Room-Temperature Ferroelectricity in Group-IV Metal Chalcogenide Nanowires

2019 ◽  
Vol 141 (38) ◽  
pp. 15040-15045 ◽  
Author(s):  
Jun-Jie Zhang ◽  
Jie Guan ◽  
Shuai Dong ◽  
Boris I. Yakobson
Keyword(s):  
Room Temperature ◽  
Group Iv ◽  
Metal Chalcogenide

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

Free-standing electrochemically coated MoSx based 3D-printed nanocarbon electrode for solid-state supercapacitor application

Nanoscale ◽  
2021 ◽  
Author(s):  
Kalyan Ghosh ◽  
Martin Pumera
Keyword(s):  
Solid State ◽  
Transition Metal ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Free Standing ◽  
Metal Chalcogenide ◽  
Supercapacitor Application ◽  
3D Printed

Room temperature electrochemical deposition of transition metal chalcogenide (MoSx) on 3D-printed nanocarbon fibers based electrodes for custom shaped solid-state supercapacitor.

Room temperature p-orbital magnetism in carbon chains and the role of group IV, V, VI, and VII dopants

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11186-11195 ◽  
Author(s):  
C. H. Wong ◽  
E. A. Buntov ◽  
A. F. Zatsepin ◽  
J. Lyu ◽  
R. Lortz ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metals ◽  
Room Temperature ◽  
Group Iv ◽  
Rare Earth Ions ◽  
Next Generation ◽  
Spintronic Devices ◽  
Carbon Chains ◽  
Orbital Magnetism

The study of magnetism without the involvement of transition metals or rare earth ions is considered the key to the fabrication of next-generation spintronic devices.

scholarly journals The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 1006
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Single Mode ◽  
Group Iv ◽  
Light Power ◽  
Fully Integrated ◽  
Electronic And Optical Properties ◽  
Novel Approach

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.

Initial Stages of Interface Formation in the Si/Sn System

1986 ◽  
Vol 77 ◽  
Author(s):  
M. Zinke-Allmang ◽  
H.-J. Gossmann ◽  
L. C. Feldman ◽  
G. J. Fisanick
Keyword(s):  
Room Temperature ◽  
Group Iv ◽  
Necessary Condition ◽  
Interface Formation ◽  
Island Formation ◽  
Simple Growth ◽  
Critical Coverage

ABSTRACTGroup IV-IV heterostructures with Sn as one constituent have potentially important applications. We report on an investigation of the initial stages of interface formation for deposition of Sn on Si(100)2×1 and Si(111)7×7. We find that simple growth occurs up to a critical coverage θc. (α1.25×1015 cm-2), independent of temperature. Beyond θc. growth continues to be laminar for deposition at 150 K only, while island formation is observed at temperatures at and above room temperature. The Si(111)7×7 reconstruction seems unperturbed by Sn deposition at room temperature while the Si(100)2×1 begins to order. However, the reordering, a necessary condition for perfect growth, is incomplete.

Supersilylverbindungen Der Borgruppenelemente, IV [1]. Supersilylelementhalogenide tBu3SIEX2 Und (tBu3Si)2Ex Mit E = Al, Ga, In: Synthesen, Eigenschaften, Strukturen [2] / Supersilylated Compounds of the Thirteenth Group, IV [I]. Supersilylelement Halides tBu3SIEX2 And (tBu3Si)2Ex with E = Al, Ga, In: Syntheses, Properties, Structures [2]

1998 ◽  
Vol 53 (3) ◽  
pp. 333-348 ◽  
Author(s):  
Nils Wiberg ◽  
Kerstin Amelunxen ◽  
Hans-Wolfram Lemer ◽  
Heinrich Nöth ◽  
Jörg Knizek ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Gas Phase ◽  
Structure Analysis ◽  
Room Temperature ◽  
Group Iv ◽  
Lewis Acidity ◽  
X Ray ◽  
Oxygen Sensitive

