Temperature-Dependent Electroluminescence from CdTe/CdS Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
K. J. Price ◽  
A. Vasko ◽  
L. Gorrelland ◽  
A. D. Compaan
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Cell Efficiency ◽  
Forward Current ◽  
Current Voltage ◽  
Power Law Function ◽  
Current Densities ◽  
Increasing Temperature ◽  
Hole Recombination

AbstractElectroluminescence (EL) from polycrystalline CdTe/CdS solar cells was studied over the temperature range – 30 C to 25 C. We are able to observe above-background EL at forward current densities as low as 3 mA/cm2, allowing us to explore the EL behavior at current-voltage regimes within the normal operating parameters of the device. The EL spectrum is very similar to the photoluminescence (PL) spectrum, and is independent of applied voltage. We show that the EL most likely originates from injected electron-hole recombination at the CdTe/CdS junction. The total EL intensity is found to vary as a power-law function of current, EL ∼ Ib, where I is the forward current density and b is a constant. The value of b varies from sample to sample and decreases with increasing temperature. EL intensity typically is much more sensitive to device deterioration with light soak stress than is cell efficiency.

scholarly journals CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR CELLS p-n JUNCTION ZnO AND TiO2 PARAREL ON Cu2O LAYER

2020 ◽  
Vol 12 (1) ◽  
pp. 1
Author(s):  
Teuku Andi Fadlly ◽  
Rachmad Almi Putra
Keyword(s):  
Solar Cells ◽  
Thermal Oxidation ◽  
Solar Irradiation ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Impurity Layer ◽  
Current Voltage ◽  
Type Semiconductor ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

Current-Voltage Characteristics of solar cells p-n junction ZnO and TiO<sub>2</sub> parallel in the Cu<sub>2</sub>O layer has been determined using solar irradiation. Metal oxide has been used as a semiconductor material, such as ZnO and TiO<sub>2</sub> is an n-type semiconductor. The material has a gap energy of 3.37 eV and 3.2 eV. Thermal oxidation is applied to commercial Cu plates for 60 minutes to produce Cu<sub>2</sub>O layers as p-type semiconductors. The process varies in temperature, namely 300, 400, and 500 °C. The process of thermal oxidation on Cu plates at a temperature of 300 °C increases the impurity in the Cu<sub>2</sub>O layer. The impurity layer is CuO. Then the CuO layer formed decreases with increasing temperature thermal oxidation. CuO layer increases the efficiency of solar cells p-n junction TiO<sub>2</sub>-ZnO parallel in the layer Cu<sub>2</sub>O. The results of measurements with sunlight showed that the TiO<sub>2</sub>-ZnO/Cu<sub>2</sub>O (300) samples had the highest solar cell efficiency, which was 0.28 %.

Characteristics of Perovskite Solar Cells with Methylammonium Iodide-Added Anti-Solvent

2021 ◽  
Vol 21 (8) ◽  
pp. 4367-4371
Author(s):  
Sung Hwan Joo ◽  
Il Tae Kim ◽  
Hyung Wook Choi
Keyword(s):  
Solar Cell ◽  
Perovskite Solar Cells ◽  
Lead Iodide ◽  
Step Method ◽  
Electron Hole ◽  
Perovskite Layer ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
One Step ◽  
Hole Recombination

The perovskite film—manufactured via a one-step method—was superficially improved through an anti-solvent process to increase solar cell efficiency. Although perovskite synthesis proceeds rapidly, a significant amount of lead iodide residue remains. Well-placed lead iodide in perovskite grains prevents electron–hole recombination; however, when irregularly placed, it interferes with the movement of electron and holes. In this study, we focused on improving the crystallinity of the perovskite layer, as well as reducing lead iodide residues by adding a methylammonium halide material to the anti-solvent. Methylammonium iodide in chlorobenzene used as an anti-solvent reduces lead iodide residues and improves the crystallinity of formamidinium lead iodide perovskite. The improved crystallinity of the perovskite layer increased the absorbance and, with reduced lead iodide residues, increased the efficiency of the perovskite solar cell by 1.914%.

Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

2005 ◽  
Vol 872 ◽  
Author(s):  
K. Gopalakrishna Naik ◽  
K.S.R.K. Rao ◽  
T. Srinivasan ◽  
R. Muralidharan ◽  
S. K. Mehta
Keyword(s):  
Excitation Power ◽  
Anomalous Behavior ◽  
Electron Hole ◽  
Edge Singularity ◽  
Fermi Edge ◽  
Fermi Edge Singularity ◽  
Pl Intensity ◽  
Dimensional Electron Gas ◽  
Increasing Temperature ◽  
Hole Recombination

AbstractThe temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E11and E21considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5 -10 meV below the E21transition. At 4.2 K, FES appears as a lower energy shoulder to the E21transition. The PL intensity of all the three transitions E11, FES and E21grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E11and E21decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

scholarly journals Lone-pair effect on carrier capture in Cu2ZnSnS4solar cells

2019 ◽  
Vol 7 (6) ◽  
pp. 2686-2693 ◽  
Author(s):  
Sunghyun Kim ◽  
Ji-Sang Park ◽  
Samantha N. Hood ◽  
Aron Walsh
Keyword(s):  
Solar Cells ◽  
Fast Electron ◽  
Lone Electron Pair ◽  
Electron Pair ◽  
Lone Pair ◽  
Electron Hole ◽  
Carrier Capture ◽  
Hole Recombination

Fast electron–hole recombination in kesterite solar cells is linked to the chemistry of the Sn lone electron pair.

