Bernd David
Keyword(s):  
Rf Plasma ◽  
Plasma Cleaning ◽  
Cleaning Process

BATCH MICROWAVE PLASMA CLEANING FOR ROBUSTNESS ENHANCEMENT OF AUTOMOTIVE DEVICES: AN ALTERNATIVE TO STRIP-TYPE RADIOFREQUENCY PLASMA

2018 ◽  
Vol 2018 (1) ◽  
pp. 000458-000465
Author(s):  
Ghizelle Jane E. Abarro ◽  
Rod J. Delos Santos ◽  
Alvin B. Denoyo ◽  
Darwin De Lazo ◽  
Manny S. Ramos
Keyword(s):  
Flow Pattern ◽  
Microwave Plasma ◽  
Surface Wettability ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Constant Flow ◽  
Surface Wetting ◽  
Cleaning Performance ◽  
Batch Type ◽  
Potential Alternative

Abstract This study attempts to explore Batch-type Microwave (B-MW) plasma cleaning as a potential alternative to the conventional Strip-type Radiofrequency (S-RF) plasma; for application prior molding to improve adhesion along the mold-lead frame interface. Performance of B-MW was evaluated in terms of improvement in surface wettability, quantified via Contact Angle (CA) measurements. Mix of typical industrial plasma gases (Ar, H2 and O2) were assessed. Constant flow pattern was observed to significantly improve surface wettability and uniformity compared to its pulsed counterpart; and also affect the effect of other factors on the over-all cleaning performance of B-MW. Proceeding with constant flow pattern, surface wetting was found to improve with increasing power and cleaning time. The combination of O2 and H2 plasma was found to be more effective compared to utilizing them separately. Both cleaning time and flow rate increased the amount of reactive species that come in contact with the contaminants. With optimized parameters, B-MW was confirmed to be a more effective plasma method than S-RF i.e. 12% more effective in removing contamination and improving surface wettability, up to 20% better uniformity and can boost throughput to at least 34%.

Remote Plasma Cleaning and Ion-Induced Hydrogen Desorption from the Silicon (100) Surface and Its Applications to Si Epitaxy

1992 ◽  
Vol 279 ◽  
Author(s):  
David S. Kinosky ◽  
R. Qian ◽  
A. Mahajan ◽  
S. Thomas ◽  
J. Fretwell ◽  
...  
Keyword(s):  
Langmuir Probe ◽  
Hydrogen Desorption ◽  
Rf Plasma ◽  
Plasma Cleaning ◽  
Plasma Power ◽  
Remote Plasma ◽  
Pressure Plasma ◽  
Probe Analysis ◽  
Effective Removal ◽  
Si Epitaxy

ABSTRACTWe have studied the conditions for effective removal of H from the silicon (100) surface by Ar and He plasma bombardment as a function of pressure, plasma power and time. At a given pressure, a range of rf plasma powers exists for effective H-desorption. For example, at 250°C and for 100 mTorr of He, H is desorbed only between 12 and 50W of plasma power. The range of effective powers was found to become narrower with increasing pressure. We have also found the efficacy of the H-plasma clean to be reduced by addition of He and Ar. Substrate damage results from Ar addition and from increased plasma power for pure H. The results are discussed along with Langmuir probe analysis of the various plasma conditions.

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