Abstract Water and oxygen sensitive compounds (tBu3SiEX2)2, tBu3SiEX2 Do and (tBu3Si)2EX (E = AI, Ga, In; X = (F), Cl, Br; Do = OR2, NR3) have been synthezised by reaction of EX3 with tBu3SiNa in the absence or presence of donors. In addition, (tBu3Si)AlBr2, (tBu3Si)2InF and tBu3SiInBr2 were prepared by reaction of AlBr3 with (tBu3Sij2Zn or of (tBu3Si)2In- In(Si/Bu3)2 with AgF2 and HBr, respectively. The adduct [tBu3SiAlBr2 · AlBr3 ·1/2MgBr2]2 is formed from AlBr3 and (tBu3Si)2Mg(THF)2. Thermal decomposition of the compounds in solution or in the gas phase leads to the formation of tBu3SiEX2 (from the dimers or the donor adducts) and of tBu3SiX. The Lewis acidity of tBu3SiEX2 against donors increases in the direction Do = Et2O < THF < NEtMe2. Dehalogenation of (tBu3Si)2ECl with tBu3SiNa(THF)2 in pentane at room temperature leads to clusters (tBu3Si)4Al2, (tBu3Si)3Ga2•, (tBu3Si)4In2 and (tBu3Si)3Ga2Na(THF)3, reduction of tBu3SiGaCl2 with Na or K in heptane at 100°C to the tetrahedran (tBu3Si)4Ga4. The structures of (tBu3SiGaCl2)2, (tBu3Si)2GaCl, and [tBu3SiAlBr2 AlBr3 ·1/2MgBr2]2 have been determined by X-ray structure analysis.

Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

2012 ◽  
Vol 47 (6) ◽  
pp. 1289-1294 ◽  
Author(s):  
K.G. Sanjaya Ranmohotti ◽  
M. Dariush Montasserasadi ◽  
Jonglak Choi ◽  
Yuan Yao ◽  
Debasish Mohanty ◽  
...  
Keyword(s):  
Alkali Metal ◽  
Room Temperature ◽  
Step Method ◽  
Metal Chalcogenide ◽  
Layered Perovskites

Spray-deposited metal-chalcogenide photodiodes for low cost infrared imagers

MRS Advances ◽  
2020 ◽  
Vol 5 (39) ◽  
pp. 2013-2022
Author(s):  
Tommy O. Boykin ◽  
Nagendra Dhakal ◽  
Javaneh Boroumand ◽  
F. Javier Gonzalez ◽  
Isaiah O. Oladeji ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Large Format ◽  
Metal Chalcogenide ◽  
Deposited Metal ◽  
Reduced Scale

AbstractLow-cost, light-weight, low-power, large-format, room-temperature, mid-wave infrared (MWIR) detectors are needed for reduced-scale aircraft. An opportunity, suggested by direct-read X-radiography systems, is the use of thin film transistor (TFT) array as read-out integrated circuit (ROIC) for low-cost sensors deposited directly and unpatterned onto this ROIC. TFTs have already been thoroughly optimized for power, weight, large-format, and cost by the flat-panel-display industry. We present experimental investigation of aqueous-spray-deposited, mid-wave-IR, metal-chalcogenide heterojunction CdS/PbS photodiodes for this application. Measured responsivity, detectivity D*, and photoresponse spectra are reported.

scholarly journals On-Chip Group-IV Heisenberg-Limited Sagnac Interferometric Gyroscope at Room Temperature

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3476
Author(s):  
Francesco De Leonardis ◽  
Richard Soref ◽  
Martino De Carlo ◽  
Vittorio M. N. Passaro
Keyword(s):  
Room Temperature ◽  
Single Photon ◽  
Four Wave Mixing ◽  
Group Iv ◽  
Silicon On Insulator ◽  
Wave Mixing ◽  
Entangled Photons ◽  
Beam Splitters ◽  
Two Photon ◽  
On Chip

A room-temperature strip-guided “manufacturable” Silicon-on-Insulator (SOI)/GeSn integrated-photonics quantum-gyroscope chip operating at 1550 nm is proposed and analysed. We demonstrate how the entangled photons generated in Si Spontaneous Four Wave Mixing (SFWM) can be used to improve the resolution of a Sagnac interferometric gyroscope. We propose different integrated architectures based on degenerate and non-degenerate SFWM. The chip comprises several beam splitters, two SFWM entangled photon sources, a pump filter, integrated Mach–Zehnder interferometric gyro, and an array of waveguide coupled GeSn/Ge/Si single-photon avalanche detectors. The laser pumped SWFM sources generate the signal-idler pairs, which, in turn, are used to measure the two-photon, four-photon, and higher order coincidences, resulting in an increasing of the gyro resolution by a factor of two and four, with respect to the classical approach.

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