Ultra-Fast NiSi2 Formation in p+-Si by High Current Densities

1998 ◽  
Vol 527 ◽  
Author(s):  
J.S. Huang ◽  
K.N. Tu
Keyword(s):  
Room Temperature ◽  
Line Length ◽  
Line Formation ◽  
High Current ◽  
Subsequent Growth ◽  
Applied Current ◽  
Electron Hole ◽  
Current Densities ◽  
Heavily Doped ◽  
Hole Recombination

ABSTRACTAn ultra-fast lateral formation of epitaxial NiSi2 line in heavily doped p+-Si diffused tub was created at room temperature ambient under the application of current densities of 106 A/cm2. A NiSi2 line of 140 μm long and I μm wide linking the cathode and anode contacts to p+-Si was formed within 1 second. Shorter lines were formed with lower current densities. The formation of shorter lines was again completed within 1 second and there was very little subsequent growth upon further stressing. The line length strongly depends upon applied current which tend to suggest that the line formation is limited by driving force rather than by kinetics. We propose that the ultra-fast silicide formation is a result of Ni interstitial diffusion in Si induced by electron-hole recombination heating and electromigration.

Forward current-voltage characteristics of gallium arsenide power diodes at high current densities

1988 ◽  
Vol 31 (6) ◽  
pp. 1101-1104 ◽  
Author(s):  
L.A. Delimova ◽  
Yu.V. Zhilyaev ◽  
V.Yu. Kachorovsky ◽  
M.E. Levinshtein ◽  
V.V. Rossin
Keyword(s):  
Gallium Arsenide ◽  
High Current ◽  
Power Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Efficiency Improvement in Co-sensitized DSSCs Through a Cascade Band Alignment of N-719 and Rose Bengal Dyes on Nanostructured ZnO Photoanodes

MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 767-775
Author(s):  
M.A. Borysiewicz ◽  
S. Chusnutdinow ◽  
M. Wzorek ◽  
T. Wojciechowski
Keyword(s):  
Rose Bengal ◽  
Open Circuit Voltage ◽  
Electrochemical Impedance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Band Alignment ◽  
Electron Hole ◽  
Cell Efficiency ◽  
Hole Recombination

ABSTRACTWe show that by subsequent sensitization of nanostructured ZnO photoanodes with N-719 and Rose Bengal dyes an improvement or worsening of the cell efficiency may be obtained, relating to photoanodes sensitized with N-719 dye only (JSC = 2.97 mA/cm2, VOC = 0.68 V, η = 0.99%) depending on the order in which the dyes are applied. We observe that for the case when the N-719 dye is followed by Rose Bengal an increase in efficiency, short circuit current and open circuit voltage is observed (JSC = 3.95 mA/cm2, VOC = 0.71 V, η = 1.26%), which we relate to the cascade band alignment of the ZnO and the dyes. In the case when Rose Bengal is first on ZnO followed by N-719, a lowering of all parameters is observed (JSC = 2.86 mA/cm2, VOC = 0.64 V, η = 0.94%) due to the trap band alignment. Electrochemical impedance spectroscopy measurements and modelling confirmed this theory showing longer electron lifetimes in the photoanode for the cascade band alignment, enhancing electron-hole separation, than for the trap alignment, facilitating electron-hole recombination.

scholarly journals Improvement of Dye Solar Cell Efficiency by Photoanode Posttreatment

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Tanja Ivanovska ◽  
Zoran Saponjic ◽  
Marija Radoicic ◽  
Luca Ortolani ◽  
Vittorio Morandi ◽  
...  
Keyword(s):  
Dye Sensitized Solar Cells ◽  
Trap States ◽  
Electron Recombination ◽  
Electron Hole ◽  
Surface Trap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
Hole Recombination

The basic concept for efficiency improvement in dye-sensitized solar cells (DSSC) is limiting the electron-hole recombination. One way to approach the problem is to improve the photogenerated charge carriers lifetime and consequently reduce their recombination probability. We are reporting on a facile posttreatment of the mesoporous photoanode by using a colloidal solution of TiO2nanoparticles. We have investigated the outcome of the different sintering temperature of the posttreated photoanodes on their morphology as well as on the conversion efficiency of the DSSC. The DSSCs composed of posttreated photoanodes at 450°C showed an increase inJSCand consequently an increase in efficiency of 10%. Investigations were made to determine the electron recombination via the electrolyte by the OCVD technique. We found that the posttreatment has the effect of reducing the surface trap states and thus increases the electron lifetime, which is responsible for the increase of the overall cell efficiency.

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